• Electrical & Electronic Materials
• /
• v.6 no.2
• /
• pp.161-167
• /
• 1993

ZnO 바리스터의 비선형 전도특성은 입자의 구조로부터 설명할 수 있다. 본 논문에서는 ZnO 바리스터의 입자구조에 트랩된 캐리어를 분석하기 위해서 TSC 측정 기법을 사용하였다. 측정 결과로 부터 네개의 TSC피크를 얻었다. 고온으로 부터 첫번째 두번째와 세번째 TSC피크의 기원은 각각 트랩, 도너 밀도 및 입계층의 트랩으로 나타나고 네번째 피크의 기원은 공핍층에 있는 도너 이온의 탈분극에 의해서 기인하는 것으로 사료된다. .alpha.$_{1}$피크의 활성화 에너지는 약 0.33-1.42eV였다. 또한 바리스터의 예비동작 영역에서의 전도특성은 .alpha.$_{1}$과 .alpha.$_{2}$피크의 값에 지배된다는 것을 확인하였다.

• Electrical & Electronic Materials
• /
• v.1 no.3
• /
• pp.269-277
• /
• 1988

P형 Si(100)로 제작한 MOS 커패시터에 $Co^{60}$-.gamma.선을 주사한 후 고주파 C-V특성 곡선으로 부터 방사선 조사에 의해 유발된 산화막안의 트랩전하의 거동 및 Si- $SiO_{2}$계면에서의 트랩밀도 분포의 변화를 검토하였다. 산화막 느랩전하는 .gamma.선 흡수선량 증가와 더불어 증가하다가 $10^{7}$ rad 부근에서부터 서서히 포화하는 경향이 나타났으며 게면트랩밀도의 분포모양은 흡수선량의 증가와 더불어 전형적인 이그러진 W자형에서 넓혀진 V자형 분포로 변화하였으나 최소값은 항상 진성페르미준위( $E_{i}$)부근에 있었으며 그 밀도는 1.0*$10^{11}$~7.5*$10^{11}$[개/$cm^{2}$/eV]로 계산되었다. 또한, 일정 바이어스전압하에서의 조사선량에 따른 $V_{fb}$ 의 변화는 현저하지는 않았으나 바이어스 전압을 +12V로 인가할 때 변화방향의 반전상태가 관측되었다. 그 이유로는 Si측의 계면 부근에서 일어난 눈사태 전자가 산화막내로 주입됨에 따라 도너형 양전하의 수가 감소되기 때문으로 추정되었다.되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.333-336
• /
• 1999

The relationship between the DC degradation characteristics of the $ZnO-Bi_2O_3$ varistor and post-annealing is investigated in this study. $ZnO-Bi_2O_3$ varistors containing $SiO_2$ range 0.3 mol% were fabricated by standard ceramic techniques. The post- annealing is performed at $550^{\circ}C$ for 0, 1.5 and 5h. A little phase transition is found according to the analysis of X-ray diffraction. DC degradation tests were conducted at $115\pm3^{\circ}C$ for periods up to 22h. Current-voltage analysis was used to determine nonlinear coefficients($\alpha$). Capacitance-voltage analysis enable the donor density($N_d$) and the barrier height($E_B$) to be determined. From above analysis, it is found that the past-annealing for 5h improved degradation characteristics in $ZnO-Bi_2O_3$ with Si additive.

• Electrical & Electronic Materials
• /
• v.5 no.3
• /
• pp.284-294
• /
• 1992

합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.

• Korean Journal of Materials Research
• /
• v.2 no.1
• /
• pp.12-18
• /
• 1992

The trap levels of ZnO-based varistor are obtained by Isothermal Capacitance Transient Spectroscopy method. Here ICTS measuring system consists of YHP 4192A Impedance Analyzer and a personal computer for the data acquisition. Between $-40^{\circ}C$ and $60^{\circ}C$, the grain boundary trap levels of 0.48 and 0.94eV were detected for $ZnO-Bi_2O_3-MnO$ system. The hole omission spectra are observed in the case of the addition of CoO into the $ZnO-Bi_2O_3$ system, while the electron emission spectra are detected in the case of the addition of MnO. The nonlinear resistance coefficient $\alpha$ increases with the decrease of the dormer concentration. Finally, the trap level density of $ZnO-Bi_2O_3-MnO$ system is found to decrease with the amount of CoO, while $\alpha$ is found to increase with the amount of CoO.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.2
• /
• pp.63-67
• /
• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Korean Journal of Materials Research
• /
• v.3 no.2
• /
• pp.121-130
• /
• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.943-948
• /
• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• Korean Journal of Materials Research
• /
• v.9 no.7
• /
• pp.753-759
• /
• 1999

The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.22 no.3
• /
• pp.13-19
• /
• 2021

This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.