• Title/Summary/Keyword: 레이저와 디스플레이 융합 기술

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Trend of Crystallization Technology and Large Scale Research for Fabricating Thin Film Transistors of AMOLED Displays (AMOLED 디스플레이의 박막트랜지스터 제작을 위한 결정화 기술 동향 및 대형화 연구)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
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    • v.9 no.5
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    • pp.117-124
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    • 2019
  • This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

Characteristics of 32 × 32 Photonic Quantum Ring Laser Array for Convergence Display Technology (디스플레이 융합 기술 개발을 위한 32 × 32 광양자테 레이저 어레이의 특성)

  • Lee, Jongpil;Kim, Moojin
    • Journal of the Korea Convergence Society
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    • v.8 no.5
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    • pp.161-167
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    • 2017
  • We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

Optical Technology of Mechanical Industries in the 21st Century (21세기 기계산업의 변화 - 광기술의 발전 동향)

  • Joo, Ki-Nam
    • Transactions of the KSME C: Technology and Education
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    • v.5 no.1
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    • pp.53-61
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    • 2017
  • In this review paper, the trend for optical technology is described as the development of mechanical industries in the $21^{st}$ century. Optical technology has been essential in various industries such as mechanical, electronic industries as the convergence technology. Based on the roadmap of optical science and technology, 12 working groups are categorized as the technical point of view and most of them are closely related to mechanical industries. Especially, solid-state lighting, optical metrology and industrial laser processing are important technologies in precision engineering and manufacturing. This paper introduces these optical technologies and their technological issues to look into the development trends and expectation.

Characteristics of Excimer Laser-Annealed Polycrystalline Silicon on Polymer layers (폴리머 위에 엑시머 레이저 방법으로 결정화된 다결정 실리콘의 특성)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
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    • v.9 no.3
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    • pp.75-81
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    • 2019
  • In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.

A Feasibility Study on the Infrastructure Project of Femto Fusion Technology (펨토 융합기술 기반구축사업 타당성 분석 연구)

  • Kim, Dae Ho;Kim, Tae Hyung
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.8 no.1
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    • pp.1-11
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    • 2013
  • The femto fusion technology refers to not only the technology for femtosecond($10^{-15}$ second) laser and but also the fusion technology of its application. This technology is comparable to the nano technology, the extreme technology on the space, and is of extreme time-domain technology. Now, we need to develop the hyperfine and high-precision femto fusion process technology which allows to miniaturize and highly integrate the products of mobile, semiconductor and display industries, the national main focusing growth industries. However, The femtosecond laser fabrication technology is essential in the development of fusion technology, but only a few of domestic researchers can handle the former. Under this condition, our government plans to develop the "femto fusion technology infrastructure project" as one of the ICT research infrastructure. So the purpose of this study is to analyze the feasibility of this project. We applied AHP(analytic hierarchy process) for this study. The final result shows that all the repondent's score is over 0.55 and the aggregated score is 0.846. And as a consequence, we can conclude that to do this project is feasible.

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Properties of Y3Al5O12:Ce3+,Pr3+ Single Crystal for White Laser Lightings (백색 레이저 조명용 Y3Al5O12:Ce3+,Pr3+ 단결정 특성)

  • Kang, Taewook;Lim, Seokgyu;Kim, Jongsu;Lee, Bong
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.37-41
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    • 2018
  • $Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was prepared by floating zone method. single crystal was confirmed to have a Ia-3d (230) space group of cubic structure and showed regular morphology. The optical properties, single crystal exhibited a emission band from green, yellow wide wavelength and 610nm, 640nm red wavelength vicinity. The luminance maintenance rate was decreased by phonon with increasing temperature, but high luminance is maintained more than powder phosphor. In addition, $Y_3A_{l5}O_{12}:Ce^{3+},Pr^{3+}$ single crystal phosphor was applied to a high power blue laser diode, we implemented high power white laser lightings. and it was confirmed that thermal properties over time, due to the effective heat transfer of complete crystal structure. We confirmed that excellent radiant heat properties than powder phosphor was applied to a high power white laser diode.

Characterization of photonic quantum ring devices manufactured using wet etching process (습식 식각 공정을 이용하여 제작된 광양자테 소자의 특성 분석)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.10 no.6
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    • pp.28-34
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    • 2020
  • A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.