• Proceedings of the Korea Water Resources Association Conference
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• 2007.05a
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• pp.224-228
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• 2007

도시하천인 중랑천을 대상으로 EAP 수립을 위한 한 방안으로서 계획규모를 초과하는 200년 빈도(현재 설계빈도는 100년 빈도임) 홍수에 대하여 한강홍수위 변화에 따른 월류부 위치 (시경계, 당현천 합류점, 월계1교, 묵동천 합류점)와 방수로 설계조건인 횡월류부 폭(30, 50, 70 m), 월류고(계획, 위험, 경계홍수위) 및 하류단 경계조건(평수위, 100년 빈도, 200년 빈도)에 따른 하류부 수위 저감효과를 분석하는 기술적 판단 과정을 제시하였다. 부정류 해석을 통하여 각 조건에 따른 저감효과를 분석하였다. 방수로 설치위치에 따른 홍수위 저감효과는 동일규모 방수로일 때 시경계부근에 설치한 경우에서 가장 큰 효과를 나타내고 있어 최적의 지점으로 분석되었다. 또한, 가장 취약지구인 당현천 부근의 홍수위는 당현천 합류지점에 방수로를 설치한 경우에 가장 낮아지는 것으로 분석되었다. 횡월류부의 폭과 월류고에 따라 중하류부 일정구간에서 홍수위가 100년 빈도로 저감되는 효과를 나타내었으며, 월류부 폭 및 월류고가 클수록 그 영향이 크게 나타났으나, 한강의 배수위 영향구간인 묵동천 합류점 하류구간에서는 그 영향이 감소하였다. 또한, 전반적으로 한강홍수위 변화에 따라 하류부에서의 영향은 컸으나, 당현천 상류구간에는 그 영향이 작았다.

• The Journal of the Korea Contents Association
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• v.2 no.3
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• pp.1-15
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• 2002

A noel automated brain region extraction method in single channel MR images for visualization and analysis of a human brain is presented. The method generates a volume of brain masks by automatic thresholding using a dual curve fitting technique and by 3D morphological operations. The dual curve fitting can reduce an error in clue fitting to the histogram of MR images. The 3D morphological operations, including erosion, labeling of connected-components, max-feature operation, and dilation, are applied to the cubic volume of masks reconstructed from the thresholded Drain masks. This method can automatically extract a brain region in any displayed type of sequences, including extreme slices, of SPGR, T1-, T2-, and PD-weighted MR image data sets which are not required to contain the entire brain. In the experiments, the algorithm was applied to 20 sets of MR images and showed over 0.97 of similarity index in comparison with manual drawing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.688-690
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• 2017

Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The SCE occurred in on-state transistor raises limitation of operation range of transistor. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.6
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• pp.1069-1074
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• 2017

Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.815-824
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• 2005

In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.