• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.963-967
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• 2001

The effects of the sintering additives such as Bi$_2$O$_3$and V$_2$O$_{5}$ on the microwave dielectric and sintering properties of ZnTiO$_3$system were investigated. Densities of >97% of the theoretical densities have been attained for ZnTiO$_3$at the sintering temperature range of 870~90$0^{\circ}C$ with Bi$_2$O$_3$and V$_2$O$_{5}$ additions of $_3$were obtained with 0.6wt% Bi$_2$O$_3$and 0.5wt% V$_2$O$_{5}$; Qxf$_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -43 PPm/$^{\circ}C$. In order to improve temperature coefficient of resonance frequency, TiO$_2$was added to the above system. The optimum amount of TiO$_2$was 15mo1% when sintered at 87$0^{\circ}C$, at which we could obtain following results ; Qxf$_{o}$ = 44,700 GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.>.EX>.>.>.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Korean Journal of Crystallography
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• v.17 no.1
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• pp.24-32
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• 2006

The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.478-486
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• 1998

$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system was prepared by reaction of $CaCO_3,\;LaO_3,\;Nd_2CO_3$ and ,TEX>$TiO_2$ mixture at 1673 K, which can be applied for microwave dielectric ceramic materials. The lattice parameters of(1-x))$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system increased with the increase of x. Its structure was investigated by Rietveld profile-analysis of XRD in detail. Cations $ La^{3+}$ and Nd^{3+}$ were located at the $Ca^{2+}$ site in the range of $0\le \textrm x\le0.8$. crystal structure in $;(0\le \textrm x\le0.6)$ maintained space group Pnma with CaTiO_3 structure. The tiled and distorted $TiO_6$ was gradually released with the increase of x in $0\le \textrm x\le0.6$ .The structure was changed to a new space group of $Pmn2_1$ at the x value of 0.8. The relative dielectric constant $(\epsilon_r)$ of $(1-x)CaTiO_3-x(La_{1/3} Nd_{1/3})TiO_3$ ($(0\le \textrm x\le0.8)$) system was exponentially decreased by with the increased of x. The temperature coefficient of resonant frequency $(\tau_f)$ decreased with the increase of x in $0\le \textrm x\le0.6$ and then increased again at x=0.8 due to the change of crystal structure. The value of Q$\cdot f_o$ was 13800 (GHz) at x=0.2 and was very low under 2000 (GHz) in 0.4$\leq$x$\leq$0.8.