• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.32-38
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• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• Proceedings of the KIEE Conference
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• 2008.10c
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• pp.248-249
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• 2008

본 논문에서는 원칩 마이크로컨트롤러를 사용한 파워 LED 구동제어 시스템의 설계 및 구현에 대해 중점적으로 기술한다. 파워 LED의 조광제어 및 특정 조도에서의 정전류 구동을 위해 전류피드백을 통한 디지털 PI 전류제어 및 PWM 구동방식을 행하였고, 시각적인 깜박거림 없는 충분한 주파수의 스위칭을 통해 부스트 컨버터를 연속도통모드로 동작시켰다. 본 논문에서 제시한 파워 LED 구동을 위한 디지털 제어시스템은 최근의 에너지 및 환경규제에 적합한 조명관련 응용분야에서 다양하게 적용될 것으로 판단된다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.71-76
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• 2015

Recently, light emitting diodes (LEDs) have been studied to improve their efficiencies for the uses in various fields. Particularly in the aspect of chip structure, via hole type vertical LED chip is developed for improvement of light output power, and heat dissipations. However, current vertical type LEDs have still drawback, which is current concentration around the n-contact holes. In this research, to solve this phenomenon, we introduced isolation layer under n-contact electrodes. With this sub-electrode, even though the active area was decreased by about 2.7% compared with conventional via-hole type vertical LED, we could decrease the forward voltage by 0.2 V and wall-plug efficiency was improved approximately 4.2%. This is owing to uniform current flow through the area of n-contact.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.440-443
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• 2011

This paper aims to compose a new LED lighting control board in the LED lighting environment This LED lighting control board is designed to adjust the brightness of LED lighting depending on the change of surrounding brightness, and it is also designed to control the brightness by using ATmega128, which is an 8bit micro-controller, The PWM wave form likely to output into the LED driver is determined by the ADC value input through ADC.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.19-26
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• 2010

We found that saturated water vapor pressure is the most dominant stress factor for the degradation phenomenon in the package for high-power phosphor-converted white light emitting diode (high power LED). Also, we proved that saturated water vapor pressure is effective acceleration stress of LED package degradation from an acceleration life test. Test conditions were $121^{\circ}C$, 100% R.H., and max. 168 h storage with and without 350 mA. The accelerating tests in both conditions cause optical power loss, reduction of spectrum intensity, device leakage current, and thermal resistance in the package. Also, dark brown color and pore induced by hygro-mechanical stress partially contribute to the degradation of LED package. From these results, we have known that the saturated water vapor pressure stress is adequate as the acceleration stress for shortening life test time of LED packages.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.19-23
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• 2014

For the application of light-emitting diodes (LEDs) for general illumination, the development of high power LEDs chips became more essential. For these reasons, recently, modified vertical LEDs have been developed to meet various requirements such as better heat dissipation, higher light extraction and less cost of production. In this research, we investigate the effect of Size and Array of N-GaN contact on operation voltage with new structured padless vertical LED. We changed the size and array of N-electrodes and investigated how they affect the operation voltage of LEDs. We simulated the current crowding and expected operation voltage for different N-contact structures with commercial LED simulator. Also, we fabricated the padless vertical LED chips and measured the electrical property. From the simulation, we could know that the larger size and denser array of n-electrodes could make operation voltage decrease. These results are well in accordance with those measured values of real padless vertical LED chips.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.35-41
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• 2016

Ceramic-metal based high power LED array package was developed via thick film LTCC technology using a glass-ceramic insulation layer and a silver conductor patterns directly printed on the aluminum heat sink substrate. The thermal resistance measurement using thermal transient tester revealed that ceramic-metal base LED package exhibited a superior heat dissipation property to compare with the previously known packaging method such as FR-4 based MCPCB. A prototype LED package sub-module with 50 watts power rating was fabricated using a ceramic-metal base chip-on-a board technology with minimized camber deformation during heat treatment by using partially covered glass-ceramic insulation layer design onto the aluminum heat spread substrate. This modified circuit design resulted in a camber-free packaging substrate and an enhanced heat transfer property compared with conventional MCPCB package. In addition, the partially covered design provided a material cost reduction compared with the fully covered one.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.19-23
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• 2012

Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.70-73
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• 2007

생활수준의 향상으로 인하여 조명 및 디스플레이 제품을 이용하여 건물 및 건축물에 대하여 장식을 하는 것이 일반화 되어가고 있다. 본 연구에서는 옥외 및 옥내에 사인물로 사용되어지고 있으며 설치가 간편한 디스플레이 조명기기인 LED Tile을 개발하여 옥내 및 옥외용 디스플레이 조명 시장의 시장성 확보하기 위하여, 광학설계를 통한 고휘도 LED의 선정 및 배치, 케이스 설계를 실시하고 LED모듈에 AC 220V 전원을 직접 인가할 수 있으며 효율이 높고 최적화된 구동회로를 설계하였다. 또한 One Chip 마이크로컨트롤러를 사용하여 RGB LED의 광색가변 및 점멸 제어회로를 설계하고, LED 모듈간에 2개의 제어선만을 연결하여 다양하고 다이나믹한 패턴 동작(점멸, 광색가변)이 가능하도록 펌웨어를 설계하였다. 그 결과 설계된 LED Tile은 전체 크기가 $D130{\times}W130{\times}H50mm$로 매우 컴팩트하고 LED 배치 및 광학설계를 통하여 최대광도 60cd를 실현하였으며, LED Tile의 동작개수에 관계없이 설치가 간단하며 10개 이상의 디스플레이 패턴 제어가 가능하였다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1671-1672
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• 2006

사인물의 대명사인 네온사인 및 옥외용 광고 조명기기를 대체할 수 있는 LED Lighting Bar를 개발하여 옥외용 광고 시장의 시장성 확보하기 위하여, 광학설계를 통한 고휘도 LED의 선정 및 배치, 케이스 설계를 실시하고 LED모듈에 AC 220V 전원을 직접 인가할 수 있으며 효율이 높고 컴팩트한 구동회로를 설계하였다. 또한 One Chip 마이크로컨트롤러를 사용하여 RGB LED의 광색가변 및 점멸 제어회로를 설계하고, LED 모듈간에 2개의 제어선만을 연결하여 다양하고 다이나믹한 네온사인 동작(점멸, 광색가변)이 일어나도록 소프트웨어를 설계하였다. 그 결과, 설계된 LED Lighting Bar는 전체 크기가 $D150{\times}W50{\times}H50mm$로 매우 컴팩트하고 LED 배치 및 광학설계를 통하여 최대광도 70cd를 실현하였으며, LED Lighting Bar의 동작개수에 관계없고 설치가 간단하며 10개 이상의 사인 패턴 제어가 가능하였다.