• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.193-204
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• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.