• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.468-474
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• 2010

In this paper, a VCHO(Voltage Controlled Harmonic Oscillator) for K-band application has been designed and implemented. The proposed oscillator has a structure of two hair-pin resonators placed on input and output of active device. Using in/out common frequency tuning structure, the VCHO yields some advantages of the enhanced fundamental frequency suppression characteristic as well as the improved output power of second harmonic. According to implementation and measurement results, it was shown that a VCHO provides an output power of -2.41 dBm, a fundamental frequency suppression of -21.84 dBc, and phase noise of -101.44 dBc/Hz at 100 kHz offset. In addition, as for the bias voltage from 0 V to -10 V for the varactor diode, output frequency range of 10.58 MHz is obtained with a power variation of ${\pm}0.19\;dB$ over its frequency range.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.