• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.3
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• pp.45-50
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• 2005

A UV camera is being used in various application regions such as industry, medical science, military, and environment monitoring. A ROIC(ReadOut IC) is developed and can read the responses from UV photodiode sensors which are made with III-V nitride semiconductors of GaN series haying high resolution and high efficiency. To design FPA(Focal Plane Array) UV $8{\times}8$ ROIC, the photodiode type sensor devices are modeled as the capacitor type ones. The ROIC reads out signals from the detector at)d outputs sequentially pixel signals after amplifying and noise filtering of them. The ROIC is fabricated using the $0.5{\mu}m$ 2Poly 3Metal N-well CMOS process. And then, it and photodiode array are hybrid bonded by gold stud bumping process using ACP(Anisotropic Conductive Paste). After the packaging, UV images appearing on PC verified the operations of the ROIC.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.

• Fire Science and Engineering
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• v.20 no.1 s.61
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• pp.71-76
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• 2006

The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The occurrence factor of the fire is electric arc or spark accompanied with electrical faults. Residual Current Protective Device(RCD) of high sensitivity type used at low voltage wiring cuts off earth leakage and overload, but the RCD can't cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied low voltage distribution panel are prescribed to rated breaking time about 30[ms](KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To be improved on such problem, this paper is proposed to a auxiliary control apparatus for RCD trip on electric arc or spark due to electrical fire. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.31-35
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• 2006

This paper is studied on a protective control system for electrical fire used electrical characteristics of SCR and multilayer-type PTC thermistor. The PTC thermistor has characteristic or positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_{3_}$Ceramics of positive temperature coefficient. Also PTC shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used multilayer-type PTC which is protected from electrical fire due to electric short circuit faults or overload faults. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.2
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• pp.38-45
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• 1997

In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed a three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. To investigate the behavior of thermal oxidation the simulations of thermal oxidation for island and hole structures are carried out assuming silicon wafer of <100> direction, temperature of $1000^{\circ}C$, oxidation time of 60min, wet ambient, initial oxide thickness of $300\AA$, and nitride thickness of $2, 000\AA$. The main effect of deformation at the corner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stressin theoxide. In the island structure which is the structure mostly covered with nitride and a coner is opended to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opedned to oxide and a coner is convered with nitride, however, oxidation is increased at the coner by tensile stress.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.20-25
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• 2010

An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.101-107
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• 1995

To investigate the diffraction property of the Bessel beam for defocus which acts CFAP (Combined Filter of Amplitude and Phase), we calculated numerically the intensity, the radius of central spot, and the optical transfer function for the number of node of the Bessel beam when an optical system has an aberration-free or a spherical aberration. The Bessel beam has larger the maximum intensity and the OTF value for an optical system with a spherical aberration than that with an aberrationfree. Particularly, the OTF value at the point of maximum intensity for $W_{40}=3\lambda$is higher for the Bessel beam than for the Clear aperture. From these results, we know that the Bessel beam has the compensating effect. The Bessel beam also has the radius of central spot having a superresolution. We will useful for the fabrication of semiconductor device and the optical recording system using these effects.ffects.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.75-82
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• 2017

We present a new type of receiver-transmitter optical system that can be adapted to the sensor head of a displacement-measuring interferometer. The interferometer is utilized to control positioning error and repetition accuracy of a wafer, down to the order of 1 nm, in a semiconductor manufacturing process. Currently, according to the tendency of scale-up of wafers, an interferometer is demanded to measure a wider range of displacement. To solve this technical problem, we suggest a new type of receiver-transmitter optical system consisting of a GRIN lens-Collimating lens-Afocal lens system, compared to conventional receiver-transmitter using a single collimating lens. By adapting this new technological optical structure, we can improve coupling efficiency up to about 100 times that of a single conventional collimating lens.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.99-103
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• 2009

HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).