• Journal of IKEEE
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• v.19 no.2
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• pp.193-200
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• 2015

In this paper, we propose the radiation measuring algorithm and the device composition using CMOS image sensor. The radiation measuring algorithm using CMOS image sensor is based on the radiation particle distinguishing algorithm projected to the CMOS image sensor and accumulated and average number of pixels of the radiation particles projected to dozens of images per second with CMOS image sensor. The radiation particle distinguishing algorithm projected to the CMOS image sensor measures the radiation particle images by dividing them into R, G and B and adjusting the threshold value that distinguishes light intensity and background from the particle of each image. The radiation measuring algorithm measures radiation with accumulated and average number of radiation particles projected to dozens of images per second with CMOS image sensor according to the preset cycle. The hardware devices to verify the suggested algorithm consists of CMOS image sensor and image signal processor part, control part, power circuit part and display part. The test result of radiation measurement using the suggested CMOS image sensor is as follows. First, using the low-cost CMOS image sensor to measure radiation particles generated similar characteristics to that from measurement with expensive GM Tube. Second, using the low-cost CMOS image sensor to measure radiation presented largely similar characteristics to the linear characteristics of expensive GM Tube.

• Journal of Powder Materials
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• v.31 no.2
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• pp.169-179
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• 2024

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.