• Title/Summary/Keyword: 다중파장

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Analysis of Coupled Mode Theory for Design of Coupler Between Optical Fiber And Grating Assisted Waveguide (광섬유와 격자구조 도파로 결합기 설계를 위한 결합 모드 이론 분석)

  • Heo, Hyung-Jun;Kim, Sang-In
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.4
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    • pp.561-568
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    • 2017
  • In order to effectively utilize the Coarse Wavelength Division Multiplexing(CWDM) technology in optical integrated devices, a design of a wavelength selective coupler structure between an optical fiber and an optical waveguide in a flat substrate is can be considered. In this paper, we consider the coupling between a silicon waveguide with an air trench and a single mode fiber. We investigated the tendency of coupling efficiency and its limitations according to the grating depth. For this purpose, the coupling efficiency of coupler structure designed through modeling based on coupled mode theory is predicted and quantitatively compared with simulation results using finite element method.

Quantum well intermixing of compressively strained InGaAs/InGaAsP multiple quantum well structure by using impurity-free vacancy diffusion technique (Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중양자우물 구조의 무질서화)

  • 김현수;박정우;오대곤;최인훈
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.150-154
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    • 2000
  • We investigated the quantum well intermixing (QWI) of a compressively strained InGaAs/InGaAsP multiple quantum well (MQW) by using impurity free vacancy diffusion technique. The samples with InGaAs/$SiO_2$ capping layer showed a higher degree of intermixing compared to that of InP/$SiO_2$ capping layer after rapid thermal annealing (RTA). Band-gap shift difference as large as 123 meV (195 nm) was observed between samples capped with InGaAs/$SiO_2$ and with InP/$SiO_2$ layer at RTA temperature of $700^{\circ}C$. Using the InGaAs/$SiO_2$ cap layer, the band-gap wavelength of MQW was changed by the intermixing from 1.55 $\mu\textrm{m}$ band to 1.3 $\mu\textrm{m}$ band with a wavelength shift of a 237 nm. The transform from MQW structure to homogenous alloy was observed above the RTA temperature of $700^{\circ}C$.

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Architecture and Characteristics of Multi-Ring based Optical Network with Single-Hop between Edge Nodes (Edge Node간 단일 홉을 갖는 다중링 기반의 광네트워크 구성 및 특성)

  • Lee, Sang-Hwa;Lee, Heesang;Han, Chimoon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.6 s.324
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    • pp.69-78
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    • 2004
  • This paper proposes architecture and characteristics of a multi-ring based optical network with single-hop between edge nodes using the concept of circuit switching and multi-wavelength label switching to solve delay problem caused by applying crossconnectors as transit nodes in the wavelength division multiplexing(WDM) network. We suggest multi-ring based architecture composed single and multiple wavelength-bands with multi-wavelength labels, and analyze characteristics of two models. To avoid the packet collision in output ports of edge nodes due to output contention, the static and dynamic allocation scheme, which packets are allocated in time slots, is provided. Based on our analysis, it shows that delay only occur in not core nodes but edge nodes in the proposed architecture. In addition, we evaluate the probabilities of delay, packet loss, and call blocking in the proposed optical packet network.

A Multi-Section Complex-Coupled DFB Laser with a Very Wide Range of Self-Pulsation Frequency and High Modulation Index (매우 넓은 영역의 Self-Pulsation 주파수와 높은 변조 지수를 가자는 다중 영역 복소 결합 DFB 레이저)

  • Kim, Boo-Gyoun;Kim, Tae-Young;Kim, Sang-Taek;Kim, Sun-Ho;Park, Kyung-Hyun
    • Korean Journal of Optics and Photonics
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    • v.17 no.2
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    • pp.191-197
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    • 2006
  • We analyze the self-pulsation(SP) characteristics due to mode beating of two modes emitted in a multi-section complex-coupled (CC) DFB laser composed of two DFB sections and a phase control section between them. SP frequency due to mode beating of the two modes is determined by the difference of grating periods in the two CC DFB regions. As the difference of grating periods in the two CC DFB regions increases, the SP frequency increases from very low frequency to the THz region. In the case of a mode which is not located in the stop band of the other DFB region, the mode propagates into the other DFB region without a high reflection, so that output powers emitted in a multi-section CC DFB laser have high modulation indexes due to the large interaction between the two modes.

A Study on Design and Microwave Characteristics of a RF/IR Multispectral Absorber (전자파/적외선 다중파장 흡수체의 설계와 초고주파 특성에 관한 연구)

  • Minah Yoon;Suwan Jeon;Youngeun Ra;Yerin Jo;Wonwoo Choi;Yukyoung Lee;Kwangseop Kim;Jonghak Lee;Kichul Kim;Taein Choi;Hakjoo Lee
    • Journal of the Korea Institute of Military Science and Technology
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    • v.27 no.3
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    • pp.311-318
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    • 2024
  • In this paper, a design for a radio frequency(RF) and infrared(IR) absorber with metasurfaces is discussed in microwave frequency bands. The RF absorber includes double layers of metasurfaces to operate in S- and X-bands. Effects of sheet resistance of the metasurfaces and thicknesses of dielectric supporting layers on reflection responses are investigated. An IR stealth layer incorporates an array of conductive grids with slits to reflect IR signals but to transmit RF signals and visible rays. Periodicity of the grids and slits is studied for transmission responses in the X-band and a surface area ratio. Reflection responses of the RF/IR multispectral absorber are found to be lower than -10 dB and -16 dB in the S- and X-bands, respectively, from full-wave simulation. Finally, the RF/IR multispectral absorber is fabricated and its reflection responses are measured to verify designed performance.

Research and its trend on optoelectronic devices using SOI (Silicon on Insulator를 이용한 광소자의 연구동향)

  • 박종대
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.106-107
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    • 2000
  • 현대 사회의 정보서비스 수요 증가는 1990년대 초반 2.5Gbps급 광통신 상용 시스템에서 10 Gbps 광통신 시스템 시험운영 단계를 지나, 21세기의 정보처리 수요를 해결하기 위해 파장다중(WDM; Wavelength Division Multiplexing) 광통신을 이용한 THz급 광통신 시스템 및 이에 관련된 소자의 연구를 필요로 하고 있다. (중략)

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