• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 공업화학
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• 제33권1호
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• pp.11-16
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• 2022

금속유기골격체(metal-organic frameworks, MOFs)는 나노사이즈의 기공을 가진 다공성 물질로, 금속이온과 유기리간드의 종류에 따라 기체흡착도 및 기공크기의 조절이 가능하다. 이러한 장점을 이용하여, 기체 포집 및 분리, 그리고 기체센서분야에서 금속유기골격체에 대한 연구가 많이 이루어지고 있다. 신속하고, 정량적인 기체 흡탈착 분석을 위해서는, 센서 표면에 균일한 필름 형태의 다양한 MOF 구조체를 형성해야 한다. 본 총설논문에서는 양극산화알루미늄, 산화아연 나노막대, 구리 박막으로부터 직접합성법을 이용하여 각각 MIL-53 (Al), ZIF-8, Cu-BDC와 같은 MOF를 마이크로진동자 센서 표면에 균일하게 합성하는 방법에 대해 정리하였다. 또한, 대표적인 마이크로진동자인 수정진동자미세저울과 마이크로캔틸레버의 작동원리와 금속유기골격체에 기체흡착 시 변하는 신호해석에 대한 내용을 다룬다. 이를 통해, 마이크로진동자 기반 금속유기골격체의 기체 흡탈착 분석에 대한 이해를 높이고자 한다.