• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.132.1-132.1
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• 2013

현재 고품위GaN 박막 성장은 사파이어 기판이 주로 사용되며, 사파이어 기판 상에 저온에서 질화물 완충층을 선성장한 후 고온에서 GaN 박막을 성장하는 2단계 공정법을 일반적으로 택하고 있다. 본 연구에서는 새롭게 주목받고 있는 신소재인 그래핀을 본 실험실에서 기개발한 확산이용형성법을 이용하여 사파이어 기판에 직접 코팅하여 이를 완충층으로 사용한 후, MOCVD를 이용하여 저온 완충 층의 성장없이 고온에서 직접 성장한 GaN 박막에 관한 연구를 진행하였다. 매우 얇은 두께인 ~0.6 nm의 그래핀을 완충층으로 도입함으로써 GaN의 성장모드가 3차원 모드에서 2차원 모드로 바뀜을 확인 할 수 있었고, 그래핀 완충층의 두께가 점점 두꺼워짐에 따라 고온 성장한 GaN 박막의 구조적, 광학적 특성이 향상되어 기존의 2단계 성장법으로 얻은GaN 박막의 특성에 비견할 만큼 향상됨을 확인할 수 있었다. 그래핀상에 성장한 GaN 박막과 2단계 성장법으로 성장한 GaN 박막 상에 동일한 InGaN/GaN 다중양자우물구조를 형성하여 유사한 내부양자효율을 얻을 수 있게 되어, 그래핀을 완충 층으로 한 GaN 박막의 광전 소자에의 응용가능성을 확인 할 수 있었다.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.504-508
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• 2019

The feasibility of replacing the tope cell of pn GaInP homojunction with our GaInP/AlGaInP heterojunction structure in III-V semiconductor multijunction photovoltaic (MJPV) cells having the highest current conversion efficiency was investigated. The performance of photovoltaic (PV) cells grown on $2^{\circ}$ and $10^{\circ}$ off-oriented GaAs substrates were compared to each other. The PV cells on the $10^{\circ}$ off-cut substrate showed higher short-circuit current density ($J_{sc}$) and conversion efficiency values than that of using the $2^{\circ}$ one. For $2{\times}2mm^2$ area PV cell on $10^{\circ}$ off substrate, the $J_{sc}$ of $9.21mA/cm^2$ and the open-circuit voltage of 1.38 V were measured under 1 sun illumination. For $5{\times}5mm^2$ cell on $10^{\circ}$ off substrate, the conversion efficiency was decreased from 6.03% (1 sun) to 5.28% (20 sun) due to a decrease in fiill factor (FF).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.26-35
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• 2007

We characterized the properties of the fabricated filter with the total internal reflection mirror (TIR) in the rectangular ring resonator and very small multimode interference (MMI) couplers on an InP material platform for photonic integrated circuits. Coupling power in and out of a resonator is increased by using an optimum MMI length of 110 ${\mu}m$ and a width of 9 ${\mu}m$, respectively. The semiconductor optical amplifier with the length of 120 ${\mu}m$ is integrated in the resonator to compensate the loss of the internal waveguide and the TIR mirror. A free spectral range of approximately 2 nm (244 GHz) is observed with an on-off ratio of 13 dB. The curve fitting also yields the power coupled per pass as 42%. To reach critical coupling at this coupling level would require a round trip loss of about 2.4 dB.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.16-22
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• 2013

A general characterization procedure based on the extraction of a 2n-port admittance matrix corresponding to n uniform coupled lines on the multi-layered substrate using the Finite-Difference Time-Domain (FDTD) technique is presented. In this paper, the frequency-dependent normal mode parameters are obtained from the 2n-port admittance matrix to analyze multi-layered asymmetric coupled line structure, which in turn provides the frequency-dependent propagation constant, effective dielectric constant, and line-mode characteristic impedances. To illustrate the technique, several practical coupled line structures on multi-layered substrate have been simulated. Especially, embedded conductor structures have been simulated. Comparisons with Spectral Domain Method are given, and their results agree well. It is shown that the FDTD based time domain characterization procedure is an excellent broadband simulation tool for the design of multiconductor coupled lines on multilayered PCBs as well as thick or thin hybrid structures.

• Journal of Advanced Navigation Technology
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• v.26 no.6
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• pp.516-521
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• 2022

In this paper, a compact 4-bit chipless RFID(radio frequency identification) tag using a modified ELC(electric field-coupled inductive-capacitive) resonator and multiple slot resonators is proposed. The modified ELC resonator uses an interdigital-capacitor structure in the conventional ELC resonator to lower the resonance peak frequency of the RCS. The multiple slot resonators are designed by etching three slots with different lengths into an inverted U-shaped conductor. The resonant peak frequency of the RCS for the modified ELC resonator is 3.216 GHz, whereas those of the multiple slot resonators are set at 4.122 GHz, 4.64 GHz, and 5.304 GHz, respectively. The proposed compact four-bit tag is fabricated on an RF-301 substrate with dimensions of 50 mm×20 mm and a thickness of 0.8 mm. Experiment results show that the resonant peak frequencies of the fabricated four-bit chipless RFID tag are 3.285 GHz, 4.09 GHz, 4.63 GHz, and 5.31 GHz, respectively, which is similar to the simulation results with errors in the range between 0.78% and 2.16%.

• Journal of Navigation and Port Research
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• v.31 no.6
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• pp.503-507
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• 2007

In this paper, the ultra-widebend, microstrip patch antenna with the bandwidth of 3 GHz was implemented for ultra-wideband(UWB) wireless communication applications. In order to cover the very wide bandwidth of 3 GHz, a multi-resonance antenna was designed, each resonance frequency was separated into five frequency bend, 7.5, 8.1, 8.7, 9.3, and 9.9GHz with the interval of 600MHz BW. And for wideband characteristics of each antenna, U-slot antennas were designed at each center frequency. Designed five U-slot antennas were connected in series for multi-resonance of 3GHz BW and wideband matching was also designed for impedance matching transmission line calculated. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\epsilon}_r=4.8,\;h=0.6$ and loss tangent=0.0009 respectively. The implemented antenna's radiation patterns and gain were directivity characteristics and $1.46{\sim}4.08dBi$ at the five separated center frequency.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.17-24
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• 1996

Planar multi-junction thermal converters were fabricated for precise measurements of the ac voltage and current by an ac-dc transfer method. A heater and a thermocouple array were fabricated onto a sandwiched membrane, $Si_{3}N_{4}$ (200 nm) / $SiO_{2}$ (400 nm) / $Si_{3}N_{4}$ (200 nm), a thickness of $0.8\;{\mu}m$ and a size of $2{\times}4\;mm^{2}$, which is supported by a surrounding frame. The NiCr heater is located at the center of the membrane vertically. Hot junctions of $48{\sim}156$ pairs of thermocouples (Cu-CuNi44) are located near or onto the heater, and cold junctions are located onto the silicon frame. Output of the thermal converters for 10 mA dc input was $76\;mV{\sim}382\;mV$ dependent on a model, and short term stability of the outputs was ${\pm}5{\sim}15\;ppm$/ 10 min with 5 mA dc input. Responsivity in air was in the range of $3.9{\sim}14.5V/W$. Responsivity of the model BF48 in air which has 48 thermocouples was 2 times or greater than that of 3 dimensional multi-junction thermal converter in vacuum which has 56 thermocouples. AC-DC transfer differences with an input of 10 mA or less were less than ${\pm}1\;ppm$ in the frequency range from 5 Hz to 2 kHz, and about $2{\sim}3\;ppm$ at 5 kHz and 10 kHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.11-19
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• 2013

In this paper, we designed and implemented the planar monopole antenna using the coupling effect for the multi-band characteristic. A parasitic element for the multi-band characteristic based on a rectangular patch with single resonance is inserted. Spiral shaped parasitic element is used for minimizing the antenna size and obtaining the multi-resonance characteristic. The frequency characteristics are modified and optimized by varying specific parameters. By inserting an L-shaped resonator at both sides of the feed line which connected through the via hole to the ground plane, unnecessary frequency bands are eliminated. Proposed antenna dimension is $40{\times}60{\times}1mm^3$. It is fabricated on the FR-4 substrate(${\varepsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. By measurement results, the characteristic of the return loss under -10 dB are 1.714~2.496 GHz, 2.977~4.301 GHz, and 4.721~6.315 GHz, and the radiation patterns have omni-directional shapes.

• 한국정보통신설비학회:학술대회논문집
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• 2002.08a
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• pp.17-20
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• 2002

본 논문에서는 세라믹 칩 안테나를 LTCC로 구현하여 다중 대역 특성을 얻는 방법을 제안하고 있다. 휴대용 단말기에 칩 안테나를 내장함으로 물리적 손상을 피하고 위치추적 시스템(GPS) 대역과 단말기 송수신용 대역, 즉 두 대역 이상 사용 가능하고 ${\varepsilon}_r=7.8$인 세라믹 칩 안테나를 LTCC(Low Temperature Co-fired Ceramic)공정을 이용하여 세라믹 칩 내부에 정합 회로를 구현하여 이중 대역 특성을 갖는 구조에 대해 논의하고 있다. 안테나의 전체 크기는 $16mm{\times}4mm{\times}2mm$ 이며 대역폭은 삽입손실 -10dB 기준 대략 1560MHz에서 2160MHz까지 약 600MHz정도이다. 측정은 접지면의 넓이가50mmx50mm이고 두께=0.7874mm, ${\varepsilon}_r=4.6$인 FR4 기판을 이용하여 측정한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.931-935
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• 2003

A multilayer two-stage LC bandpass filter using low-temperature cofired-ceramic(LTCC) is proposed in this paper. The proposed bandpass filter is composed of two ceramic substrates with different dielectric constant instead of single ceramic material from top to bottom layer. Inductive elements are designed in a low permitivity ceramic layer to reduce parasitic effects and loss, while capacitive elements are designed in a high permitivity ceramic layer for size reduction. The proposed filter has 950 MHz center &equency, 118 MHz tractional bandwidth, and 3.5 dB insertion loss. And, the total size of this filter is 2.5${\times}$2.5${\times}$l.4mm$^3$. The performance of filter is analyzed by changing coupling capacitance between each resonator.