• Title/Summary/Keyword: 다중기판

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Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties (DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성)

  • Kim, Kwang-Sik;Ryu, Ho-Jin;Jang, Gun-Eik
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.171-177
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    • 2002
  • In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

Multi-walled Carbon Nanotube-Reinforced Hydroxyapatite Coating on Ti Substrates by Aerosol Deposition (에어로졸 증착법에 의해 티타늄 기판위에 제조된 다중벽 탄소나노튜브 강화 수산화아파타이트 코팅층)

  • Hahn, Byung-Dong;Park, Dong-Soo;Ryu, Jung-Ho;Choi, Jong-Jin;Yoon, Woon-Ha;Lee, Byung-Kuk;Kim, Hyoun-Ee
    • Journal of the Korean Ceramic Society
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    • v.45 no.10
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    • pp.610-617
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    • 2008
  • Multi-walled carbon nanotube(CNT) reinforced hydroxyapatite composite coating with a thickness of $5{\mu}m$ has been successfully deposited on Ti substrate using aerosol deposition(AD). The coating had a dense microstructure with no cracks or pores, showing good adhesion with the Ti substrate. Microstructural observation using field-emission scanning electron microscopy(FE-SEM) and transmission electron microscopy(TEM) showed that CNTs with original tubular morphology were found in the hydroxyapatite-CNT(HA-CNT) composite coating. Measurements of hardness and elastic modulus for the coating were performed by nanoindentation tests, indicating that the mechanical properties of the coating were remarkably improved by the addition of CNT to HA coating. Therefore, HA-CNT composite coating produced by AD is expected to be potentially applied to the coating for high load bearing implants.

Printed Meander-Monopole Antenna for Multiband Wireless USB Dongle Applications (무선 USB 동글 장치를 위한 프린트형 미앤더 모노폴 안테나)

  • Jeong, Seong-Jae;Hwang, Keum-Cheol;Shin, Jae-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1154-1160
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    • 2010
  • In this paper, a novel printed meander monopole antenna is proposed for wireless USB dongle applications. Dual-wideband resonance is obtained by utilizing a printed meander monopole radiator. The proposed antenna was fabricated on a thin FR-4 substrate with a thickness of 1 mm and a dielectric constant of 4.6. The antenna is fed by a $50{\Omega}$ coaxial cable. This novel USB dongle antenna measures only $10{\times}50mm^2$. The measured results demonstrates that the antenna supports WiBro, Bluetooth/ISM, WLAN, S-DMB, and WiMAX service bands.

Synthesis of Three-Dimensional Graphene Using Porous Nickel Nanostructure (다공성 니켈 나노 구조체를 이용한 3차원 그래핀의 합성)

  • Song, Wooseok;Myung, Sung;Lee, Sun Sook;Lim, Jongsun;An, Ki-Seok
    • Composites Research
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    • v.29 no.4
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    • pp.151-155
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    • 2016
  • Graphene has been a valuable candidate for use as electrodes for supercapacitors. In order to improve the surface area of graphene, three-dimensional graphene was synthesized on porous Ni nanostructure using thermal chemical vapor deposition and microwave plasma chemical vapor deposition. The structural and chemical characterization of synthesized graphene was performed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was confirmed that three-dimensional and high-crystalline multilayer graphene onto various substrates was synthesized successfully.

Growth and characterizations of INAlAs epilayers and InGaAs/INAlAs quantum well structures by low pressure metalorganic chemical vapor deposition (저압 유기금속 화학증착법을 이용한 InAIAs 에피층과 InGaAs/InAIAs 양자 우물 구조의 성장과 분석)

  • 유경란;문영부;이태완;윤의준
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.328-333
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    • 1998
  • Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

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Miniaturization of Dual-Element Folded Dipole Antenna Using Zigzag Line for Multi-Band Service (다중 대역 서비스를 위한 지그재그 선로를 이용한 이중 소자 폴디드 다이폴 안테나의 소형화)

  • Jeon, Hoo-Dong;Ko, Ji-Hwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.270-276
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    • 2018
  • Fifth-generation communications are approaching, and they will require broadband antennas that include the existing LTE frequency band (1.7 GHz to 2.7 GHz) and the newly allocated frequency band (3.4 GHz to 3.7 GHz). Many kinds of antennas satisfy the required broadband characteristics, including the dual-element folded dipole antenna proposed in this paper. A zigzag line was used to make the antenna more compact. This was accomplished by reducing the physical length while maintaining the electrical length. To validate the proposed antenna, a prototype was fabricated using PCB (${\epsilon}_r$:4.4, Height: 1.6 mm) and its performance was evaluated. Results obtained by simulation and experiment showed good agreement.

MPP (modulated pulse plasma) 스퍼터링 방법으로 증착한 100 nm 이하에서의 Indium-Tin-Oxide (ITO)박막 특성

  • Yu, Yeong-Gun;Jeong, Jin-Yong;Ju, Jeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.256.2-256.2
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    • 2014
  • 최근 고출력 펄스 스퍼터링, HPPMS (high power pulsed magnetron sputtering)을 개선한 기술이 개발되고 있다. High power impulse magnetron sputtering (HIPIMS)이라고도 불려지는 이 기술은 Kouznetsov1) 에 의해 개발되었으며, 짧은 주기 동안 높은 peak power 밀도를 얻을 수 있기 때문에, 스퍼터링시 높은 이온화율을 만들 수 있다. 스퍼터 된 종들의 높은 이온화는 다양한 분야에서 기존 코팅 물질의 특성 개선 및 self-assisted 이온 증착 공정을 통해 우수한 박막을 제조하는데 기여되고 있다. 그러나 HIPIMS는 순간 전력 밀도가 MW수준으로 높아서 고융점, 고열전도도의 물질에만 적용할 수 있다는 단점을 가지고 있다). 최근에 HIPIMS를 대체하기 위해 modulated pulse POWER (MPP)가 개발되었다. 이것은 스퍼터 된 종들의 이온화율을 높일 수 있음과 동시에 여러 가지 물질에 적용할 수 있다고 보고하고 있다. MPP와 HIPIMS와의 차이점은 HIPIMS는 간단한 하나의 초고출력 펄스를 이용하는 반면에, MPP는 펄스 길이 3 ms 안에서 다양하게 조절이 가능하며, 한 전체 펄스 주기 안에서 다중 세트 펄스와 micro 펄스를 자유롭게 조합하여 인가할 수 있다는 장점이 있다. 본 실험에서는 In2O3 : SnO2의 조성비 10:1 wt% target을 사용하였으며, Ar:O2의 유량비는 10:1의 비율로, 기판의 온도를 올려 주지 않는 상태에서 실험을 하였다. Ar 유량을 40 sccm으로 고정시킨 후 O2의 유량을 2~6 sccm에 대하여 비교를 하였다. 박막의 두께를 100 nm로 이하로 하였을 때 비저항은 $7.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 10 cm2/Vs 이상의 mobility를 얻을 수 있었다. 또한 박막 두께 150 nm로 고정, substrate moving에 따른 ITO 박막의 차이를 알아보았다. 비저항의 값은 $5.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 15 cm2/Vs의 값을 얻었다.

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Numerical Modeling of Very High Frequency Multi Hollow Cathode PECVD (Very High Frequency Multi Hollow Cathode PECVD 장치의 수치모델링)

  • Joo, Jung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.331-340
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    • 2010
  • 3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

열적 응집된 Pt 나노입자 마스크를 이용한 실리콘 나노구조 제작

  • Im, Jeong-U;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.186-186
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    • 2011
  • 태양전지의 효율을 증가시키기 위해서는 표면에서의 Fresnel 반사를 줄여 입사된 빛이 흡수층까지 잘 도달되도록 해야 한다. 그러나 결정질 실리콘의 경우, 굴절률이 높아 32% 이상의 표면반사율을 보이고 있어, 실리콘 태양전지 표면에 단일 또는 다중 박막의 무반사 코팅을 통해 반사율을 낮추는 방법이 널리 사용 되어 오고 있었다. 하지만, 이와 같은 코팅 방법은 열적팽창 불일치, 물질 선택의 어려움뿐만 아니라 낮은 반사율을 포함하는 파장 및 빛의 입사각 영역의 제한 등 여러 문제점을 지니고 있다. 이러한 문제점을 보완하기 위해, 표면에 서브파장의 주기를 갖는 나노구조(subwavelength structure, SWS)의 형성에 관한 연구가 활발히 진행되고 있다. 습식 식각보다 건식 식각을 이용한 SWS 제작 방법이 표면 profile을 제어하기 용이하나 패턴 형성을 위해 식각 마스크가 필요하다. 최근, 복잡하고 고가의 전자빔 또는 나노임프린트를 이용한 패턴 형성보다, 간단/저렴하며 대면적 제작이 용이한 금속 나노입자 마스크를 이용한 SWS의 제작에 대한 연구가 활발히 진행되고 있다. 또한 SWS의 무반사 특성은 표면 profile에 따라 크게 영향을 받는다. 따라서 본 실험에서는 열적 응집현상에 의해 형성되는 self-assembled Pt 나노입자 식각 마스크 및 $SiCl_4$가스를 사용한 유도결합 플라즈마(inductively coupled plasma, ICP) 장비를 이용하여 무반사 실리콘 SWS를 제작하였으며, SWS 표면 profile에 따른 구조적 및 무반사 특성을 조사하기 위해 다양한 공정조건을 변화시켰다. 실리콘 기판 위의 Pt 박막은 전자빔 증착(e-beaml evaporation)법을 사용하였고, 급속 열처리(RTA)를 통해 Pt 나노입자의 식각 마스크를 형성시켰다. Pt 나노입자들의 패턴 및 제작된 무반사 실리콘 SWS의 식각 profile은 scanning electron microscope를 사용하여 관찰하였으며, UV-VIR-NIR spectrophotometer를 사용하여 350~1050 nm 파장 영역에서의 반사율을 측정하였다. ICP 식각 조건을 변화시켜 5% 이하의 낮은 반사율을 갖는 높이가 높고 쐐기 형태의 실리콘 SWS를 도출하였다.

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Sectorial Form UWB Antenna with a CPW-fed Uni-Planar (CPW 급전 단일 평면 부채꼴형 UWB 안테나 설계 및 제작)

  • Kim, Nam;Son, Gui-Bum;Park, Sang-Myeong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.3 s.118
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    • pp.305-314
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    • 2007
  • In this paper, we suggested a CPW-fed UWB antenna with uni-planar sectoral structure. The area where radiation device face ground is designed to have the shape of tapered slot based on exponential function. We modified a rectangular bow-tie dipole structure antenna and thus formed a multi-resonant mode. From this, we expanded the impedance bandwidth and made a feature satisfying VSWR of less than 2 between $3.1\sim10.6GHz$. The test result showed that the return loss less than -10 dB was met in the full-band UWB system and maximum gain of $0.9\sim3.1dB$ was made with the half-power beamwidth of $40.1\sim89.9^{\circ}$ on XY plane(Theta, $Phi=90^{\circ}$) and the full band. By using CPW-fed structure with no ground on the back of the substrate, the suggested antenna is easy to design and its miniaturization is also possible.