• 한국연소학회:학술대회논문집
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• 2001.06a
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• pp.46-52
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• 2001

In this study, the generation of oxygen-free gas using catalytic combustion for industrial applications is explained ; heat treatment and copper annealing. For the experiment, Pd catalysts were determined by testing their catalytic activities over LPG in a micro-reactor. Combustion characteristics for the generation of oxygen-free atmospheric gas and the effect of flue gas upon surface oxidation were estimated form this experiment. As a result of the experimental investigation, we can state that the catalytic combustion could generate oxygen-free atmospheric gas suitable for industrial applications, but vapor produced by combustion process must be carefully considered as a new factor of surface oxidation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.164-164
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• 2003

UV 발광소자 재료로서 유망한 ZnO film을 ALE법으로 증착하고 photoluminescence특성을 조사하였다. Zn소스로서 DEZn(Diethylzinc)를, 산소 소스로서 DI water를 사용하였고 $N_2$ gas로서 챔버내에 주입된 소스물질을 purge하였다. ALE 공정온도 범위인 17$0^{\circ}C$와 CVD 반응온도 범위인 40$0^{\circ}C$로 ZnO 박막을 증착하고 이 시편을 산소 분위기에서 600-100$0^{\circ}C$의 온도로 1시간 동안 열처리하였다. 그리고 He-Cd laser를 사용하여 photoluminescence를 측정하였다. 17$0^{\circ}C$와 40$0^{\circ}C$ 에서 증착된 시편 모두 as-grown 상태에서는 거의 발광특성을 나타내지 못하였으나 후열처리를 거치면서 발광특성을 나타내었고 열처리 온도가 높을수록 발광강도가 증가하였다. 40$0^{\circ}C$에서의 증착된 시편의 경우는CVD반응이 발생하여 Zn-Zn결합이 많이 생성되어 열처리 온도가 증가하여도 발광강도가 약하였고 가시광 영역의 발광 또한 크게 증가하였으며 17$0^{\circ}C$에서 증착된 시편의 경우는 열처리 온도가 증가할수록 UV영역의 발광강도만이 크게 증가하였으며 가시광 영역의 발광은 거의 증가하지 않았다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.119-119
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• 2003

ZnO는 최근에 발광소자로서의 가능성 때문에 주목받고 있다. ZnO 박막의 성장에는 주로 CVD법과 스퍼터법이 사용되는데, CVD법 중 하나로서 cyclic CVD라고도 불리는 ALE법은 기존 CVD법에 비하여 증착속도는 떨어지나 박막의 표면거칠기가 매우 작고 대면적의 증착에서도 두께균일도가 상당히 우수하며 증착온도가 낮은 장점이 있다. 본 연구에서는 발광소자로서 응용이 가능한 ZnO박막을 사파이어(0001) 기판위에 ALE법으로 증착하고 후열처리가 photoluminescencey(PL) 특성에 끼치는 효과를 조사하였다. DEZn(diethylzinc)와 $H_2O$를 소스로 사용하여 사파이어 기판위에 ZnO 박막을 성장시키었고 기판온도로서 ALE window 범위인 17$0^{\circ}C$와 CVD증착 온도범위인 40$0^{\circ}C$를 설정하여 증착 시키었다. 그 후 후열처리로서 산소분위기에서 800, 900, 100$0^{\circ}C$에서 1시간 열처리를 하였다.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.956-960
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• 1998

The interfacial reaction between the CoINb bilayer and the $SiO_2$ substrate in the temperature range of $330^{\circ}C$-$800^{\circ}C$ in a vacuum has been investigated by X-ray photoelectron spectroscopy, glancing angle XRD, Auger Electron Spectroscopy and Atomic force microscopy. The Co and Nb were actively interdiffused at $600^{\circ}C$, and the layer inversion completed at $700^{\circ}C$. NbO was formed by interfacial reaction between the Nb interlayer and the $SiO_2$ substrate, while $Nb_20_5$ was formed on the surface by reaction of Nb with oxygen in the ambients. Free Si atoms obtained by the reaction between Nb and $SiO_2$ formed silicides like CoSi and $Nb_5Si_3$ by reacting with Co and Nb remnants. The sheet resistance of the Co/Nb bilayer increased substantially after annealing at $800^{\circ}C$. which is due to the agglomeration of the Co layer to reduce its surface energy.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1555-1559
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• 2008

The characteristics of 304 (Fe-18%Cr-12%Ni) and 316L (Fe-18%Cr-13%Ni-2.4%Mo) austenite stainless-steel compacts sintered with $5{\sim}15{\mu}m$ powder were investigated and the results led to the following conclusions: (1) When the sintering time was 3.6ks, the relative density of sintered compacts was $95{\sim}98%$, regardless of any other sintering condition. (2) When a vacuum sintering was done with $5{\mu}m$ stainless steel powders, almost fully-dense sintered compacts were obtained at is = 57.6ks. (3) The amount of residual oxygen in 304 and 316L sintered compacts was $0.5{\sim}0.6%$, regardless of sintering atmosphere. (4) The amount of residual oxygen in the vacuum sintered compact decreased more than 0.3 % due to addition of carbon powder, thereby reducing the formation of oxides. Furthermore, the addition of carbon improved the density of sintered compact, which enables us to make a fully-dense high performance sintered compact.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.330-332
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• 2013

소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$와 $CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing