• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.81-84
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• 2003

부분방전시험은 고전압 고정자 권선의 절연상태를 검사, 평가 할 수 있는 중요한 수단이다. 전동기와 발전기에서 일어나는 절연 악화의 징후로써 부분방전이 발생되며 이러한 부분방전 신호를 검출하기 위한 센서로 SSC(Stator Slot Couple)를 사용한다. 하지만 현재 사용되고 있는 대부분의 SSC의 경우 설계에 있어 특성 임피던스가 실제구조에서 정확히 고려되지 않는 경향이 있다. 실제로 고정자 슬롯에 부착된 마이크로스트립 센서의 특성 임피던스는 정확히 50옴으로 정합 되지 않으며 이것은 센서의 성능에 중요한 영향을 미치게 된다. 그러므로 본 논문에서는 부분방전 센서의 성능을 개선시키기 위해 결합 전송선로(Coupled transmission line)를 이용한 임피던스 정합회로를 제안하고자 한다. 제안된 센서의 성능을 입증하기 위하여 고정자 슬롯에 설치된 기존의 SSC와 임피던스 정합회로를 부착한 센서를 시뮬레이션 한 후 비교 분석하였다. 결과적으로 제안된 정합 회로는 광대역 임피던스 정합 특성을 가지며 임피던스 부정합때문에 일어나는 기존 SSC의 성능 악화를 개선할 수 있었다.

• Composites Research
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• v.17 no.6
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• pp.22-27
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• 2004

The objective of this work is to design Surface Antenna Structure (SAS) and investigate fatigue behavior of SAS that is asymmetric sandwich structure. This term, SAS, indicates that structural surface becomes antenna. Constituent materials are selected considering electrical properties, dielectric constant and tangent loss as well as mechanical properties. For the antenna performance, SSSFIP elements inserted into structural layers were designed fur satellite communication at a resonant frequency of 12.5 GHz and final demonstration article was $16{\;}{\tiems}{\;}8$ array antenna. From electrical measurements, it was shown that antenna performances were in good agreement with design requirements. In cyclic 4-point bending, flexure behavior was investigated by static and fatigue test. Fatigue life curve of SAS was obtained. The fatigue load was determined experimentally at a 0.75 (1.875kN) load level, Experimental results were compared with single load level fatigue life prediction equations (SFLPE) and in good agreement with SFLPE. SAS concept is the first serious attempt at integration fur both antenna and composite engineers and promises innovative future communication technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.240-240
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• 2016

반도체 양자점은 불연속적인 에너지준위의 특성 때문에 고전적인 빛과는 다른 단일광자를 방출하여 양자정보 처리과정에 기본 요소로써 사용 될 수 있다. III-Nitride (III-N) 반도체 물질은 III족 원소의 구성비를 조절하였을 때 밴드갭 에너지차이가 크므로 깊은 양자 우물을 만들 수 있으며 최근에는 기존에 연구되던 III-Arsenide 기반의 반도체 양자점과 다르게 상온 (300 K) 동작 가능한 단일광자 방출원이 개발되었다.[1] 또한 약한 split-off 에너지 때문에 양자점 모양에 작은 비대칭성만 존재해도 큰 선형편광도를 가질 수 있다. 하지만 III-N 반도체 양자점의 이러한 특성에도 불구하고 이종기판과의 격자상수 불일치에 따른 많은 threading dislocation, 압전효과에 의한 큰 내부전기장에 의해 발광 효율이 떨어지는 등의 문제가 있다. 이를 해결하기 위해 반도체 양자점을 3차원 구조체와 결합하여 threading dislocation 및 내부전기장을 줄이는 연구들이 진행되고 있다.[2] 본 연구에서는 선택적 영역 성장 방식을 통해 마이크로미터 크기를 가지는 피라미드 형태의 3차원 구조체를 이용, 피라미드의 꼭지점에 형성된 InGaN/GaN 양자점의 광학적 특성에 대해 분석하였다. 저온(9 K)에서 마이크로 photoluminescence 측정을 통해 양자점의 발광파장이 피라미드의 옆면의 파장과는 다름을 확인하였다. 여기광의 세기에 따른 양자점의 발광 세기 측정하여 여기광에 선형 비례함을 보이고, 양자점의 편광도를 측정하여 선형 편광임을 확인하였다. 마지막으로, 광량에 대해 시간에 따른 상관관계를 측정함으로써 양자점이 양자 발광체의 특성을 보이는 지 확인하였다.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.1
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• pp.68-74
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• 2008

The substrate integrated waveguide (SIW) structure can be approximated as the rectangular waveguide using common dielectric substrate with via-holes. To realize reflection-type resonator, $50-{\omega}$ microstrip line can be used for coupling with the center plane of the cavity. The oscillator is designed to operate at 9.45 GHz using the reflection-type SIW cavity resonator. The phase noise of oscillator shows -98.1dBc/Hz at 100 KHz offset. In experiment, the reflection type SIW cavity resonator improves the loaded quality factor making the low phase noise oscillator possible. Due to the entirely planar structure of this resonator, this technique can also be adequate in oscillator applications for a low cost and low phase noise performance.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.47-52
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• 2018

In this study, the effects of the heat treatment and multi-scale hierarchical structures on the durability of the nano-patterned functional PMMA(Poly(methyl-methacrylate)) film was evaluated. The heat treatments that consisted of high-pressure/high-temperature flat pressing and rapid cooling process were employed to improve mechanical property of the PMMA films. Multi-scale hierarchical structures were fabricated by thermal nanoimprint to protect nano-scale structures from the scratch. Examination on surface structures and functionalities such as wetting angle and transmittance revealed that the preopposed heat treatment and multi-scale hierarchical structures are effective to minimize surface damages.

• Journal of the Mineralogical Society of Korea
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• v.29 no.2
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• pp.47-58
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• 2016

The Fe-component of pyrophyllite is an impurity that reduces its grade in the final product. In order to identify the amount of impurity in pyrophyllite and to remove the Fe from the ore using a dry method, microwave heating and magnetic separation were carried out. Pyrite and hematite were identified to contain pyrophyllite by microscopy, XRD, XRF, SEM/EDS and EPMA analysis. It is suggested that the euhedral pyrite in the pyrophyllite is formed by hydrothermal solution, and then the dissolution cavity structure is formed with a partial remainder of the pyrite which dissolved in acidic water. And the $Fe^{3+}$ ion contained in the acidic water precipitated out in the concentric structure of hematite as the origin of sedimentary structure. As a result of the microwave heating and magnetic separation experiments, the Fe removal rates obtained were 96% and 93% from pyrophyllite ore from the Sunsan mine and Wando mine, respectively. It is confirmed that the microwave heating and magnetic separation method was an environmentally friendly method to upgrade the low-grade pyrophyllite.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.894-900
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• 2004

There are many types of circularly polarized(CP) microstrip antenna elements, which are used as a good unit radiator. Since an advantage of CP antenna is no strict alignment requirements between Rx and Tx system, the printed antennas with circular polarization are very often used in numerous satellite and mobile radio systems. In order to realize the broad bandwidth of 3 dB axial ratio and impedance of CP microstrip antenna, complex feed structure and tri-plate patch element have been researched. This paper describes a design of wideband microstrip cross slot array antennas with circular polarization. The proposed antenna is composed of an open-ended microstrip feed line as a feeder and a cross slot as a radiator for circular polarization. To realize the wide bandwidth, tri-plate structure are considered and cross slot is electromagnetically coupled with feed line. Optimum parameters of 1-element cross slot antenna are analyzed and designed by method of moments. These parameters are also applied to may antennas design considered the mutual coupling between radiating elements. Right hand circular polarization(RHCP) and left hand circular polarization(LHCP) of the proposed antenna are easily controlled by asymmetrical cross slot structure and slot position. In 1-element and 15-element cross slot array antenna, the good axial ratio of 1 dB below and the broad bandwidth characteristics of antenna are obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.5
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• pp.513-520
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• 2003

In this paper, a novel design concept of frequency doubler using feedforward technique and DGS microstrip line is proposed. The feedforward loop plays a role of fundamental frequency suppression and DGS microstrip line suppresses over the 3rd order harmonic components. By using this new concept, the high suppression for the undesired signals could be achieved easily. The proposed technique is experimentally demonstrated in 1.87 GHz-to-3.74 GHz frequency doubler. The output power of -3 dBm at the frequency of 3.74 GHz(2f$\_$0/) is measured with 42.9 dB suppression of the fundamental frequency signal(f$\_$0/), 20.2 dB suppression of the 3rd harmonic signal(3f$\_$0/) and B9.7 dB suppression of the 4th harmonic signal(4f$\_$0/). The conversion loss of -2.34 dB ∼ -5.8 dB at the bandwidth of 100 MHz, the phase noise of -97.51 dB/Hz(＠10 kHz) were measured.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.9
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• pp.862-876
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• 1991

In this theses, the procedure for finding the equivalent immittance of an n-line coupled structures is presented in terms of the normal mode parameters of the n-line coupled system. The above generalized equations can be applied to the various Coupled structures including directional couplers, DC blocks, bandpass/band elimination filters, and various other uniformly coupled filters. The design equations are based on a simplified TEM(Quasi TEM) mode. The obtained results and the definition of the scattering parameters for a general coupled line four port with arbitrary terminations are used to present the procedure to determine the optimum physical dimensions matching the given load impedances connected to input, output port. Multiple coupled rnicrostrip two-port with three lines circuit designed shows little discrepancy between the conventional method and this one. Four port with five lines were fabricated on teflon substrate($e$r=2.55) with its thickness h=l.588mm designed at the center frequency, 4 GHz. Their measured results are fairly close to the ones by computation.