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Position of the hyoid bone and its correlation with airway dimensions in different classes of skeletal malocclusion using cone-beam computed tomography

  • Shokri, Abbas;Mollabashi, Vahid;Zahedi, Foozie;Tapak, Leili
    • Imaging Science in Dentistry
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    • v.50 no.2
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    • pp.105-115
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    • 2020
  • Purpose: This study investigated the position of the hyoid bone and its relationship with airway dimensions in different skeletal malocclusion classes using cone-beam computed tomography (CBCT). Materials and Methods: CBCT scans of 180 participants were categorized based on the A point-nasion-B point angle into class I, class II, and class III malocclusions. Eight linear and 2 angular hyoid parameters(H-C3, H-EB, H-PNS, H-Me, H-X, H-Y, H-[C3-Me], C3-Me, H-S-Ba, and H-N-S) were measured. A 3-dimensional airway model was designed to measure the minimum cross-sectional area, volume, and total and upper airway length. The mean crosssectional area, morphology, and location of the airway were also evaluated. Data were analyzed using analysis of variance and the Pearson correlation test, with P values <0.05 indicating statistical significance. Results: The mean airway volume differed significantly among the malocclusion classes(P<0.05). The smallest and largest volumes were noted in class II (2107.8±844.7 ㎣) and class III (2826.6±2505.3 ㎣), respectively. The means of most hyoid parameters (C3-Me, C3-H, H-Eb, H-Me, H-S-Ba, H-N-S, and H-PNS) differed significantly among the malocclusion classes. In all classes, H-Eb was correlated with the minimum cross-sectional area and airway morphology, and H-PNS was correlated with total airway length. A significant correlation was also noted between H-Y and total airway length in class II and III malocclusions and between H-Y and upper airway length in class I malocclusions. Conclusion: The position of the hyoid bone was associated with airway dimensions and should be considered during orthognathic surgery due to the risk of airway obstruction.

A Study on Pyrolysis of Styrene Dimer Fraction (SDF) (스티렌 이량체 유분의 열분해 연구)

  • Pei, Hai-Song;Kang, Yong;Cho, Deug-Hee;Choi, Myong-Jae;Lee, Sang-Bong
    • Applied Chemistry for Engineering
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    • v.17 no.3
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    • pp.321-326
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    • 2006
  • Thermal degradation of styrene dimer fraction (SDF, main compound: 47 wt% of 1,3-diphenylpropane), 5~15% of total products produced during decomposition of waste expanded polystyrene (WEPS) was investigated. Reaction condition of $360^{\circ}C$, and 152 kPa to 202 kPa was an optimum for high pressure degradation. Under this operating condition, the yield of oil was 73.8% and the selectivities to Ben, Tol, EB, SM, and AMS were 0.4, 30.9, 15.0, 19.6, and 4.2%, respectively. Non-catalytic fixed bed continuous degradation was conducted at reaction temperatures of $510{\sim}610^{\circ}C$ and contact time ranges of 2~24 min, where the yield was increased by increasing of reaction temperature and contact time. A $Cr_2O_3$ catalyst showed the highest activity and SM yield among acid, base, and redox catalysts. The conversion of 74.6% and the yield of Ben, Tol, EB, SM, and AMS were 0.4, 21.6, 9.7, 17.9, and 3.5%, respectively at $560^{\circ}C$ and contact time of 24 min. It is thought that styrene is converted to EB and other secondary products throughout the formation of diradicals of styrene.

Characteristics of Amorphous/Polycrystalline $BaTiO_3$ Double Layer Thin Films with High Performance Prepared New Stacking Method and its Application to AC TFEL Device (새로운 적층방법으로 제조된 고품위 비정질/다결정 $BaTiO_3$ 적층박막의 특성과 교류 구동형 박막 전기 발광소자에의 응용)

  • 송만호;이윤희;한택상;오명환;윤기현
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.761-768
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    • 1995
  • Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

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