• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.105-105
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• 1999

차세대 기억소자에서는 집접도의 증가, 고속화, 그리고 미세화에 따라 배선간으 최소선폭이 작아지고, 새로운 다층 배선기술이 요구되는 가운데 층간절연막의 재료와 형성기술은 소자의 특성을 향상시켜주는 중요한 요소로서 열적안정성, 저유전율, 평탄화특성 등에 핵심을 두고 연구되고 있다. 본 연구에서는 5인치 p-Si(100) 위에 FTES와 O2를 precursor로 하고 carrier gas를 Ar gas하여 ICP CVD 방법으로 저유전율의 Fluorocarbonated-SiO2 박막을 형성하였다. 0.1-1kW, 13.56MHz인 rf power를 사용하였으며, 증착은 RT에서 5~10분으로 하였다. 형성된 박막은 FTIR(fourier transform infrared), XPS(x-ray photoelectron spectroscopy), 그리고 ellipsopsometer 등을 이용하여 결합모드와 F농도, 균일도 등을 측정하고, I-V와 C-V 측정장치, 그리고 SERM(scanning electrion microscopy) 등을 이용하여 유전상수, 누설전류, dielectric breakdown voltage, 그리고 박막의 stepcoverage를 측정하였다. 제작된 박막의 신뢰성은 열처리에 따른 전기적 특성으로부터 조사하였다. 형성된 fluorocarbonated 박막 결합모드는 Si-F, Si-O, O-C, C-C와 C-F였고 O2:FTES:Ar 유량을 1sccm:10sccm:6sccm으로 하여 증착한 시료에서 유전율은 2.8이었으며, 누설전류밀도는 8$\times$10-9A/cm2, Breakdown voltage는 10MV/cm 이상, 그리고 stepcoverage는 91%로 측정되었다.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.229-235
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• 1991

A new electrode material for $Ta_2O_5$ capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited $Ta_2O_5$ film on Si is due to the reduction of $Ta_2O_5$ by silicon at $Ta_2O_5$/electrode interface. $Dry-O_2$ anneal improves the electrical properties of $Ta_2O_5$ capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. $Ta_2O_5$ capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated $Ta_2O_5$ film on Si. No interfacial oxide layer at $Ta_2O_5$/TiN interface suggests that there\`s no Interaction between $Ta_2O_5$ and electrode. TiN is a adequate electrode material for $Ta_2O_5$ capacitor.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.401-405
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• 1994

The chemical composition and electrical properties were investigated for epitaxially crystallized $(Ba_{0.5}Sr_{0.5})Tio_3$ (BST) films deposited on Pt and $YBa_Cu_3O_{7-x}$(YBCO) electrodes by laser ablation technique. The crystalline quality of the heteroepitaxial BST films deposited on Pt bottom electrode was found to be better than that of BST film on YBCO electrode by the RBS analysis. Films deposited at $600^{\circ}C$ on Pt electrode showed a dielectric constant of 320 and a dissipation factor of 0.023 at 100kHz. Leakage current density of BST films on Pt electrode was smaller than that on YBCO bottom electrode. Their leakage current density was about 0.8$\mu \; A/ \textrm{cm}^2$ at an applied electric field of 0.15MV/cm.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.825-830
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• 1999

Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.696-702
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• 2002

The BST $({Bal-xSrxTiO_3})$ (50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively. The BST thin film annealed at $800^{\circ}C$ for 2 min has pure perovskite structure and good surface roughness of 16.1$\AA$. As the film thickness increases from 80 nm to 240 nm, the dielectric constant at 10 KHz increases from 199 to 265 and the leakage current density at 250 ㎸/cm decreases from $0.779 {\mu}A/{cm^2} to 0.184 {\mu}A/{cm^2}$. In the case of 240 nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5 fC/${{\mu}m^2} and 0.182 {\mu}A/{cm^2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.123.2-123.2
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• 2011

$ALU^+$ 태양전지는 PN접합을 후면에서 즉, Al을 소성하여 형성시키기 때문에 얼마나 균일하고 두껍게 형성하는 것이 가장 중요하다. 소성(Firing)은 태양전지 제조 과정에서 후면의 접촉을 위한 중요한 공정이다. 본 연구에서는 상업화가 가능한 n-type $ALU^+$ Emitter 태양전지에서 소성 횟수에 따른 특성을 연구 하였다. $ALU^+$ emitter 형성의 최적화를 위해 소성온도를 가변하고, 최적화된 온도에서 소성 횟수에 따른 DIV 측정을 통해 셀을 분석 하였다. 소성 횟수는 1~3회로 하였고, 그 결과 단락전류 밀도(Jsc)가 33.57mA/$cm^2$로 처음보다 15.1%증가 하였고, 곡선인자(Fill Factor)는 3회에서 66.04%로 218%증가 하였다. Al을 짧은 시간 안에 소성을 시키므로 해서 후면의 $P^+$ Emitter가 균일하게 형성되었기 때문에 개방전압(Voc)의 증가를 확인하였다. 본 연구를 통해 $ALU^+$ 태양전지의 후면 Aluminium 소성 조건의 최적화를 통하여 $ALU^+$ emitter가 충분히 형성되지 못하면 누설전류가 발생되고 직렬저항(Rs)이 크게 증가하여 개방전압(Voc) 및 단락전류밀도(Jsc)의 감소가 발생하게 되고, 직렬저항(Rs)의 증가와 병렬저항(Rsh)의 감소는 Fill Factor의 급격한 감소를 초래하게 됨을 알 수 있다. 이를 개선하면 태양전지 효율을 상승시키는 결과를 얻을 수 있음을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.464-470
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• 2004

The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.355-357
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• 1995

Pt(80nm)/$SiO_2$(150nm)/Si 기판위에 $Ba_{0.7}Sr_{0.3}TiO_3$ 박막을 rf-magnetron Sputtering 방법을 이용하여 기판온도 590$^{\circ}C$에서 33nm 두께를 증착했을 때 비유전율은 268 이었다. 비유전율이 3.9인 $SiO_2$와 비교했을 때 유효 두께인 Tox는 0.45nm 이었다. 누설 전류 밀도는 1.5V 전압을 인가했을 때 $4.21\times10^{-7}A/cm^2$이었다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2108-2109
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• 2008

매년 증가하고 있는 누전사고에 대한 대책수립을 위해 누전검출장치 및 누전조사작업을 시행하고 있지만, 대부분 전압변화 및 영상전류 및 z임피던스에 의한 계측이 주를 이루고 있다. 본 논문에서는 누전지역에서의 누설전류에 자속밀도 분포를 조사함으로 손쉬운 누전검출장비 개발 및 비접촉에 의한 누전검출장비 개발과 누전환경에서의 기초 연구자료를 제공하고자 정상선로에서의 자속밀도 분포 및 전압변화에 따른 자속밀도 분포를 조사하였다. 그 결과 정상도선에서는 거리변화에 따른 자속밀도가 감소하였으며, 이에 반해 침수된 누전지역에서는 자속밀도변화가 거의 없음을 확인할 수 있었으며, 전압 증가에 따라 누전지역의 전류값이 정상상태보다 더 크게 변화하는 것을 확인할 수 있었다.