• Title/Summary/Keyword: 등가 임피던스

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Design of Isolation-Type Matching Network for Underwater Acoustic Piezoelectric Transducer Using Chebyshev Filter Function (체비셰프 필터함수를 이용한 수중 음향 압전 트랜스듀서의 절연형 정합회로 설계)

  • Lee, Jeong-Min;Lee, Byung-Hwa;Baek, Kwang-Ryul
    • The Journal of the Acoustical Society of Korea
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    • v.28 no.6
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    • pp.491-498
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    • 2009
  • This paper presents the design method of an impedance matching network using an isolation transformer and the Chebyshev filter function for the high efficiency and the flat power driving of an underwater acoustic piezoelectric transducer. The proposed impedance matching network is designed for minimizing the reactance component of transducer and having the flat power response in the wide frequency range. We design a low pass filter with ladder-type circuit using the Chebyshev function as standard prototype filter function. In addition, we design the impedance matching network which is suitable for the equivalent circuit of transducer and the turn ratio of transformer through the bandpass frequency transformation. The proposed method is applied to the simulated dummy load of the tonpilz-type transducer operating in the middle frequency range. The simulation results are compared with the measured characteristics and the validity of the proposed method is verified.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

Seismic Amplification Characteristics of Eastern Siberia (동시베리아 지역의 지진 증폭 특성)

  • Park, Du-Hee;Kwak, Hyung-Joo;Kang, Jae-Mo;Lee, Yong-Gook
    • Journal of the Korean Geotechnical Society
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    • v.30 no.10
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    • pp.67-80
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    • 2014
  • The thickness of permafrost in Eastern Siberia is from 200 to 500 meters. The seasonally frozen layer can vary from 0 to 4m depending on ground temperature and its location. The shear wave velocity varies from 80m/s in summer to 1500m/s in winter depending on soil type. When melted, large impedence will occur due to the difference between the shear wave velocity of seasonally frozen soil and that of permafrost layer. Large displacement may occur at the boundary of the melted and the frozen layer, and this phenomenon should be considered in a seismic design. In this research, one-dimensional equivalent linear analyses were performed to investigate the effects of the seasonally frozen layer on ground amplification characteristics. Soil profiles of Yakutsk and Chara in Eastern Siberia were selected from geotechnical reports. 20 recorded ground motions were used to evaluate the effect of input motions. As the thickness of seasonally frozen layer and the difference in the shear wave velocity increases, the amplification is shown to increase. Peat, very soft organic soil widely distributed throughout Eastern Siberia, is shown to cause significant ground motion amplification. It is therefore recommended to account for its influence on propagated motion.

Characterization of Schottky Diodes and Design of Voltage Multiplier for UHF-band Passive RFID Transponder (UHF 대역 수동형 RFID 태그 쇼트키 다이오드 특성 분석 및 전압체배기 설계)

  • Lee, Jong-Wook;Tran, Nham
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.7 s.361
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    • pp.9-15
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    • 2007
  • In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.