• Title/Summary/Keyword: 바나듐 옥사이드

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Effect of Electrolyte Additive on the Electrochemical Characteristics of Lithium Vanadium Oxide Anode (전해질 첨가제가 리튬 바나듐 옥사이드 전극의 성능에 미치는 영향)

  • Lee, Je-Nam
    • Journal of the Korean Electrochemical Society
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    • v.21 no.3
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    • pp.55-60
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    • 2018
  • The demand for LIBs with higher energy densities has increased continuously because the emergence of wider and more challenging applications including HEV and EV has became imperative. However, in the case of anode material, graphite is insufficient to meet this need. To meet such demand, several type of negative electrode materials like silicon, tin, SiO, and transition metal oxide have been investigated for the advanced lithium secondary batteries. Recently, lithium vanadium oxide, which has a layered structure, is assumed as one of the promising anode material as alternative of graphite. This material shows a high volumetric capacity, which is 1.5 times higher than that of graphite. However, relative low electrical conductivity and particle fracture, which results in the electrolyte decomposition and loss of electric contact between electrode, induce rapid capacity decay. In this report, we investigated the effect of electrolyte additive on the electrochemical characteristics of lithium vanadium oxide.

Growth of Two-Dimensional Nanostrcutured VO2 on Graphene Nanosheets (그래핀 나노 시트 위에 2차원 나노구조를 갖는 VO2의 성장)

  • Oh, Su-Ar;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.9
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    • pp.502-507
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    • 2016
  • Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

Sol-gel growth and structural, electrical, and optical properties of vanadium-based oxide thin films (바나듐 옥사이드 박막의 성장 및 그 구조적, 전기적, 광학적 특성)

  • Park, Young-Ran;Kim, Kwang-Joo
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.534-540
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    • 2006
  • Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

A Study on the Vanadium Oxide Thin Films as Cathode for Lithium Ion Battery Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터링으로 증착된 리튬 이온 이차전지 양극용 바나듐 옥사이드 박막에 관한 연구)

  • Jang, Ki-June;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.6
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    • pp.80-85
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    • 2019
  • Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

Improvement of bolometric properties of vanadium oxide by addition of tungsten (텅스텐 첨가에 의한 적외선 소자용 바나듐 옥사이드의 특성 향상)

  • Han, Yong-Hui;Choi, In-Hun;Kim, Geun-Tae;Shin, Hyeon-Jun;Chi, En;Moon, Seong-Uk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.207-207
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    • 2003
  • Uncooled infrared(IR) detectors that use a microbolometer with a large focal-plane array(FPA) have been developed with surface micromachining technology. There are many materials for microbolometers, such as metals, vanadium oxide, semiconductors and superconductors. Among theses, vanadium oxide is a promising material for uncooled microbolometers due to it high temperature coefficient of resistance(TCR) at room temperature. It is, however, is very difficult to deposit vanadium oxide thin films having a high TCR and low resistance because of the process limits in microbolometer fabrication. In general, vanadium oxides have been applied to microbolometer in mixed phases formed by ion beam deposition methods at low temperature with TCR in the range from -1.5 to -2.0%K.

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Fabrication of $V_2O_5$ Nanowire/PVA (Polyvinyl Alcohol) Composites for the Electric Applications (전기적 응용을 위한 바나듐옥사이드 나노선/폴리비닐 알코올 복합체 제작)

  • Lee, Jae-Woo;Lee, Kang-Ho;Kim, Gyu-Tae
    • Journal of IKEEE
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    • v.13 no.2
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    • pp.216-219
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    • 2009
  • $V_2O_5$ nanowire / polyvinyl alcohol (PVA) polymer composite fibers were fabricated by a new simple method. The reaction of PVA and acetone facilitates the formation of the polymer membrane which can be used to make the fiber. Composite fiber is percolative in the conductance because of the low percolation threshold in $V_2O_5$ nanowire networks. The fiber composite can be applied to the electromagnetic shielding originating from the conductive nature.

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Rectifying diode with 1/f noise made of nanowire networks (나노선 네트워크에서의 정류다이오드 특성과 1/f 잡음 특성)

  • Kang, Byung-Hyun;Ahn, Seung-Eon;Kim, Kang-Hyun;Kim, Nam-Hee;Pieh, Sung-Hoon;Chang, Yu-Jin;Sung, Man-Young;Kim, Gyu-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.270-274
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    • 2003
  • 네트워크상태의 탄소나노튜브 나노선과 바나듐 옥사이드 나노선의 전압-전류 특성을 측정하고 옴성 전압전류특성과 함께 정류 다이오드 특성을 관측하였다 정류특성을 Schottky diode 관점에서 분석하였고 나노선을 이용한 다이오드의 이상지수가 10을 초과하는 큰 값을 가짐을 알았다. 2단자 전극상태에서 전류잡음 1/f 잡음형태가 관측되었다.

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Analysis of Increasing the Conduction of V2O5 Thin Film on SiO2 Thin Film (SiO2 절연박막에 의해서 바나듐옥사이드 박막이 전도성이 높아지는 원인분석)

  • Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.8
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    • pp.14-18
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    • 2018
  • Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.