• JOURNAL OF ELECTRICAL WORLD
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• no.9 s.93
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• pp.70-77
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• 1984

난연케이블, 난연$\cdot$저염산$\cdot$내방사선케이블은, 국민의 안전지향과 함께 발전$\cdot$철강제의 공업 플렌트, 일반건축물, 선박등에 적용되고 있으며 다시 적용범위가 확대될 경향에 있다. 이 신케이블의 개발의 배경, 개발의 수법, 특징 및 채택의 효과에 대해 개설한다

• Radioisotope journal
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• v.12 no.3
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• pp.38-42
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• 1997

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.778-781
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• 2012

The electronic element the damage occurs with radiation being bombed. In order applies in the artificial satellite or the space ship therefore from the within has radiation introspection the use of the radiation electronic element is essential. Transient radiation tests performed for the first time in Korea evaluation data database (DB) was constructed to. Web-based materials in the DB is designed to be able to search and update, and existing foreign (NASA, ESA) for a total of 695 species, including public sources of data has been entered. Search DB than the existing foreign DB is an efficient and practical.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.711-713
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• 2017

Fiber Brag grating sensors were written in standard Ge-doped telecom optical fiber (Corning SMF-28) using an 800nm femtosecond laser and a phase mask. It were exposed to gamma-radiation up to a dose of 100 kGy to evaluate the radiation effect. The fs-FBG-2 sensor showed incomplete optical characteristics during irradiation, but the fs-FBG-1 sensor showed excellent radiation resistance with Bragg wavelength shift(BWS) of less than 10pm at a dose of 100 kGy.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Proceedings of the Korean Nuclear Society Conference
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• 1999.05a
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• pp.370-370
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• 1999

• Rubber Technology
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• v.23 no.2
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• pp.136-144
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• 2022

• Nuclear industry
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• v.33 no.5
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• pp.98-99
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• 2013

발전소의 주요 구역과 시설을 계속적으로 모니터링 할 수 있는 내방사선 카메라 시스템은 그 중요성이 점점 커지고 있고, 전력 송출 중단 시간 (outage time)을 줄이고 작업자의 방사선 피폭량을 최소화하는 데에 기여할 것으로 원전 운영자들은 기대하고 있다.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.10a
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• pp.489-490
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• 2016

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1405-1410
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• 2015

In this study we designed the radiation-hardened sensor signal processing modules that can be commonly used for a variety of sensors during normal operation and even in high-radiation environments caused by an accident. First development module was designed to receive the change of the R and C value from the sensors and to process the signal as a PWM modulation scheme. This module was assessed to have ± 10% error to the Full-Scale in the radiation test in the range of 12 kGy TID. The main cause of the error was analyzed as the annealing of the common circuit in the switching element and the consequent increase in the duty ratio of the pulse width modulation circuit according to the radiation dose increasement. The redesigned module for higher radiation resistivity with Stub transistor circuit was found to have less than 5% error to the Full-scale from the radiation test results for 20.7 kGy TID range.