• Title/Summary/Keyword: 마이크로스트립 임피던스 변환기

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Application of Expanding-cell FDTD Method to Microstrip-to-Waveguide Transition (Expanding-cell 유한차분법의 마이크로스트립-도파관 변환기에의 적용)

  • 강희진;최재훈
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.3
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    • pp.345-351
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    • 2000
  • In this paper, we design and analyze a Ka-band microstrip line to rectangular waveguide transition using the expanding-cell FDTD method. The transition under investigation consists of a ridged waveguide, microstrip line, and $\lambda$/4 Chebyshev impedance transformer. To improve the accuracyand efficiency, the expanding-cell FDTD method is applied to analyze the characteristics of a ridged waveguide impedance transformer. To verify the accuracy of the expanding-cell FDTD method, S parameters of the analyzed transition are compared with those of experimental data. The efficiency of the present approach is verified by comparing the computational time for expanding-cell and that for fine cell. The relation between the number of step and operation bandwidth is analyzed by comparing the characteristics of four and three step Chebyshev waveguide impedance transformer.

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Measurement method of the signal transfer characteristic(S21) of the impedance transformer (임피던스 변환회로의 신호 전달특성(S21) 측정 방법)

  • Park, Ung-hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.10
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    • pp.1282-1289
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    • 2019
  • In order to measure the transfer characteristic(S21) of the impedance transformer, two impedance transformers must be symmetrically connected. However, the transfer characteristic of two symmetrically connected impedance transformers is influenced by the length of the intermediate connection line. This paper theoretically examines closely the length of the intermediate connection line to obtain the accurate transfer characteristic of the impedance transformer. The electrical length of the intermediate connection line for obtaining the accurate transfer characteristic of the 4:1(50-Ω:12.5-Ω) impedance transformer is calculated about 45°. Using the calculated length of the connection line, The λ/4-microstrip impedance transformer is fabricated at 1 GHz to measure the transfer characteristic. The symmetrically connected impedance transformer is measured the reflection characteristic(S11) of -40.64dB and the transfer characteristic(S21) of -0.154dB at 0.980GHz. This value is approximately equal to the theoretical calculated 987MHz center frequency and -0.15dB transfer loss value of the λ/4-microstrip impedance transformer.

Design and fabrication of rectangular waveguide-to-microstrip transition at Ka-band (Ka-band에서의 구형 도파관-마이크로스트립 변환구조의 설계 및 제작에 관한 연구)

  • 정진호;권영우;장영춘;천창율
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.7
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    • pp.1770-1776
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    • 1998
  • This paper presents a waveguide-to-mircostrip transition at Ka-band using antipodal finlines. Critical design parameters were identified with the help of theoretical analysis. Experimental optimization was performed together with 3-D FEM analysis in an effort to find optimum dimensions of the transition. In addition to the conventional antipodal finline transition, a new dielectric impedance transformer was introduced to further reduce the insertion loss. Optimized waveguide-to-microstrip transition showed an insertion loss of 0.3~0.4dB/transition at Ka-band. This transition provides superior reproducibility and better performance than conventional coaxcable-to-microstrip transition.

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Design and Fabrication of the Ka-band Waveguide to Microstrip Transition using Probe structure (프로브 구조를 이용한 Ka 대역 도파관-마이크로스트립 트랜지션의 설계 및 제작)

  • Kwon, Hyuk-Ja;Lee, Sung-Ju;Jang, Ho-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.7
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    • pp.67-71
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    • 2008
  • We report the waveguide to microstrip transition using probe structure for Ka-band transceiver. The waveguide to microstrip transition is composed of probe, inductive line, ${\lambda}/4$ impedance transformer, and $50{\Omega}$ microstrip line. For design of the transition, we optimized the characteristic impedances and the lengths of the component parts. The fabricated transition exhibits an insertion loss of 1.3 dB and the input/output return losses of below 14 dB between 30 and 40 GHz. The insertion loss of each transition is about $0.5{\sim}0.6dB$, considering the losses in the microstrip line and input/output waveguides.

The 4:1(50-Ω:12.5-Ω) microstrip-slot line impedance transformer using a dielectric resonator (유전체 공진기를 이용한 4:1(50-Ω:12.5-Ω) 마이크로스트립-슬롯 선로 임피던스 변환기)

  • Park, Ung-hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.11
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    • pp.1484-1491
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    • 2020
  • Since the slot line transmits electric and magnetic signals through the slot, the size of the slot greatly affects the signal power loss. In order to have low loss, the slot line is mainly used at a high frequency of above 3GHz on a substrate having a high dielectric constant(er). This paper proposes the 4:1 impedance transformer using a slot line on TLC-30 laminate (h=20mil, er=3.0; Taconic) being a relatively low dielectric constant at a frequency of 1.85GHz. In the proposed impedance transformer, the dielectric resonator is arranged on the slot line to reduce signal loss occurring at the slot line. The proposed 4:1 microstrip-slot line impedance transformer fabricated using a (Zr,Sn)TiO4 dielectric resonator(er=38) has the transmission loss(S21) of -0.375dB and the reflection value(S11) of -27.6dB at 1.855GHz. This confirms that the slot line can be stably used even in a low dielectric constant substrate and a low frequency region by using a dielectric resonator.

A Coaxial Waveguide-based Spatial Combiner Using Finline-to-Microstrip Transitions (핀라인-마이크로스트립 변환을 이용한 동축선로 도파관 형태의 공간 결합기)

  • Kim, Bo-Ki;Lee, Su-Hyun;Kim, Hyoung-Jong;Shin, Suk-Woo;Kim, Sang-Hoon;Kim, Jae-Duk;Choi, Jin-Joo;Kim, Seon-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.5
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    • pp.79-86
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    • 2011
  • In this paper, a S-band coaxial waveguide-based spatial combiner is proposed. The proposed combiner consists of coaxial waveguide, impedance transformer, and finline-to-microstrip transformer. The coaxial waveguide is used as the host of the combining circuits for higher output power and better uniformity by equally distributing the input power to each element. The finline-to-microstrip transformer is designed by using antipodal antenna, and obtained low reflection coefficient by applying the small reflection theorem. The measurement results show the coaxial waveguide combiner has a maximum combining efficiency of 95%.

A Novel Waveguide-based Ka-band Power Divider/Combiner Using Slotline-to-Microstrip Transitions (슬롯라인-마이크로스트립 변환을 이용한 도파관 형태의 Ka-band 전력 분배/결합기)

  • 정진호;천창율;권영우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.5C
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    • pp.506-511
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    • 2002
  • In this paper, waveguide-based power combiner using conventional slotline-to-microstrip transition was proposed at Ka-band. The proposed 2-way and 4-way power combiner consist of waveguide-to-slotline transition, two or four slotline-to-microstrip transitions, and impedance matching networks. Their structures were simulated and optimized by 3-D FEM simulation. The 2-way power combiner showed a very low back-to-back insertion loss of 1.0 dB and return loss better than 15 dB from 25.7 GHz to 29.8 GHz except the resonant frequency. The 2-way power combining approach was extended to 4-way power combining using slotline tee junction. The 4-way power combiner showed the similar performance to that of 2-way power combiner with 2 GHz smaller bandwidth.

Technical Research on Waveguide-to-Microstrip Transition Using an Inline Structure for Millimeter-Wave Seekers (Inline 구조를 이용한 밀리미터파 탐색기용 도파관-마이크로스트립 전이구조 기술 연구)

  • Park, Sang Woo;Lee, Dong Jae;Song, Sung Chan;Lee, Man Gyu;Kim, Yong Hwan;Kim, Jeong Ryul;Hong, Dong Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.1
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    • pp.54-59
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    • 2019
  • In this paper, we report on the waveguide-to-microstrip transition with an inline structure for the millimeter band. The waveguide-to-microstrip transition comprises a probe, an inductive line, a ${\lambda}/4$ impedance transformer, and a 50-ohm microstrip line. For the transition design, we optimized the characteristic impedances and lengths of the component parts. The fabricated transition exhibits an insertion loss of 2.1 dB and an input/output return loss of below 13 dB at a millimeter band frequency of 94 GHz.

The analysis of the operating characteristic for the wideband coaxial line impedance transformer (광대역 동축선로 임피던스 변환회로의 동작 특성 분석)

  • Park, Ung-hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.2
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    • pp.165-172
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    • 2019
  • Using two or more coaxial lines, if one port is connected in series and the other port is connected in parallel, it can be implemented the wideband transmission line transformer(TLT). Because the wideband TLT utilizes the outer conductor of the coaxial line, it is difficult to predict the characteristics. In this paper, based on the analysis for the transfer characteristic(S21) according to the loss of the each line in ${\lambda}/4$-microstrip line TLT, the operating characteristic of the fabricated wideband 4:1 TLT using two $25{\Omega}$-coaxial lines is investigated. The fabricated wideband TLT shows the notch characteristic in which the transfer signal sharply decreases at ${\lambda}/4$ frequency of the coaxial line and has a value within -0.2dB of the transfer characteristic(S21) in $0.06{\sim}0.2{\lambda}$ frequency range of the coaxial line. This transfer characteristics(S21) can change the operating frequency range slightly and set the optimum transfer characteristic(S21) at the desired frequency by changing the length of the microstrip line.

Dual-band L-section Impedance Transformer (이중 대역 L형 임피던스 변환기)

  • Park, Myun-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.9 no.5
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    • pp.67-71
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    • 2010
  • This paper proposes new dual-band impedance transformers based on the L-section circuit topology. The proposed circuits consist of a transmission line section with a stub line either at the source or at the load end. The dual-band operating conditions are analyzed in detail and simple design equations are derived in terms of the line lengths and impedances for the different circuit topologies and load conditions. The dual-band operation is confirmed through the design, fabrication and measurement in microstrip circuits based on the proposed method.