• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.49-49
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• 2009

카메라 모듈용 적외선 차단 필터를 설계하고 이온빔 증착 장비를 이용한 코팅 공정 후 특성을 조사하였다. 코팅 실험에 앞서 Macleod 프로그램을 이용하여 640nm 차단 필터를 설계하였으며, 실험은 Ion-Assisted Deposition 장비를 사용하여 $TiO_2/SiO_2$ 유전층을 다층 박막으로 증착하였다. 투과도 분석에서 640nm 차단 필터는 설계 곡선과 약 8nm 이내에서 일치하였으며, 갓 성장된 박막 투과도는 400~600nm에서 약 80% 이었으며, 급속열처리 및 열처리 후 약 5% 증가된 투과도를 보였다. 표면거칠기 또한 감소하였다. 따라서 열처리로 인한 재결정화 및 결함감소에 의해 필터특성이 향상되었음을 알 수 있었다.

• Journal of the Korean Regional Science Association
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• v.39 no.4
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• pp.73-90
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• 2023

This research examines the impact of robotics integration on job dynamics in the U.S. manufacturing sector, adding to the critical dialogue on technological evolution and the future of jobs. Anchored in the task-model framework, the study hypothesizes that robotic integration exerts differential influences on diverse occupational clusters, each identified by their unique task-specific attributes. An in-depth examination was undertaken to elucidate the interplay between robotic integration and the occupation clusters. Employing a multilevel growth curve model, our empirical investigation tracked employment dynamics from 2012 to 2022 across 52 U.S. regions, covering 307 manufacturing occupations. The findings suggest a pronounced job decline within occupations necessitating manual dexterity. Nonetheless, the evidence does not conclusively support that the extent of robotics integration exacerbates this trend. These findings imply that the employment shifts in the U.S. manufacturing sector are predominantly driven by long-standing trends of deindustrialization and functional specialization, rather than by the recent diffusion of robotic technologies.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.647-647
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• 1998

(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

• Korean Journal of Social Welfare Studies
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• no.39
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• pp.315-342
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• 2008

The aim of this study was to examine growth trajectories of delinquent behaviors during adolescence. In addition, the effects of protective and risk factors that might account for individual difference in the level of delinquent behaviors and in the rate of change were examined. Four waves of data in the Korea Youth Panel Survey(KYPS) were used to analyze the linear growth modeling. The sample consisted of 3346 adolescents who were assessed at 4 measurement waves with approximately 1-year intervals. The results showed significant individual differences in both final level of delinquent behaviors and in the rate of change across 3 measurement occasions. Adolescent gender, family's socioeconomic background predicted the final level and the rate of change of delinquent behaviors. The protective effects of positive parenting and self-control were significantly associated with problem behaviors and the risk effects of the association with deviant peers and negative stigma were significant on the final level of delinquency. Self-control and deviant peer affiliation had differential influences over time significantly. Practice and policy implications as well as further research topic were discussed in the light of searching for important factors in preventing adolescent problem behaviors.