• Title/Summary/Keyword: 단일현상 게이트파괴

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TID and SEGR Testing on MOSFET of DC/DC Power Buck Converter (DC/DC 강압컨버터용 MOSFET의 TID 및 SEGR 실험)

  • Lho, Young Hwan
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.42 no.11
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    • pp.981-987
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    • 2014
  • DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a MOSFET (metal-oxide semiconductor field effect transistor), a PWM-IC (pulse width modulation-integrated circuit) controller, inductor, capacitor, etc. It is shown that the variation of threshold voltage and the breakdown voltage in the electrical characteristics of MOSFET occurs by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 5 heavy ions make the gate of MOSFET broken in SEGR (Single Event Gate Rupture) testing. TID testing on MOSFET is accomplished up to the total dose of 40 krad, and the cross section($cm^2$) versus LET(MeV/mg/$cm^2$) in the MOSFET operation is studied at SEGR testing after implementation of the controller board.