• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.214-217
• /
• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

• Analytical Science and Technology
• /
• v.24 no.2
• /
• pp.105-112
• /
• 2011

Syntheses and property analysis of hydropolysilanes were studied. Those hydropolysilanes can be utilized as precursors for amorphous silicon and polycrystallline silicon for the purpose of the solar cell and the thin film transister for the next generation's semiconductors. Most important characteristics of this study are to find optimized conditions for the synthesis and property analysis of soluble hydropolysilanes. Also the possibility of pyrolytic conversion to amorphous and polycrystalline silicon was investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.269-277
• /
• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.4
• /
• pp.182-186
• /
• 2003

The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.597-600
• /
• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• Electrical & Electronic Materials
• /
• v.10 no.10
• /
• pp.1034-1040
• /
• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Solar Energy
• /
• v.5 no.2
• /
• pp.54-59
• /
• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.2
• /
• pp.47-53
• /
• 2014

Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.12
• /
• pp.2909-2916
• /
• 2000

6.5wt% Si steel is widely known as an excellent magnetic material because its magnetostriction is nearly zero. The AX magnetic properties as magnetostriction of 6.5% Si steel were evaluated and compared with those of conventional 3% Si steel sheet. In this paper, the fracture behavior of the poly crystals and single crystals of Fe-6.5wt%Si alloy has been observed. Single crystals were prepared by Floating Zone(FZ) method, which melts the alloy by the use of high temperature electron beam in pure argon gas condition. And the single crystals were annealed at 500$^{\circ}C$ and 700$^{\circ}C$ respectively and tensile tested at room temperature. According to the result, B2 phase has more good elongation than DO$_3$ phase. It was also found that the fracture surfaces of the single crystals have hairline facets in same direction, and the facets change the direction according to the single crystal phase.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.7
• /
• pp.1073-1081
• /
• 2001

Many researches have published numerous papers about the high-strain-rate obtained from Split Hopkinson Pressure Bar(SHPB) tests. And 6.5wt%Si steel is widely known as an excellent magnetic material because its magnetostriction is nearly zero. Single crystals are prepared by the Floating Zone(FZ) method, which melts the alloy by the use of a high temperature electron beam in a pure argon gas condition. In this paper, the fracture behavior of the poly crystals and single crystals (DO$_3$phase) of Fe-6.5wt%Si alloy by SHPB test is observed. The comparison of high-strain-rate results with static results was done. Obtained main results are as follows: (1) Fe-6.5wt%Si alloy has higher strength at high-strain-rate tensile. SHPB results of polycrystal are twice as high as static results. (2) From the fractography, the cleavage steps are remarkably reduced in the SHPB test compared with the static test.