• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.87-91
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• 2021

Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.17-21
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• 2022

In the case of the manufacturing industry that produces high-tech components such as semiconductors and large flat panel displays, the manufacturing space is made into a cleanroom to increase product yield and reliability, and various environmental factors have been managed to maintain the environment. Among them, airborne particle is a representative management item enough to be the standard for actual cleanroom grade, and a sequential particle monitoring system is usually used as one parts of the FMS (Fab or Facility monitoring system). However, this method has a problem in that the measurement efficiency decreases as the length of the sampling tube increases. In this study, in order to solve this problem, a multiple regression model was created. This model can correct the measurement error due to the decrease in efficiency by sampling tube length.

• 한국진공학회지
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• 제17권4호
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• pp.278-291
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• 2008

반도체 소자 제조 공정을 진행하기 위해서는 수많은 진공 시스템이 사용되어야 하고 이로 인하여 많은 소비전력을 필요로 한다. 소비전력 문제는 환경 문제와도 연관되기 때문에 반도체 소자 제조업체들 입장에서는 깊은 관심을 가지고 해결해야 할 사항으로 여러 가지 방안들이 제안되고 있다. 진공 펌프 제조업체들 입장에서는 진공 펌프의 설계/제작에 있어 소비 전력절감을 감안하게 되지만, 반도체 팹(fab)내부에서 소비 전력을 줄이기 위해서는 진공 펌프를 사용하는 사용자의 사용 방법 및 환경도 매우 중요하다. 본 연구에서는 반도체 소자 제조 공정에 사용되는 진공 펌프의 소비 전력을 줄이는 여러 가지 방법들에 대해 간략하게 설명하고 반도체 산업의 기술 발전 방향이 진공 펌프 소비 전력에 미치는 영향을 살펴보고자 한다.

• 대한산업공학회지
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• 제41권3호
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• pp.275-286
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• 2015

In this paper, we propose a practical method for setting up a daily production plan which can operate semiconductor fabrication factories more stably and linearly by determining work in process (WIP) targets and movement targets. We first adjust cycle times of the operations to satisfy the monthly production plan. Second, work in process (WIP) targets are determined to control the production progress of operations: earliness and tardiness. Third, movement targets are determined to reduce cumulated differences between WIP targets and actual WIPs. Finally, the determined movement targets are modified through a simulation model which considers capacities of the equipments and allocations of the WIPs in the fab. The proposed daily production planning method can be easily adapted to the memory semiconductor fabs because the method is very simple and has straightforward logics. Although the proposed method is simple and straightforward, the power of the method is very strong. Results from the shop floor in past few periods showed that the proposed methodology gives a good performance with respect to the productivity, workload balance, and machine utilization. We can expect that the proposed daily production planning method will be used as a useful tool for operating semiconductor fabrication factories more efficiently and effectively.

• 한국산업보건학회지
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• 제26권1호
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• pp.1-10
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• 2016

Objectives: The aim of this study is to review the results of exposure to chemicals and to extremely low frequency(ELF) magnetic fields generated in wafer fabrication operations in the semiconductor industry. Methods: Exposure assessment studies of silicon wafer fab operations in the semiconductor industry were collected through an extensive literature review of articles reported until the end of 2015. The key words used in the literature search were "semiconductor industry", "wafer fab", "silicon wafer", and "clean room," both singly and in combination. Literature reporting on airborne chemicals and extremely low frequency(ELF) magnetic fields were collected and reviewed. Results and Conclusions: Major airborne hazardous agents assessed were several organic solvents and ethylene glycol ethers from Photolithography, arsenic from ion implantation and extremely low frequency magnetic fields from the overall fabrication processes. Most exposures to chemicals reported were found to be far below permissible exposure limits(PEL) (10% < PEL). Most of these results were from operators who handled processes in a well-controlled environment. In conclusion, we found a lack of results on exposure to hazardous agents, including chemicals and radiation, which are insufficient for use in the estimation of past exposure. The results we reviewed should be applied with great caution to associate chronic health effects.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.668-670
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• 2011

차세대 IT 기술은 단일기술에 그치지 않고 융,복합적인 특성을 가지는 기술로 발전하고 있다. 정부는 시스템반도체 설계 분야에서 경쟁력 확보를 위한 5가지 핵심기술을 스마트 자동차 인포테인먼트 플랫폼, 스마트TV 멀티미디어 시스템, 스마트폰 아날로그 및 인터페이스 기술, 스마트 컨버전스 디지털 통신 및 RF 기술, 스마트제품용 고급 전력 관리 기술로 분류하고 이를 응용할 주력산업으로 스마트폰, 스마트TV, 스마트자동차, 스마트패드 등으로 지정하였다. 이러한 핵심요소기술들은 차세대 스마트제품의 경쟁력 확보에 필요한 반도체 설계의 핵심기술이 되며, 이는 팹리스 등의 기업으로 기술이전이 가능하다. 본 고에서는 그 중 스마트폰 시스템반도체를 위한 아날로그 및 인터페이스 기술이 현재 어느 위치에 와 있는지 파악하고, 기술 현황과 문제점에 대하여 분석한다.

• 한국가스학회지
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• 제24권2호
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• pp.15-21
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• 2020

현재 KS C IEC 60079-10-1 등에서 2차 누출 시 누출 구멍의 반경(hole radius)은 권고로 하여 표현되어 있다. 누출 구멍 크기의 과소평가는 누출률에 대한 계산 값의 과소평가로 이어질 수 있고, 안전상의 이유로 검토되는 누출 구멍 크기의 보수적인 계산은 과대평가로 이루어 질 수 있어 과대한 위험장소 범위로 나타낼 수 있기 때문에 이 또한 피해야 한다. 그러므로 누출 구멍의 크기를 추정할 때에는 신중하게 균형 잡힌 접근이 필요하다. 이러한 논리를 바탕으로 하여 금번 연구에서는 반도체 산업에서 적용되는 국제안전규격인 SEMI S6 기준에 따른 실험결과로 위험물질 누출 시 가스박스 내부 농도를 파악하여 안정성을 검토해보고 SEMI F15 누출률 기준, SEMI S6 누출률 기준에 따라 KS C IEC 60079-10-1의 공식을 적용하여 폭발위험장소의 범위 선정을 실시하였다. 이를 바탕으로 하여 향후 반도체 산업 등 폭발위험장소의 적용이 까다로운 FAB 설비의 대안으로 배기성능 향상이 필요한지 여부를 검토해보고자 한다.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.98-102
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• 2021

GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga₂O₃ at 500℃ annealing. As the annealing temperatures increase the α-Ga₂O₃ is in part turned into β-Ga₂O₃ and fully turned into β-Ga₂O₃ after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga₂O₃ and β-Ga₂O₃ become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.1-5
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• 2023

Most of the production process is performed in a cleanroom in the case of facilities that produce semiconductor chips or display panels. Therefore, environmental management of cleanrooms is very important for product yield and quality control. Among them, airborne particles are a representative management item enough to be the standard for the actual cleanroom rating, and it is a part of the Fab or Facility monitoring system, and the sequential particle monitoring system is mainly used. However, this method has a problem in that measurement efficiency decreases as the length of the sampling tube increases. In addition, a statistically significant test of deterioration in efficiency has rarely been performed. Therefore, in this study, the statistically significant test between the number of particles measured by InSitu and the number of particles measured for each sampling tube ends(Remote). Through this, the efficiency degradation problem of the sequential particle monitoring system was confirmed by a statistical method.