• Title/Summary/Keyword: 민경진

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A Study on the Determination of Palladium in $SnO_2$ by ICP-AES (유도결합 플라즈마 원자 방출 분광법에 의한 $SnO_2$ 중의 Palladium 정량)

  • Sun Tae Kim;Kyoung Jin Min;Young Hee Lee;Je Ahn Park;Beom Suk Choi
    • Journal of the Korean Chemical Society
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    • v.36 no.2
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    • pp.243-247
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    • 1992
  • Inductively coupled plasma-atomic emission spectrometry was applied to determine the palladium in $SnO_2$ employed for a gas sensor. Since $SnO_2$ is hardly decomposed into the solution, extensive studies were devoted to the development of decomposition methods which minimize the interference effect. The matrix effects on the background level and emission intensity of the element were studied and they were compensated by using matrix matched solution.

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Determination of urinary metabolite of IBP after oral administration and dermal application to rats (흰쥐를 이용한 IBP의 경구투여 및 피부도포 후 요중 대사물질 측정)

  • Min Kyung Jin;Cho Young Joo;Cha Chun Geun
    • Journal of Environmental Health Sciences
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    • v.28 no.1
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    • pp.67-77
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    • 2002
  • This study was aimed to determine the urinary metabolite of IBP, one of the organophosphorus pesticides, as the biomarkers of exposure. Urine samples were collected for 24 hours in metabolic cages after oral administration and dermal application of IBP to rats. Identification of the derivatized urinary metabolite was determined by GC/MS and excretion time courses of the urinary metabolite was analyzed by GC/FPD. Urinary metabolite o IBP, diisopropyl phosphorothioate, was detected in rats urine both after oral administration and dermal application of IBP. Parent compound was not detected in the experiment. In GC/MS, the mass spectral confirmation for diisopropyl phosphorothioate ion was identified at m/z 254. Diisopropyl phosphorothioate was excreted within 48 hours and 72 hours after oral administration and dermal application of IBP, respectively. In this study, the same urinary metabolite of IBP was detected both in oral and dermal exposure. Generally, excretion of the urinary metabolite after oral administration was faster than after dermal application. It is suggested that urinary diisopropyl phosphorothioate could be used as the biomarkers of exposure to IBP.

Chuna Manual Therapy Alone for Cervicogenic Dizziness: A Systematic Review (추나 단독 치료의 경추성 현훈에 대한 효과: 체계적 문헌 고찰)

  • Shin, Seon-Ho;Min, Kyung-Jin;Kim, Eui-Byeol;Ha, Won-Bae;Ko, Youn-Seok
    • Journal of Korean Medicine Rehabilitation
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    • v.29 no.1
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    • pp.1-6
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    • 2019
  • Objectives The purpose of this study is to provide an evidence base for the effectiveness of Chuna manual therapy (CMT) alone for cervicogenic dizziness. Methods We conducted a search up to October 2018 in 7 electronic databases. The randomized controlled trials (RCTs) that performed CMT for cervicogenic dizziness were included. The risk of bias was assessed using the Cochrane risk of bias tool. Results Ten RCTs met the inclusion criteria. The meta-analysis of 4 RCTs showed favorable results for the use of CMT alone compared to medication. Conclusions In 10 RCTs, we found that CMT was effective in cervicogenic dizziness. However, most of the included RCTs were unclear risk of bias. Therefore, well designed RCTs would be needed to obtain the stronger evidence level of CMT for cervicogenic dizziness.

Design and Implementation of a Six-Stage Pipeline RV32I Processor Based on RISC-V Architecture (RISC-V 아키텍처 기반 6단계 파이프라인 RV32I프로세서의 설계 및 구현)

  • Kyoungjin Min;Seojin Choi;Yubeen Hwang;Sunhee Kim
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.76-81
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    • 2024
  • UC Berkeley developed RISC-V, which is an open-source Instruction Set Architecture. This paper proposes a 32-bit 6-stage pipeline architecture based on the RV32I RSIC-V. The performance of the proposed 6-stage pipeline architecture is compared with the existing 32-bit 5-stage pipeline architecture also based on the RV32I processor ISA to determine the impact of the number of pipeline stages on performance. The RISC-V processor is designed in Verilog-HDL and implemented using Quartus Prime 20.1. To compare performance the Dhrystone benchmark is used. Subsequently, peripherals such as GPIO, TIMER, and UART are connected to verify operation through an FPGA. The maximum clock frequency for the 5-stage pipeline processor is 42.02 MHz, while for the 6-stage pipeline processor, it was 49.9MHz, representing an 18.75% increase.

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A Study on Fractal Analysis and 3D Images of Surface on BST Thin Films. (BST 박막 표면의 프랙탈 분석 및 3D 이미지 특성)

  • Hong, Kyung-Jin;Min, Yong-Ki;Cho, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.103-106
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    • 2002
  • The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

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The Electrical Properties of Green OLED by Thickness of Al Layer (녹색 발광 OLED의 음극 두께 변화에 따른 전기적 특성)

  • Yang, Myung-Hak;Ki, Hyun-Chul;Kwak, Jae-Young;Min, Yong-Gi;Hong, Kyung-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.42-44
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    • 2008
  • In this study, we report an electrical properties of green OLEO, using the changed thickness of Al Layer. We investigated the electrical properties of OLEOs by IVL and optical properties by EL spectrum. The fundamental structure of green OLEOs was ITO anode/TPD($400{\AA}$)/$Alq_3(600{\AA})$)/LiF($10{\AA}$)/Al($200{\sim}600{\AA}$) cathode. The threshold voltage was low value according to the more thin Al layer. The luminance was increased by decreased cathode layer. The threshold voltage was 12V and wavelength was 530nm at $200{\AA}$ cathode.

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Structure Properties of Semiconductor Devices to Protect Electronic Circuit (회로보호용 반도체 소자의 구조적 특성)

  • 홍경진;민용기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.373-376
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    • 2001
  • When varistors for circuit protection is used at high voltage, it's operation properties were unstable because of leakage current and nonlinear coefficient with grain size. For the purpose of improving of ZnO varistor properties, high voltage ZnO varistor was fabricated with Y$_2$O$_3$addition. Electrical properties were investigated according to sintering conditions and mixing conditions. ZnO varistors was shown ohmic Properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance.

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Effect of Heat Treatment on Properties of Varistors (바리스터의 물성에 미치는 열처리 효과)

  • 홍경진;민용기;오수홍;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.955-958
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    • 2001
  • The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

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The Dielectric Characteristics of BaTiO$_3$by Changing both BaCO$_3$ and TiO$_2$ (BaCO$_3$와 TiO$_2$를 치환한 BaTiO$_3$의 유전특성에 관한 연구)

  • 홍경진;민용기;김태성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.21-24
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    • 1993
  • The microstructure of the cubic perovskite [(Ba$\sub$85.5/ Ca$\sub$15.5)(Ti$\sub$60/ Mn$\sub$40/)O$_2$]-based dielectrics has been investigated. BCTM which control both A-site and B-site has less electrical characteristics than BaTiO$_3$. The dielectric factor was decreased and the dielectric loss factor was improved because BaMnO$_3$was formed in the solide reaction method.

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A Study on Surface of BST Thin Films by Sol-Gel Methods (졸겔법으로 제작된 BST 박막의 구조적 특성)

  • 홍경진;민용기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.377-380
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    • 2001
  • The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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