• Title/Summary/Keyword: 나노구조 자기셀

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Thermal Stability of a Nanostructured Exchange-coupled Trilayer (나노구조 교환결합 삼층박막의 열적 안정성 예측)

  • Lee, Jong-Min;Lim, S.H.
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.75-82
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    • 2010
  • A recent progress on the prediction of the thermal stability of a nanostructured exchange-coupled trilayer is reviewed. An analytical/numerical combined method is used to calculate its magnetic energy barrier and hence the thermal stability parameter. An important feature of the method is the use of an analytical equation for the total energy that contains the magnetostatic fields. Under an assumption of the single domain state, the effective values of all the magnetostatic fields can be obtained by averaging their nonuniform values over the entire magnetic volume. In an equilibrium state, however, it is not easy to calculate the magnetostatic fields at the saddle point due to the absence of suitable methods of the accessing its magnetic configuration. This difficulty is overcome with the use of equations that link the magnetostatic fields at the saddle point and critical fields. Since the critical fields can readily be obtained by micromagnetic simulation, the present method should provide accurate results for the thermal stability of a nanostructured exchange-coupled trilayer.

The Fabrication and Magnetoresistance of Nanometer-sized Spin Device Driven by Current Perpendicular to the Plane (수직전류 인가형 나노 스핀소자의 제조 및 자기저항 특성)

  • Chun, M.G.;Lee, H.J.;Jeung, W.Y.;Kim, K.Y.;Kim, C.G.
    • Journal of the Korean Magnetics Society
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    • v.15 no.2
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    • pp.61-66
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    • 2005
  • In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

Study on the fabrication variable process for AAO which are uniform (균일한 AAO 제작을 위한 공정변수 연구)

  • Choo, Won-Il;Jung, Hyun-Young;Kim, Ja-Oll;Jung, Yong-Ho;Lee, Bong-Ju;Lee, Seung-Heun;Kwon, Sung-Ku
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.271-271
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    • 2009
  • AAO(Anodic Aluminum Oxide)는 전형적인 자기정렬 되는 물질로 이루어진 나노 다공성 구조이며 많은 나노 기술적으로 응용이 되고 있다. 양극산화 알루미나 기술은 간단한 공정으로 경제적이며 규칙적인 배열의 나노 크기의 육각형의 셀 형태의 hole구조를 형성할 수 있는 장점을 가지고 있다. 이런 나노 다공성 구조는 나노 단위의 물질을 형성하는 Template로 유용하게 쓰인다. 균일한 대면적 AAO의 형성을 위한 공정 step의 개선, 공정변수의 영향에 대하여 연구 중이며 공정변수의 조절에 따라 hole의 직경, 길이, 균일성을 제어 가능하며 제작된 AAO의 특성은 FE-SEM, AFM을 이용하여 분석한다.

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Design of XOR Gate Based on QCA Universal Gate Using Rotated Cell (회전된 셀을 이용한 QCA 유니버셜 게이트 기반의 XOR 게이트 설계)

  • Lee, Jin-Seong;Jeon, Jun-Cheol
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.7 no.3
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    • pp.301-310
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    • 2017
  • Quantum-dot cellular automata(QCA) is an alternative technology for implementing various computation, high performance, and low power consumption digital circuits at nano scale. In this paper, we propose a new universal gate in QCA. By using the universal gate, we propose a novel XOR gate which is reduced time/hardware complexity. The universal gate can be used to construct all other basic logic gates. Meanwhile, the proposed universal gate is designed by basic cells and a rotated cell. The rotated cell of the proposed universal gate is located at the central of 3-input majority gate structure. In this paper, we propose an XOR gate using three universal gates, although more than five 3-input majority gates are used to design an XOR gate using the 3-input majority gate. The proposed XOR gate is superior to the conventional XOR gate in terms of the total area and the consumed clock because the number of gates are reduced.