• 제목/요약/키워드: 나노 재료

검색결과 2,803건 처리시간 0.03초

적외선 영역에서의 HgTe 나노입자 광전류 특성 (Photocurrent characteristics of close-packed HgTe nanoparticles in the infrared-wavelength range)

  • 김현석;박병준;김진형;이준우;김동원;조경아;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.25-28
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    • 2004
  • Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

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금속 코팅을 통한 다양한 반도체/금속 나노선 제작 (Fabrication of Various Semiconductor/Metal Structured Nanowires Using Metal Coating)

  • 박병준;김경환;김현석;조경아;김진형;이준우;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.252-255
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    • 2004
  • Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

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Solvothermal 방법에 의한 $BaTiO_3$ 나노입자의 합성 (Synthesis of $BaTiO_3$ nanoparticle by a solvothermal method)

  • 여기호;문병기;손세모;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.732-734
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    • 2003
  • A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

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CdTe 나노입자를 이용한 광전류 특성 (Photocurrent Characteristic of CdTe nanoparticles)

  • 김진형;조경아;김현석;이준우;박병준;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.37-40
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    • 2004
  • CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Photocurrent of CdTe nanoparticles were observed in the structure of Al/CdTe/ITO that was fabricated by spin coating of CdTe nanoparticles. The wavelength dependence of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. This study suggests that CdTe nanoparticles are very prospective materials for optoelectronics.

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ZnO 나노 분말 바리스터의 전기적 특성 (Electrical Characteristics of ZnO Nano-Powder Varistors)

  • 소순진;임근영;김호걸;김종호;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.416-420
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    • 2004
  • Varistors based on M.Matsuoka were prepared from ZnO nanopowders, every one of which had bar type and about less 100nm length. The compact green disks were conventionally sintered in air for 2 hours at a temperature of $1050^{\circ}C$. The Varistors with nonlinear coefficient ${\alpha}=45$, leakage current $I_{\ell}=2{\times}10^{-7}A/cm^2$, operating voltage 9000v/cm, and average grain size $3{\mu}m$ were obtained. The advantages of the samples were due to greater structural homogenity, higher density, smaller grain size.

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실리콘 나노결정 박막에서 수소 패시베이션 효과 (Effect of hydrogen on the photoluminescence of Silicon nanocrystalline thin films)

  • 전경아;김종훈;김건희;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1033-1036
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    • 2004
  • Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

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다결정 다공질 실리콘 나노구조의 전계 방출 특성 (Field Emission properties of Porous Polycrystalline silicon Nano-Structure)

  • 이주원;김훈;박종원;이윤희;장진;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.69-72
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    • 2002
  • We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

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고전계 전기산화에 의한 나노다공성 알루미나 멤브레인의 제조 (Fabrication of Nanoporous Alumina Membrane by High- Field Anodization)

  • 김민우;현상철;하윤철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.45-45
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    • 2010
  • Nanoporous anodic alumina membranes (NAAM) with high aspect ratio, self-ordered pore array were fabricated by high-field 2-step anodization method. High voltages of 80, 100, 120 and 140 V as well as 40 V for comparison were applied to an aluminum anode with respect to a Pt cathode immersed both in 0.3M oxalic acid solution in order to investigate the self-ordering characteristics of the nanoporous structure. The pore structures, including interpore distance, pore size, pore density, and porosity as well as the ordering characteristic were analyzed using field-enhanced scanning electron microscopy (FE-SEM) and the corresponding Fourier-transformed images. The nanoporous structure could be produced for all the voltage conditions, but the well-ordered through-hole pore without a branched structure seemed to occur only at 40 and 140 V. It turned out that the growth rate under 140 V high-field anodization was about 40 times higher than under conventional 40 V mild anodization, which enabled the fast fabrication of self-ordered, high aspect ratio NAAMs.

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나노/마이크로 에폭시 복합체의 전기적, 열적특성 분석 (Analysis of electrical, thermal characteristic of Nano/Micro Epoxy composite)

  • 정의환;윤재훈;임기조;정수현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.99-99
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    • 2010
  • Polymer nanocomposite has been attracting much attention as a new insulation material, since homogeneous dispersion of nm-sized inorganic fillers can improve various properties significantly. In this paper, various kinds of epoxy based nanocomposites were made and AC breakdown strength of Nano-TiO2 and micro-silica filler mixture of epoxy based composites were studied by sphere to sphere electrode. Moreover, nano- and micro-filler combinations were adopted as an approach toward practical application of nanocomposite insulation materials. Nano-TiO2 particle size is about 10nm and composites ratio was resin (100) : hardener (82) : accelerator (1.5). AC breakdown test was performed at room temperature (25 [$^{\circ}C$], 80 [$^{\circ}C$] and 100 [$^{\circ}C$] in the vicinity of Tg (90[$^{\circ}C$]). And thermal conductivity were measured by ASTM-D5470.

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기판 및 공정조건에 따른 PS-b-PMMA 블락 공중합체의 나노패턴 형상 거동 (Behavior of Nano-patterns with PS-b-PMMA Block Copolymer by Substrates and Process Conditions)

  • 한광민;김준형;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.59-59
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    • 2010
  • 상변화 메모리 소자의 고집적화를 위한 새로운 패터닝 공정을 위하여 블락 공중합체의 자가 조립 특성을 적용한 고분자 패턴을 TiN기판 위에 적용화기 위한 연구를 진행하였다. 블락 공중합체의 자기 조립에 의한 패턴의 모양은 각 기판과 블락 공중합체간의 상호작용에 따라 sphere, cylinder, lamellar 형태의 모양을 띄게 된다. 표면처리가 안된 TiN기판 위의 PS-b-PMMA 블락 공중합체의 패턴의 형태는 cylinder와 lamellar 구조가 섞여 있는 구조로써 PS-r-PMMA 랜덤 공중합체로 기판 표면을 처리해 줄 경우 좀 더 균일한 cylinder 패턴 구조를 얻을 수 있었다. PS-r-PMMA로 기판 표면 처리 전 후의 상호 작용의 변화를 알아보기 위하여 물방울 접촉각 테스트를 하였으며 랜덤 공중합체와 블락 공중합체의 표면 처리 열처리 조건에 따른 패턴 행태의 변화를 관찰하기 위하여 모두 24,48,72시간으로 변화시켜 열처리 하였다. 최종 열처리 후 블락 공중합체의 패턴 형태의 주사 전자 현미경 관찰을 위하여 acetic acid에 60분 동안 침지시켜 PMMA를 제거 후 괄찰하였다.

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