• Resources Recycling
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• v.33 no.4
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• pp.22-28
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• 2024

Waste PCBs contain a large amount of valuable resources, including copper, and technology to recover them is constantly being developed. Generally, to recycle waste PCBs, a physical pretreatment process such as shredding and crushing is required. However, during this stage, the loss rate of metals is high and the sorting efficiency is low, indicating a need for a more efficient recycling pretreatment process. In this study, a high-temperature milling process, which simultaneously employs heat treatment and ball milling, was utilized to efficiently recover copper from waste PCBs. An experiment was conducted at 350 ℃ with milling time, milling speed, and the weight of the balls as variables. The results showed a copper recovery rate of over 90% under the conditions of a ball weight of 500 g, a milling speed of 70 RPM, and a milling time of 5 hours. The purity of the recovered copper was approximately 93%, and through post-processing after the high-temperature milling process, the feasibility of reusing the recovered copper as a high-purity material was confirmed.

• Journal of Energy Engineering
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• v.5 no.2
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• pp.108-114
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• 1996

It is one of the most important factors to enhance the efficiency of the solar collectors by in-creasing collecting efficiency and decreasing heat loss. The pulse electrodeposition method has been involved in this study to improve characteristics of the solar selective coating on 230cm${\times}$60cm substrates and electrical efficiency of the process. The composition of the electrolyte was 280 g/$\ell$ chromic acid, 15 g/$\ell$ propionic acid, and 10 g/$\ell$ appropriate additive. 230cm${\times}$60cm copper and aluminium sheets were utilized as the substrates. It has been observed that the black chrome coatings exhibited reasonable optical properties for commercialization when the plating parameters were properly controlled; the absorptance was 0.98 and 0.97 and omittance was 0.17 and 0.23 for copper and aluminium substrate, respectively. This study implies that the pulse current electrolysis method could be applied to the large scale substrates, and the various products can be avilable after the consideration of the thermal conductivity, heat transfer efficiency and cost problems of the substrates.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.88-88
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• 2003

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.69-74
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• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.21-25
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• 2015

Bending fatigue characteristics of Cu films and $8{\mu}m$ width Cu interconnects on flexible substrates were investigated, and fatigue reliability improvement was achieved through Mo-Ti alloy adhesion layer. Tensile bending fatigue reliability of Cu interconnects is 3 times lower than that of Cu films, and even compressive bending fatigue reliability of Cu interconnects is 6 times lower than that of Cu films. From these results, mechanical crack formation could be fatal in Cu interconnects. With Mo-Ti adhesion layer, fatigue reliability of Cu films and interconnects were enhanced due to the increase of adhesion strength and the suppression of slip induced crack initiation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.205-205
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• 2013

플라즈마 밀도, 전자 온도, 쉬스 전압이 플라즈마 디웨팅으로 나노 분말 어레이를 제작할 때에 끼치는 영향을 연구하였다. 플라즈마 변수를 조절하여 기판에 입사하는 이온 충돌 에너지가 높은 조건에서는 디웨팅 시에 홀이 상대적으로 많이 생성이 되어 균일한 구리 나노 분말이 생성되었고, 반대의 경우에는 디웨팅 시 홀이 적게 생성되어 크고 작은 나노분말이 혼재해 있는 불균일한 구리 나노 분말 어레이가 형성되었다. 따라서 이온 충돌 에너지를 조절하면 구리 나노 분말의 균일도를 조절할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.101-105
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• 1990

The use of a sol-gel processed cordierite precursor sinterable about$900^{\circ}C$ allows cosintering of the copper and the ceramic. A strong bonding between the copper film and the cordierite substrate can be achieved through an eutectic bonding technique. These interfaces were investigated using STEM. copper diffusion as well as strong chemical and structural modifications was observed in the interface region. Although these interfaces have good adhesion properties, there was no evidence of the formation of the copper compound at the interface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.89.1-89.1
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• 2012

실리콘 반도체의 Ultra large scale integration (ULSI) 기술 및 소자의 나노스케일화에 따라 배선 금속 물질로 사용하던 알루미늄 보다 낮은 비저항을 가지면서 금속의 전자이동효과에 잘 견딜 수 있는 차세대 배선 물질로서 구리가 큰 주목을 받고 있다. 하지만 구리의 경우, 높은 확산성을 가지기 때문에 열처리 과정에서 구리 실리사이드가 형성되는 등 소자의 신뢰성 및 성능을 감소시키므로, 이를 방지하기 위한 확산 방지막이 필요하다. IC의 배선에서 사용되는 기존의 확산 방지막은 Ta, TaN, TiN, TiW, TaSiN 등으로, 대부분 금속으로 이루어져 있기 때문에 증착 장비를 이용하여 두께를 조절하는 기술, 박막의 질을 최적화 하는 과정이 필요하며, 증착 과정 중에서 불순물이 함께 증착되거나 실리사이드가 형성되는 등의 단점을 가진다. 구리 기반의 배선 물질에서 문제될 수 있는 또 한가지의 이슈는 소자의 나노스케일화에 따른 배선 선폭의 감소로 인하여 확산 방지막 두께 또한 감소되어야 하는 것으로서, 확산 방지막의 두께가 감소함에 따른 방지막의 균일성 감소, 연속성 등이 큰 문제로 작용할 수 있어 이를 해결하기 위한 새로운 기술 또는 새로운 확산 방지막 물질의 개발이 시급한 실정이다. 본 연구에서는 구리/실리콘 구조에서 금속의 실리콘 박막 내로의 확산 및 실리사이드 형성을 방지하기 위하여 그래핀을 확산 보호막으로서 사용하였다. 그래핀은 화학기상증착법을 이용하여 한 겹에서 수 겹으로 성장되었으며, PMMA 물질을 이용하여 실리콘 기판에 전사되었다. 구리/그래핀/실리콘 구조의 샘플을 500 ~ 800도의 온도 범위에서 열처리 하였고, 구리 실리사이드 형성 여부를 XRD로 분석하였다. 또한 TEM 분석을 통해 구리 실리사이드의 형성 모양을 관측하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.89-90
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• 1996

• Journal of the Microelectronics and Packaging Society
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• v.3 no.2
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• pp.17-26
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• 1996