• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.215-215
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• 2012

Sillicon Wafer는 순도 99.9999999%의 단결정 규소를 사용하여 만들어진다. 웨이퍼의 표면은 결함이나 오염이 없어야 하고 회로의 정밀도에 영향을 미치기 때문에 고도의 평탄도와 정밀도를 요구한다. 특히 실리콘의 순도는 효율성에 영향을 주는 주요 원인으로 금속의 오염은 실리콘 웨이퍼의 수명을 단축시켜 효율성을 떨어뜨린다. 표면에 흡착된 구리와 니켈은 Silicon 오염의 주요인 중 하나로 알려져 있다. 이 연구는 Silicon Wafer 표면에 흡착된 구리가 내부로 확산되는 메커니즘을 규명하는 것을 목표로 한다. 표면에 구리가 흡착된 상태는 AES 및 LEED로 관찰하였다. 표면에 흡착된 구리의 표면(수평)및 내부(수직)확산은 SIMS를 이용하여 연구하였다.

• Journal of the Korean Society of Radiology
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• v.11 no.6
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• pp.459-466
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• 2017

The purpose of this study was to evaluate the difference of dose and image quality according to the material of the additional filter plate by selecting copper and nickel. First, the absorbed dose was measured using a Rando phantom setting the additional filter plates of copper and nickel None, 0.1 mm, 0.2 mm, and 0.3 mm under 120 kVp, and 6.3 mAs. Second, We acquired image according to filter thickness of copper and nickel. by changing the tube voltage of 90 kVp, 100 kVp, 110 kVp, 120 kVp and exposure indexes of 400, 800 and 1600. Third, we obtained the SNR and CNR values using the Image J program and evaluated quantitatively and then evaluated image quality. As a result, Absorbed dose measurements showed that nickel was higher than copper, and the absorbed dose decreased as the thickness increased(p<0.05). Furthermore, Quantitative analysis of images showed no significant difference between the two images according to change the voltage and the exposure index(p>0.05). In conclusion, this study confirms that the nickel addition plate can maintain the current image quality while reducing the exposure dose compared to copper.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Journal of the Korean institute of surface engineering
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• v.15 no.3
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• pp.179-184
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• 1982

• 한국전기화학회:학술대회논문집
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• 1998.10a
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• pp.52-52
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• 1998

• Proceedings of the KSCN Conference
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• 1999.11a
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• pp.655.2-656
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• 1999

• Resources Recycling
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• v.11 no.6
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• pp.12-17
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• 2002

Solvent extraction experiments have been performed to separate copper from $CuCl_2$-$NiCl_2$-$CoCl_2$$ solutions using Alamine336 and LIX84. The complex formation tendency between metal ions and chloride ion had a great effect on the distribution coefficients of Cu, Co and Ni ions and separation factor of Cu to Co and Ni. In the experimental ranges of chloride ion concentration from 0.5 to 4.0 M, LIX84 was superior to Alamine336 in separating copper from cobalt. When the volume percentage of LIX84 and Alamine336 was varied from 5 to 40%, LIX84 was more effective than Alamine336 in separating Cu from Co and Ni in solutions in which the chloride ion concentration was 1.0 M.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.224-228
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• 2014

Recently, the demands for separation/recovery of valuable metals such as nickel or tin from copper based alloys has been attracting much attention from the viewpoints of environmental protection and resource utilization. In this report, experimental results on concentration increasement of nickel and tin compared to the previous report are investigated. Ni is successfully separated by a organic solvent and reduced to the metal powder whose concentration is over 98 %. Sn is separated by a selective solution method and its concentration is increased to 97.5 % by three consecutive solution and reduction process. Crystal structure, surface morphology and microstructure of the separated samples are studied.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.137-138
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• 2011

구리 이온은 -0.40V (vs. SCE)에서 전기화학적 환원이 일어나는 반면, 니켈 이온은 -1.19V (vs. SCE)에서 전착이 발생한다. 따라서, 단일 도금욕조 내에서 Ni-Cu 합금도금층을 제조하기 위해서는 두 금속 이온종 간의 전위차를 줄여주어야 하는데, 이를 위해 본 연구에서는 $Na_3C_6H_5O_7{\cdot}2H_2O$를 착화제로 사용하였다. 다양한 Ni-Cu 합금 도금층의 조성을 얻기 위하여 기본 도금욕 내 황산니켈과 황산구리의 비율을 10:1로 설정하였다. 도금 공정 조건에 따른 합금 도금층 조성 변화를 관찰하기 위하여 도금액 pH와 교반 속도에 따른 도금층 조성 변화를 분석하였으며, 도금액의 UV-VIS과 도금층의 XRD 와 SEM 측정을 통하여 도금욕과 도금층 간의 상관 관계를 유추하였다. 본 도금액에 사용된 $Na_3C_6H_5O_7{\cdot}2H_2O$ 착화제의 효과는 pH3에서 가장 현저하였으며, pH 변화 및 교반 속도 변화를 이용하여 다양한 합금 조성을 얻을 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.878-881
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• 2006

In this paper, the luminance and resistance from different electrode materials of external electrode fluorescent lamp are measured and analyzed. New materials and process technology of external electrode are very important for the developed characteristics in lamp fabrication. In this experiments, three different types for the forming of external electrode are Cu and Al taping, silver paste, Ni and Cu electrode-less plating methods. In the measurements of luminance, the results of brightness by Ni and Au plating methods for the external electrode on lamp glass are presented and also compared with the results by the methods using different electrode materials. The measured resistance values of Ni and Au plating process showed a little bit higher than that of silver paste process in spite of developed results of brightness. But the Ni and Ni/Au plating processes are demonstrated best results and are also showed a little bit different brightness due to different previous sulfate etching treatments.