• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.