• Title/Summary/Keyword: 무접합 나노선 트랜지스터

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Characteristic Analysis of 4-Types of Junctionless Nanowire Field-Effect Transistor (4가지 무접합 나노선 터널 트랜지스터의 기판 변화에 따른 특성 분석)

  • Oh, Jong Hyuck;Lee, Ju Chan;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.381-382
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    • 2018
  • Subthreshold swings (SSs) and on-currents of four types of junctionless nanowire tunnel field-effect transistor(JLNW-TFET) are observed. Ge-Si structure for the source-channel junction has the highest drive current among Si-Si, Si-Ge, and Ge-Ge junction, and the drive current increases up to 1000 times compared to others. Minimum SS of Si-Si junction is reduced by up to 5 times more than others.

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Variation of Threshold Voltage by Programming Voltage Change of a Flash Memory Device with Ge-MONOS (Ge-MONOS 구조를 가진 플레쉬 메모리 소자의 프로그래밍 전압에 따른 문턱 전압 관찰)

  • Oh, Jong Hyuck;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2019.05a
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    • pp.323-324
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    • 2019
  • For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

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