• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.04a
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• pp.83-88
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• 2001

In order to suggest the proper optimal conditions of the CNC milling machining for the Thin-wall surface, some experiments were carried out. The process was applied in the aerospace industry for the machining of light alloys, notably aluminium. In recent year, however, the mold and die industry has begun to use the technology for the production of components, including those manufactured from hardened tool steels. And the end mill is an important tool in the milling process. A typical example for the end mill is the milling of pocket and slot in which a lot of material is removed from the workpiece. Therefore the proper selection of cutting parameter for end milling is one of the important factors affecting the cutting cost. In this paper, we choose the optimal parameters(cutting forces) to cut thin-walled Al part by experiment.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.343-348
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• 2000

The term‘High Speed Machining’has been used for many years to describe end milling with small diameter tools at high rotational speeds. typically 10,000 - 100,000 rpm. The process was applied in the aerospace industry for the machining of light alloys, notably aluminium. In recent years, however, the mold and die industry has begun to use the technology for the production of components, including those manufactured from hardened tool steels. And the end-mill is an important tool in the milling process. A typical examples for the end mill is the milling of pocket and slot in which a lot of material is removed from the workpiece. Therefore the proper selection of cutting parameters for end milling is one of the important factors affecting the cutting cost. The one of the advantages of HSM is cutting thin-wall part of light alloy like Al (thinkness about 0.3mm). In this paper, firstly, we study characteristics of HSM, and then, we choose the optimal parameters(cutting forces) and investigate various machining strategies to cut thin-wall part by experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.140-141
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• 2007

반도체 소자의 공정에 있어서 device scaling으로 인한 고유전 게이트 산화막 (high-k dielectics thin film)의 공정 개발 확보 방안이 필요하다. 본 논문에서는 유도결합 플라즈마를 이용하여 고유전율 박막을 식각하였다. CF4, SF6 등의 가스에서 금속-F, 금속-S 결합의 낮은 휘발성으로 인하여 시료 표면에 잔류하여 낮은 식각률을 보이며 측벽 잔류물을 형성하였으며, HBr, Cl 기반 플라즈마에서 금속-Br, 금속-Cl 결합은 시료 표면으로부터 탈착이 용이하여 효과적인 식각이 이루어짐을 확인할 수 있었다.

• Journal of the Korea Convergence Society
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• v.11 no.12
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• pp.97-103
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• 2020

This study sets the solar power system installed and applied to the vertical side wall among the photovoltaic systems in the building as the scope of the research. The theoretical background was considered through literature research as a research method, and the current status, trends and characteristics of solar generator design installed and applied to domestic and foreign vertical side walls were then investigated and analyzed cases. As a result, the importance and necessity of photovoltaic generators, potential for power generation and growth were identified, and positive factors and directions were found for improving aestheticity. Based on this point, we would like to propose expected effects that can be applied to photovoltaic system design installed and applied to vertical side walls in the future, and confirm the direction and significance of the improvement of aesthetic quality of the proposal for development of thin film solar cell design technology using green facade design.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.118-126
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• 1998

A study to improve filling of semiconductor contact holes by enhancement of the directionality of the source beams has been undertaken. The collimation of source beams was improved by the ionized cluster beam deposition technique with modification of the cell geometry. The collimation tested with neutral beam was excellent. But, the Cu flims were grown in a columnar mode due to the lack of surface mobilit of the impinged clusters. A shadow effect also caused cleavage and consequent discontinuity at the steos as films grow. By applying acceleration voltage, the columnar growth in a contact hole of 0.5 $\mu$m diameter and 1 $\mu$m height disappeared and considerable coverage at the side wall of the contacts as well as perfect bottom coverage were observed. These are all due to the assistants of the accelerated ionized clusters with high kinetic energy. Thus we demonstrated that the ICB deposition technique can be used to completely fill sub-half-micron contact holes with high aspect ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.90-90
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• 1998

전계 에미터 어레이(FEA)는 진공에서 전계률 인가하여 전극으로부터 전자률 방출시키는 전자원으로서, 마이크로파 소자 및 명판 디스플레이, 센서 둥에 이용된다 .. Transfer Mold 법 은 뾰족한 에미터 립과 게이트 절연막 및 게이트 전극 충올 형성한 후 유리와 같은 기판에 이전 시키는 방법으로, 이러한 방법은 Mold 형태 위에 코탱 충의 두께 조절과, 게이트와 립 높이 조절이 가능하며, 그리고 유리 기판 위에 접착하여 대면적의 평판 디스플레이를 제작 할 수 었다는 장점이 있다[1,2]. 본 연구에서는 일반적으로 사용되는 실리콘 기판올 습식 식 각하여 Mold률 제작하는 방법 대선에, 측벽 스페이스 구조률 이용한 새로운 방법의 Mold 형태률 이용하여 게이트률 가진 에마터 립올 제작하였다. 먼저 실리콘 기판 위에 산화막올 증착하고 그 위에 게이트 전극파 게이트 절연막을 LPCVD 방법으로 증착하여 구명 형태로 패터닝 한 후, BPSG(Boro Phospher Silicate Glass) 박막올 증착하여 고온에서 훌러 내려 뾰족한 형태의 주형(Mold)률 제작한 후 TiN율 증착하여 정전 접합(an여ic bon벼ng)이나 레 진(resine)둥으로 유리률 접합한 후 KOH 용액으로 실리콘 기판옵 뒷면부터 식각해 낸다. 그 다옴, 립과 게이트 위에 있는 절연막올 제거한 후 뾰족한 전계 에미터 어레이륭 제조하 였다. 자세한 제조 공정 및 제작된 에미터 립의 특성은 학회에서 발표될 예정이다.