• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.1
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• pp.9-18
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• 2021

The 5G communication system employs the millimeter wave with the extremely high frequency. Since the high frequency signal has the strong straightness, the beamforming technology based on the multiple base stations is required for services covering wide range. The beamformer needs the angle-of-arrival(AOA) information of the signal incident to the antenna, and it is generally estimated through the high resolution AOA estimation algorithm such as Multiple Signal Classification (MUSIC) or Estimation of Signal Parameters via Rotational Invariacne Technique (ESPRIT). Although various antenna array shapes can be employed for the beamformer, a single shape (square, circle, or hexagonal) is typically utilized. In this paper, we introduce a transmitting/receiving beamforming system based on the combined array antenna with square and circular shapes, which is proper to various frequency signals, and evaluate its performance. For evaluating the performance of the proposed beamforming system based on the combined array antenna, we implement the computer simulation employing various scenarios.

• Journal of the Institute of Convergence Signal Processing
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• v.23 no.2
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• pp.91-96
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• 2022

At the current camera-based technology level, sensor-based basic life pattern recognition technology has to suffer inconvenience to obtain accurate data, and commercial band products are difficult to collect accurate data, and cannot take into account the motive, cause, and psychological effect of behavior. the current situation. In this paper, radar technology for life pattern recognition is a technology that measures the distance, speed, and angle with an object by transmitting a waveform designed to detect nearby people or objects in daily life and processing the reflected received signal. It was designed to supplement issues such as privacy protection in the existing image-based service by applying it. For the implementation of the proposed system, based on TI IWR1642 chip, RF chipset control for 60GHz band millimeter wave FMCW transmission/reception, module development for distance/speed/angle detection, and technology including signal processing software were implemented. It is expected that analysis of individual life patterns will be possible by calculating self-management and behavior sequences by extracting personalized life patterns through quantitative analysis of life patterns as meta-analysis of living information in security and safe guards application.

• Journal of Advanced Navigation Technology
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• v.28 no.3
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• pp.362-368
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• 2024

In this paper, we investigated the performance of directional and omnidirectional precoding schemes when transmitting to improve downlink performance in massive MIMO. Omnidirectional precoding was used to broadcast a common signal, such as a synchronization or control signal, to all users. The main purpose of omnidirectional precoding is to design the precoding matrix so that the signal transmitted in the downlink is the same in all directions and emitted with maximum energy. We propose a flexible omnidirectional precoding method for full-dimensional massive MIMO that can set the spatial coverage range to less than 120 degrees. The constraints of omnidirectionality of all antennas, equal transmit power, and maximum transmit rate are used to design the encoding matrix of the proposed method. The performance was evaluated in terms of spatial coverage by considering changing the spatial coverage of the antenna array by changing the distance between neighboring antennas in the antenna array.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.4
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• pp.369-376
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• 2003

In this paper, Ka-Band NRD guide band pass filter with newly designed inductive post structure is proposed and analyzed with its test results. Generally, millimeter-wave filters are very sensitive in their physical dimensions, hence, it is requires extreme precisions of several micron so as to get the designed performance. In case of common NRD Guide filter with air gap coupled structure, it is fabricated with dielectric blocks coupled via air gap. In these structures, however, it was not easy to fabricate and to process of each NRD guide dielectric resonator blocks using PTFE, so it was almost impossible to assemble with several microns in precision. In this our research, however, each dielectric resonators are coupled with a pair of inductive metal post, so all resonators are located in a single NRD Guide. The dielectric parts between two pairs of posts are operated as resonators of each stage, and the positions of the post decide the couplings between resonators. The structure we suggested is suitable fur mass production, because it is very simple and easy to process. As a result of measurements, designed NRD guide inductive post filter has a superior performance. The center frequency is 39.475 GHz with 350 MHz bandwidth, insertion loss is less than 1.8 dB, and the return loss is below than -18 dB.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.13-22
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• 2022

In this paper, we propose single and array antenna with dual linear polarization characteristics for 28 GHz band. The proposed antenna is designed two microstirp feeding structure and Taconic TLY-5 substrate, which is thickness 0.5 mm, and the dielectric constant is 2.2. The size of single patch antenna is 3.4 mm×3.4 mm, and total size of single antenna is 15.11 mm×15.11 mm. Also, the size of array antenna is 3.15 mm×3.15 mm, and total size of array antenna is 21.5 mm×13.97 mm. From the fabrication and measurement results, for 1×2 array antenna, in case of vertical polarization, cross polarization ratios are obtained from 14.23 dB to 20.79 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.31 dB to 22.74 dB for input port 1. in case of vertical polarization, cross polarization ratios are obtained from 15.75 dB to 25.88 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.70 dB to 22.82 dB for input port 2.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.868-882
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• 2009

In this paper, channel model and wireless link performance analysis for the short-range wireless communication system applications in the terahertz frequency which is currently interested in many countries will be described. In order to realize high data rates above 10 Gbps, the more wide bandwidths will be required than the currently available bandwidths of millimeter-wave frequencies, therefore, the carrier frequencies will be pushed to THz range to obtain larger bandwidths. From the THz atmospheric propagation characteristics based on ITU-R P.676-7, the available bandwidths were calculated to be 68, 48 and 45 GHz at the center frequencies of 220, 300 and 350 GHz, respectively. With these larger bandwidths, it was shown from the simulation that higher data rate above 10 Gbps can be achieved using lower order modulation schemes which have spectral efficiency of below 1. The indoor propagation delay spread characteristics were analyzed using a simplified PDP model with respect to building materials. The RMS delay spread was calculated to be 9.23 ns in a room size of $6\;m(L){\times}5\;m(W){\times}2.5\;m(H)$ for the concrete plaster with TE polarization, which is a similar result of below 10 ns from the Ray-Tracing simulation in the reference paper. The indoor wireless link performance analysis results showed that receiver sensitivity was $-56{\sim}-46\;dBm$ over bandwidth of $5{\sim}50\;GHz$ and antenna gain was calculated to be $26.6{\sim}31.6\;dBi$ at link distance of 10m under the BPSK modulation scheme. The maximum achievable data rates were estimated to be 30, 16 and 12 Gbps at the carrier frequencies of 220, 300 and 350 GHz, respectively, under the A WGN and LOS conditions, where it was assumed that the output power of the transmitter is -15 dBm and link distance of 1 m with BER of $10^{-12}$. If the output power of transmitter is increased, the more higher data rate can be achieved than the above results.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.1-7
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• 2021

In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (P_in) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P_1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.