• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2014년도 추계학술대회 논문집
• /
• pp.158-159
• /
• 2014

무반사 효과를 보이는 나방눈을 관찰해보면 눈 표면에 회전포물체 형상 나노패턴이 형성된 것을 확인할 수 있다. 본 논문에서는 회전포물체 형상 AAO를 제작하였으며 이 마스터를 이용해 전주공정으로 니켈스탬퍼를 제작하였다. 제작된 father, mother 니켈스탬퍼 윗면의 나노패턴 형상을 FE-SEM(Field Emission Scanning Electron Microscope)으로 확인하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.156-157
• /
• 2007

나노임프린팅 기술을 이용하여 원기둥형 나노 패턴을 갖는 도광판을 제작하였다. 나노 임프린트 공정을 이용하기 위해서는 니켈 스탬퍼가 필요하기 때문에 이를 제작하기 위하여 실리콘 웨이퍼 상에 건식식각을 이용하여 실리콘 몰드를 제작하였다. 제작된 실리콘 몰드를 전주도금을 이용하여 니켈 스탬퍼를 제작하였다. 제작된 니켈 스탬퍼를 사용한 나노임프린트 공정을 통해 원기둥 나노패턴을 갖는 도광판을 제작하였다.

• 한국금형공학회:학술대회논문집
• /
• 한국금형공학회 2008년도 하계 학술대회
• /
• pp.35-38
• /
• 2008

A pattern master and a Ni stamper for 50nm class of patterns are fabricated through e-beam lithography and Ni electroforming process. A model pattern set is designed, which is based on unit patterns of 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The e-beam process is optimized to fabricate designed patterns with some parameters including dose, accelerating voltage, focal distance and developing time. For Ni electroforming to fabricate Ni stamper, a seed layer, a conducting layer, is deposited first on the pattern master fabricated by an e-beam lithography process. Ni, Ti/Ni and Cr are first tested to find optimal seed layer process. Currently the best result is obtained when adopting Cr deposited to be 100nm thick with continuous tilting motion of the master substrate during the deposition process.

• 대한기계학회논문집A
• /
• 제28권11호
• /
• pp.1794-1798
• /
• 2004

We present a fabrication method of high aspect ratio 100nm-scale nickel stamper using e-beam writing for the injection molding of optical grating patterns. Conventional nickel stamper is fabricated by nickel electroplating process which is followed by seed layer deposition. In this paper, we have used chrome coated blank mask without anti-reflection layer of CrON in order to simplified electroplating process. In experimental study, we have optimized electron-beam dosage for 100nm-scale optical grating patterns with 2.5-aspect ratio, and fabricated nickel stamper using above grating patterns as PR mold. Fabricated nickel stamper have showed height of 240$\pm$20nm and width of 116$\pm$6nm.

• 소성∙가공
• /
• 제20권1호
• /
• pp.23-28
• /
• 2011

For the fabrication of nano patterned products manufacturing a nano patterned mold is needed in advance. The nano patterned stamper was fabricated by electroforming the AAO master with nickel. The surface of nickel-plated stamper had nano-patterned holes with the diameter of 73 nm and the depth of 83 nm. Hot embossing was used for forming P3HT sheet and the process factors of hot embossing were closer as pressure, temperature and time. In the present paper hot embossing experiments were performed to find the main process conditions to affect the replication ratio of nano patterns on surface of P3HT sheet. As a result, main contributing factors for the replication ratio of hot embossed pattern could be sequentially enumerated as pressure, temperature and time.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.978-982
• /
• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• 한국정밀공학회지
• /
• 제23권9호
• /
• pp.174-178
• /
• 2006

Pyramid shape of micro pattern is applied to the light guide panel (LGP) to enhance the uniformity of the brightness of the LCD. The micro pyramids are molded in intaglio on the surface of the LGP. The size of each pyramid is 5$\mu$m $\times$ 5$\mu$m on bottom and the height is about 3.5$\mu$m. The pyramids are distributed on the LGP surface randomly to be sparser where the light comes in and denser at the opposite side as a result of a simulation using lightools$^{TM}$ Based on this design, a silicon pattern master and a nickel stamper are fabricated by MEMS process and electro plating process. Intaglio micro pyramids are fabricated on the 6' of silicon wafer from the anisotropic etching using KOH and the process time, temperature of the KOH solution, etc are optimized to obtain precise shape of the pattern. A Wi stamper is fabricated from this pattern master by electro plating process and the embossed pyramid patterns turns out to be well defined on the stamper. Adopting this stamper to the mold base with two cavities, 1.8' and 3.6' LGPs are injection molded.

• 한국산학기술학회논문지
• /
• 제10권1호
• /
• pp.186-193
• /
• 2009

본 논문에서는 전열(마이크로 히터, 센서)을 이용해 금형의 표면을 가열하는 E-MOLD 특허기술을 적용하여 휴대전화용 복합기능 도광판(Prismless LGP)을 제작하고, 전사성을 평가하였다. 이를 위하여 MEMS 공정을 이용하여 복합기능 도광판용 니켈 스탬퍼를 제작하였고, E-MOLD 기술의 핵심인 이동가열코어(movable heated core)가 설치된 금형을 설계, 제작하였다 이를 이용하여 성형조건 중 금형온도를 변화시키면서 복합기능 도광판을 사출성형으로 제조 하였고, 금형온도가 성형품의 전사성에 미치는 영향에 대하여 알아보았다. 또한, 전산모사 프로그램(CAE)을 이용하여 금형온도와 사출시간에 따른 수지의 유동성을 해석하였다. 금형온도에 따른 도광판의 전사성은 $100^{\circ}C$(25.0nm), $140^{\circ}C$(48.4nm), $180^{\circ}C$(52.1nm)로 나타났고, 스탬퍼(52.1nm)와 비교했을 때 $180^{\circ}C$에서 전사성이 가장 우수했다. 전산모사 해석결과에 따르면, 수지의 유동성은 금형온도($50{\sim}180^{\circ}C$)가 증가할수록 향상되었다. 사출시($1{\sim}2sec$)이 길수록 유동성이 감소하는 경향을 $160^{\circ}C$에서 확인하였다. 따라서 수지의 전사성과 유동성은 금형온도에 따라 증가하고, 특히 유리전이 온도($140^{\circ}C$) 이상에서 크게 상승하였다.