• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Progress in Medical Physics
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• v.14 no.3
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• pp.161-166
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• 2003

To evaluate the performance of cadmium sulfide as a multi-function X-ray dosimeter, we made an X-ray detector that was based on cadmium sulfide using evaporation technology, and measured its response to X-ray exposure. The voltages of cadmium sulfide were measured on the various X-ray tube potentials, X-ray tube currents and exposure times. The regression analysis of the voltage response of CdS on the tube-potential variation was y=0.0995x-0.1146 ($R^2$=0.9595, $\sigma$=0.08, standard error=2%) and the regression analysis of the voltage response of CdS on the tube-potential variation was y=0.0439x+1.1891 ($R^2$=0.9021, $\sigma$=0.04, standard error=1.8%) The regression analysis of the voltage response of CdS on the X-ray exposure time variation was y=8.2853+5.5878 ($R^2$=0.7287, $\sigma$=0.06, standard error=1.9%). In conclusion, cadmium sulfide responded linearly to the variation X-ray conditions, suggesting cadmium sulfide to be a feasible X-ray sensor of multi-function dosimeter related instruments.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.4
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• pp.333-340
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• 2011

Purpose: The aim of this study was to study the effect of hydroxyapatite (HA) coating crystallinity on the proliferation and differentiation of human osteosarcoma cells. Materials and methods: Surface roughness of the titanium disks increased by anodizing treatment and then HA was coated using ion beam-assisted deposition (IBAD). HA coating was crystallized by heat-treated at different temperature ($100^{\circ}C$, $300^{\circ}C$, $500^{\circ}C$, $800^{\circ}C$). According to the temperature, disks were divided into four groups (HA100, HA300, HA500, HA800). With the temperature, crystallinity of the HA coating was different. Anodized disks were used as control group. The physical properties of the disk surface were evaluated by surface roughness tests, XRD tests and SEM. The effect of the crystallinity of HA coating on HOS cells was studied in proliferation and differentiation. HOS cells were cultured on the disks and evaluated after 1, 3, 5, and 7 days. Growth and differentiation kinetics were subsequently investigated by evaluating cell proliferation and alkaline phosphatase activity. Results: Regardless of the heat-treated temperature, there is no difference on the surface roughness. Crystallinity of the HA was appeared in the groups of HA500, HA800. HOS cells proliferation, ALP activity were higher in HA500 and HA800 group than HA100 and HA300. Conclusion: Within the results of this limited study, heat treatment at $500^{\circ}C$ of HA coating produced by IBAD has shown greater effect on proliferation and differentiation of HOS cells. It is considered that further in vivo study will be necessary.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

• Korean Journal of Animal Reproduction
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• v.18 no.4
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• pp.265-274
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• 1995

가토 20마리의 혈액중 혈소판의 수를 수정 전후로 조사한 결과, 수정전과 비교하여 수정후 1일부터 유의하게 감소하였으며 (26.84%, P<0.01), 이러한 감소는 수정후 5일까지 계속되었다. 수정후 5일동안 혈소판의 감소율과 혈소판의 최저치를 수정란의 수와 비교한 바, 이들간의 유의한 상관관계(r=0.5032)가 있었다. 가토수정란 (2세포기) 각각 30∼40개를 5마리의 비장적출수란가토의 난관에 이식한 다음, 혈소판수의 변화를 조사한 결과, 이식전에 비해 이식후 90분 (P<0.025)과 135∼270분 (P<0.025)에 유의한 감소를 확인하였따. 특히 수정란 이식후 180분경에 가장 크게 감소하였다 (P<0.001). 60∼70개의 2세포기 가토수정란을 24시간 배양한 다음, 배양액을 3마리의 비장적출가토에 주사한 후 혈소판의 변화를 조사하였을 때, 주사후 120분경부터 혈소판의 수가 유의하게 감소하기 시작하였다. 이들 배양액을 동결, 해동한 다음 주사한 실험에서도 유사한 결가를 얻었다. 또한 이 배양액을 비장적출생쥐에 주사한 경우에도 가토에서와 마찬가지의 혈소판 촉진현상이 나타났다. 혈소판 촉진인자(PAF)의 길항제인 kadsurenone이 첨가된 배양액에서 24시간동안 가토수정란을 배양한 다음, 이 배양액을 4마리의 비장적출생쥐에 주사한 결과, 혈소판수의 변화가 일어나지 않았다. 또한 kadsurenone이 첨가된 배양액에서는 2세포기 가토수정란의 상실기와 배반포기까지 발달율은 각각 4와 7%로 대조구의 7과 49%보다 유의하게 낮았다. 따라서 본 연구에서 가토의 초기배는 가토나 생쥐의 혈소판수를 감소시키고, 특히 길항제 처리는 이러한 혈소판 감소현상을 억제시킬 뿐만 아니라 가토 초기배발달을 억제한다는 것을 확인하였다. 결론적으로 가토초기배에서는 PAF 또는 수정란 유래의 PAF가 분비된다는 것을 알 수 있었으며, 이러한 인자는 동결처리에서도 그 기능은 전혀 변하지 않는다고 본다. 이후에 있어서 mouse LIF의 첨가는 돼지의 수정란을 배반포 이후의 단계에까지 발달시킬 수 있었다. 있어서 더 적합한 것으로 판단되었다. 5. 개발된 모형은 논 관개의 물리적 측면과 관리목표 모두를 고려한 것으로 계산된 효율은 벼, 생육 각 단계에서의 효율 비교에 양호한 방법임을 알 수 있다.은 Sharpsburg 점질양토에 대한 S.C.S 한계허용치 10ton/ha/year 이내로 나타났다. 비처리구에서의 토양유실량은 평균 2.56ton/ha/year로 높게 나타난 반면 3개의 서로 다른 추리구인 비수구, 초생수로구 및 Bromegrass구에서는 각각 0.152, 0.192 및 0.290ton/ha/year로 낮은 결과를 가져왔다. 6. 평균 침전량에 대한 L.S.D. 검정 걸과 전시험구중 비처리구가 고도의 유의차를 나타낸 반면 비수구, 초생수로구 및 Bromegrass 목초구 간에는 아무런 유의차가 인정되지 않았다. 7. 농지보전 처리구인 배수구와 초생수로구는 비처리구에 비해 낮은 침두 유출량과 낮은 토양유실량을 나타내었다.구보다 14% 절감되는 것으로 나타났다.작용하는 것으로 사료된다.된다.정량 분석한 결과이다. 시편의 조성은 33.6 at% U, 66.4 at% O의 결과를 얻었다. 산화물 핵연료의 표면 관찰 및 정량 분석 시험시 시편 표면을 전도성 물질로 증착시키지 않고, Silver Paint 에 시편을 접착하는 방법으로도 만족한 시험 결과를 얻을 수 있었다.째, 회복기 중에 일어나는 입자들의 유입은 자기폭풍의 지속시간을 연장시키는 경향을 보이며 큰 자기폭풍일수록 현저했다. 주상에서 관측된 이러한 특성은 서브스톰 확장기 활동이 자기폭풍의 발달과 밀접한 관계가 있음을 시사한다.se that were all low in two aspects, named "the Nonsignificant group". And the issues were high risk perception in general

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.49-54
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• 2003

We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.456-460
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• 2011

Recently, the size of currently-researched components and devices reduces nano-scale. Thus, it is important and emphasizes the analyses of physical properties in nano scale. Especially, the mechanical properties are not over micro-scale components but nano-scale components with different characteristics that has been reported. However, most analytical methods for currently studying in nano-scale are related to spectroscopy and electronics, affected the limitation of viewing size that these methods give only average information. In this research, the representative nanotribology analyses, nano-indenter study the physical and mechanical properties of W-N thin film for nano region and nano depth within nano-scale that the thickness of W-N diffusion barrier has less than tens of nanometers. The Scanning probe microscopy (SPM) study the surface image. From these results, the hardness of W-N thin film underneath the nano-surface decreased from 57.67 GPa to 9.1 GPa according to the increase of nitrogen gas flow. The elastic modulus of W-N thin film underneath the nano-surface also decreased from 575.53 GPa to 178.1 GPa.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.

• Elastomers and Composites
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• v.46 no.4
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• pp.277-283
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• 2011

In this study, engineering grade and high intensity reflective sheets were prepared with glass beads and their reflection performance and physical properties were investigated. The reflective sheets prepared by using glass beads are divided into enclosed or encapsulated lens type, depending on whether the glass beads are open in air or not. Because of an extra layer on the glass bead surface, the enclosed lens type reflective sheets show very little change in the properties by bad weather conditions, compared to encapsulated lens type reflective sheets. Optimization of the amount of glass beads on the surface was carried out, which determines the retroreflective properties. Enclosed and encapsulated lens type reflective sheets with various colors were prepared and their coefficients of retroreflection were determined. The encapsulated type reflective sheet with white color shows a coefficient of retroreflection of $210.4cd/1x{\cdot}m^2$, which is higher than the enclosed type ($74cd/1x{\cdot}m^2$). Effect of washing on the reflective property and adhesive power of the reflective sheets was investigated, and it is found that the number of glass beads decreased with washing and the aluminum layer deposited was damaged extensively in the encapsulated lens type reflective sheets.