• 제목/요약/키워드: 반도체 웨이퍼 후면 연삭

검색결과 2건 처리시간 0.022초

반도체 실리콘재료의 정밀연삭을 위한 공정변수와 연삭후 표면에 형성된 wheel pattern과의 관계 (Surface Wheel Pattern Analysis and Grinding Process Parameters of Silicon)

  • 오한석;박성은;이홍림
    • 한국정밀공학회지
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    • 제19권2호
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    • pp.187-194
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    • 2002
  • For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.