• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Polymer(Korea)
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• v.28 no.4
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• pp.298-304
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• 2004

We fabricated a polymer dispersed liquid crystal (PDLC) cell using LC with negative dielectric anisotropy and UV curable monomer exhibiting transparent state initially (called normally transparent (NT)) and studied the electro-optic characteristics. The NT PDLC cell made with the ratio of LC : monomer = 70/30 wt%, curing temperature of 20 $^{\circ}C$ and strong UV intensity of 198 ㎽/$\textrm{cm}^2$ had high contrast ratio and showed good electro-optic characteristics. In this condition, LC is aligned vertically on the substrate due to the vertical alignment layer and the polymer made with the UV exposure does not influence the alignment of the LC much. Therefore, the transmittance at the zero voltage is very high and the scattering state of the cell is good after applying the voltage because LC with negative dielectric anisotropy tries to align perpendicular to the field. And also, the NT PDLC cell showed better viewing angle characteristics than that in the normally scattering (NS) PDLC.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.521-528
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• 2008

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-$SiO_x$) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-$SiO_x$ decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between $150^{\circ}\;and\;200^{\circ}$. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-$SiO_x$ thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-$SiO_x$ showed homogeneous alignment; however, in the lower case (x < 1.6), liquid crystals showed homeotropic alignment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.58-65
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• 2022

The field of liquid crystal display (LCD) is constantly in the spotlight and the process of depositing an alignment layer in the LCD manufacturing process is very important to obtain excellent performance such as low-power driving and high-speed response to improve LCD performance. Therefore, research on liquid crystal (LC) alignment is being actively conducted. When manufacturing LCD, it is necessary to consider the effect of the alignment layer thickness as one of the factors affecting various LCD performances. In addition, previous studies confirmed the LC alignment characteristics correlate with the rotation speed in the spin coating process. Therefore, the electro-optical properties of the LCD were investigated by manufacturing a polyimide alignment layer by varying the rotation speed in the spin coating process in this study. It was confirmed that the thickness of the polyimide alignment layer was controlled according to the spin coating conditions. The average transmittances of anti-parallel LC cells at the spin coating speed of 2,500 rpm and 3,000 rpm are about 60%, which indicates that the LC cell has relatively higher performance. At the spin coating speed of 3,000 rpm, the voltage-transmittance curve of twisted nematic (TN) LC cell was below 1.5 V, which means that the TN LC cell operated at a low power. In addition, high-speed operating characteristics were confirmed with a response time of less than 30 ms. From these derived data, we confirmed that the ideal spin coating speed is 3,000 rpm. And these results provide an optimized polyimide alignment layer process when considering enhanced future LCD manufacturing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.254-261
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• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• Polymer(Korea)
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• v.36 no.6
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• pp.776-788
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• 2012

Octa[8-{4-(4'-cyanophenylazo)phenoxy}]octyl and octa[8-{4-(4'-cyanophenylazo)phenoxycarbonyl}]heptanoated disaccharide derivatives were synthesized by reacting cellobiose, maltose, and lactose with 1-{4-(4'-cyanophenylazo) phenoxy}octylbromide or 1-{4-(4'-cyanophenylazo)phenoxycarbonyl}]heptanoyl chloride, and their thermotropic liquid crystalline and photochemical phase transition behavior were investigated. All the {(cyanophenylazo)phenoxy} octyl disaccharide ethers (CADETs) formed monotropic nematic (N) phases, whereas all the {(cyanophenylazo) phenoxycarbonyl}heptanoated disaccharide esters (CADESs) exhibited enantiotropic N phases. Compared with CADETs, CADESs showed higher isotropic (I)-to-N phase transition temperatures. Photoirradiation of the disaccharide derivatives in a glass cell or in a cell with a rubbed polyimide (PI) alignment layer at a N phase resulted in disappearance of the N phase due to trans-cis photoisomerization of azobenzene, and the initial N phase was recovered when the irradiated sample was kept in the dark because of cis-trans thermal isomerization and reorientation of trans-azobenzenes. The rates of the photochemical N-I and the thermal I-N phase transition of disaccharide derivatives in a cell with a rubbed PI alignment layer were faster than those in a glass cell, and were significantly different from those observed for the monomesogenic compounds containing cyanoazobenzene and the 4-{4'-(cyanophenylazo)phenoxy}octyl glucose and cellulose ethers. The results were discussed in terms of difference in cooperative motion of azobenzene groups due to the flexibility of the main chain, the number of mesogenic units per repeating units, and the distance between the azobenzene groups.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.56-62
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• 2003

Epitaxial $Bi_4Ti_3O_{12}$ films on $SrTiO_3$(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min In air and annealed at $750^{\circ}C$ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction $\theta$-2$\theta$ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and $SrTiO_3$(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.56-60
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• 2000

Cube texture를 갖는 Ni기판위에 MOCVD(Metal Chemical Vapor Deposition)를 이용하여 NiO, CeO$_2$, YBCO 박막을 제조하였다. NiO(200)와 CeO$_2$(200) buffer layer는 450${\sim}$470$^{\circ}$C에서 10분간 MOCVD방법으로 (100)<001>Ni 기판위에 직접 증착하였다. 제조된 NiO, CeO$_2$ buffer layer는 조직이 치밀하며 표면의 상태가 매우 좋으며 Ni기판 위에 epitaxial하게 성장하였다. NiO는 Ni기판과 NiO<100>//Ni<100>의 방위관계를 가지고 성장하였으며, CeO$_2$는 증착조건에 따라 CeO$_2$ <100>//Ni<100> 및 CeO$_2$ <110>//Ni<100> 의 방위관계를 가지고 성장하였다. 증착된 NiO막과 CeO$_2$막에서 균열은 발생하지 않았다. MOCVD법으로 표면에 biaxial texture를 갖는 ceramic buffer를 증착시킨 NiO/Ni및 CeO$_2$/Ni 기판위에 YBCO박막을 MOCVD법으로 제조하였다. YBCO막은 기판온도 800$^{\circ}$C,증착압력 10torr, 산소분압을 0.7torr로 하여 10분간 행하였다. 공급원료의 조성에 따라 YBCO의 막의 texture와 형성되는 상이 변화되었다. NiO/Ni및 CeO$_2$/Ni 기판 위에 증착된 YBCO막은 c축 배향성을 가지고 성장하였으며, -scan 및 ${\varphi}$ -scan으로 측정한 (500)면의 in-plane과 (110)면의 out-of-plane의 FWHM(Full Width Half Maximum)값은 각각 10$^{\circ}$ 미만으로 우수하였다.

• Journal of Advanced Marine Engineering and Technology
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• v.20 no.5
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• pp.103-113
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• 1996

The properties of the deposited film depend on the deposition condition and these, in turn depend critically on the morphology and crystal orientation of the films. Therefore, it is important to clarify the nucleation occurrence and growth stage of the morphology and orientation of the film affected by deposition parameters, e.g. the gas pressure and bias voltage etc. In this work, magnesium thin flims were prepared on cold-rolled steel substrates by a thermo-eletron activation ion plating technique. The influence of nitrogen gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. The diffraction peaks of magnesium film became less sharp and broadened with the increase of nitrogen gas pressure. With an increase in nitrogen gas pressure, flim morphology changed from colum nar to granular structure, and surface crystal grain-size decreased. The morphology of films depended not only on gas pressure but also on bias voltage, i.e., the effect of increasing bias voltage was similar to that of decreasing gas pressure. The effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. Magnesium, in general, has not a good corrosion resistance in all environments. However, these magnesium films prepared by changing nitrogen gas pressure showed good corrosion resistance. Among the films, magnesium films which exhibited granular structure had the highest corrosion resistance. The above phenomena can be explained by applying the effects of adsorption, occlusion and ion sputter of nitrogen gas.