• Geophysics and Geophysical Exploration
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• v.18 no.3
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• pp.105-114
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• 2015

A long-term resistivity monitoring system has been developed for saturated cores in room temperature and humidity condition. A 3-channel water-pump continuously drops the water onto the top of saturated core sample surrounded by shrinkable tube as well as on the paper filters of the electrodes at both sides of the core sample, by which one can monitor the resistivity changes with maintaining full saturation of the rock core for a week or longer. Monitoring the resistivity changes has been performed with 3 kinds of rock samples including biotite gneiss, andesitic tuff, and shale for 9 days using the system. Consequently, it is proposed two hypothesis that conversion speed of temperature coefficient has close relation to the thermal properties of the rock sample and that the ratio of resistance between dry and saturated conditions for a rock sample can be related to the effective porosity of the sample. The ratio between dry and saturated resistance for the three rock types are 48, 705, and 2, while effective porosity was 3.7%, 3.3%, and 13.0%, respectively.

• Journal of the Korean GEO-environmental Society
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• v.19 no.10
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• pp.5-11
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• 2018

The PBD (Plastic Board Drain) method is one of effective ground improvement methods on the soft dredging reclamation ground. This method has outstanding economic efficiency and constructability, and it is widely used for the soft ground improvement. However, the PBD method reduces permeability and drainage capacity of the ground due to the long construction period. Therefore, the nano coated Plastic drain board (PDB) was developed to solve problems. It is the non-metallic electrode and improves the weakness of the PBD method by using electric force of the electro-osmosis method. Various researches have been conducted to apply the nano coated PDB, but these researches were limited to model tests in laboratory. In this study, model and field tests were conducted to assess field applicability of the nano coated PDB. The result showed that the nano coated PDB had the better effect on the ground improvement compared to the normal PDB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.31-36
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• 2004

In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.9-14
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• 2011

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.38-43
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• 2003

Fabrication process of strain-induced channel waveguides in $LiNbO_3$ was developed using strain-optic effect and compressional strain due to ~1.4 $\mu\textrm{m}$ surface Mo/Pt metal film. Characterization of the channel waveguides revealed a single transverse and depth mode in both TE and TM polarizations. Measurements showed total insertion loss of 6.2 and 7.7 ㏈/cm for TM and TE polarizations. respectively. Electro-optic intensity modulators with 11 mm long electrode length and 21 $\mu\textrm{m}$ electrode gap at $\lambda$ = 1.15 ${\mu}{\textrm}{m}$have been produced in $LiNbO_3$ substrates using strain-induced channel waveguides. Modulation depth of 100% at $\pi$-radian voltage of 16.1V has been demonstrated. Also, 1$\times$2 on/off power splitters at $\lambda$ = 0.63 $\mu\textrm{m}$ have been produced using strain-induced channel waveguides. On/off voltage of $\pm$ 25V has been demonstrated.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.213-213
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• 1999

현재 LCD용 기판재료는 ITO/glass를 전극으로 사용하고 있다. 그러나 유리기판은 무겁고 깨지기 쉽기 때문에 사용상 곤란한 점이 많다. 최근 flexible하고 가공성 및 생산성이 우수한 플라스틱한 ITO를 성막하여 EL용, Touch panel, plastic LCD용 사용하려는 시도로, roll-to-roll 연속 스퍼터링에 의한 ITO성막공정에 대한 연구가 최근 활발하게 이루어지고 있다. 폴리머는 유리에 비해 Tg 온도가 낮고, 기판으로부터의 수분 및 여러 종류의 가스방출이 심하기 때문에 유리와는 달리 ITO막의 제조에 있어 큰 차이점이 있다. 따라서, 폴리머에 반응성 스퍼터링을 하기 위해서는 표면처리가 중요한 변수가 되며, roll to roll sputter로 ITO 필름을 얻기 위해서는 폭과 길이 방향으로 균일한 막을 얻는 것이 중요하다. 두께 75$\mu\textrm{m}$, 폭 190mm, 길이 400m로 권취된 광학용 Polyethylene terephthalate(PET:Tg:8$0^{\circ}C$)위에 In-10%Sn의 합금타겟과 Unipolar pulsed DC power supply를 사용하여 반응성 마그네트론 스퍼터링 방법으로 0.2m/min의 속도로 연속 스퍼터링 하였다. PET를 Ar/O2 혼합가스로 플라즈마 전처리를 한 후, AFM, XPS를 이용하여 효과를 분석을 하였고, 성막전에 가스방출을 막기 위해 TiO를 코팅하였다. Pilot 연속 생산공정에서 재현성을 위해 PEM(Plasma Emission Monitor)의 optical emission spectroscopy를 이용, 금속과 산화물의 천이구역에서 sprtter된 I/Sn 이온과 산소 이온의 반응에 의한 최적의 플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.165-170
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• 2004

MLCC의 주재료인 $BaTiO_3$는 금속전극의 산화를 방지하기 위해 환원분위기에서 소결하는데 이는 비화학양론적 조성 및 전기적 성질, 결함 그리고 상의 변화를 가져온다. 본 연구에서는 상의 변화를 다양한 온도 범위에서 BaO 또는 $TiO_2$를 첨가시킨 $BaTiO_3$ powder을 가지고 급냉시킨 후 이를 X-선 회절 분석을 통하여 이들의 이차상 형성 여부 등을 조사하였다. $1320^{\circ}C$에서는 $TiO_2$의 고용도가 BaO의 고용도에 비해 상당히 큰 값을 가짐을 알 수 있었다. 이런 결과를 바탕으로 Ba/Ti 비, 산소분압 및 온도에 따른 $BaTiO_3$의 전기전도도 거동에 의하면, 고용범위내에서 BaO 첨가량이 증가할수록 전기전도도의 최소점은 낮은 산소분압쪽으로 이동함을 관찰하였으며 이는 $Ti^{4+}$빈자리에 따른 산소빈자리가 형성되는 결함 모델로 설명되어진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.2-218.2
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• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.825-830
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• 1999

Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.