• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.1
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.50-53
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• 2004

본 논문에서는 Si wafer와 Cu사이의 밀착력을 증가시키기 위해 Si wafer전처리 후 plasma와 SAMs처리 방법에 의한 Cu도금의 형성에 관한 방법을 설명하였다. Si wafer를 Piranha solution과 $0.5\%$ HF처리 후 유기박막인 SAMs과 plasma를 이용하는 방법으로 wafer와 Cu층 사이의 밀착력을 증가시켰다. 도금층의 밀착력은 scratch test 로 측정하였으며, AEM을 이용해 시편에 형성된 패턴의 형태를 관찰하고 SEM과 EDS를 이용해 시편의 조직을 관찰하였다. 그 결과 Si wafer를 O2, He, SAMs를 혼합처리 했을 때 밀착성이 가장 우수하였다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1311-1312
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• 2007

본 논문에서는 YBCO coated conductor(CC) 의 접합연구와 접합된 선재의 응용을 위한 특성연구를 수행하였다. 최근에 지속적으로 연구 개발되어 본격적으로 응용이 시작되는 CC는 기본적으로 높은 인덱스 값과 자기장에 대한 임계전류의 균일성 등 다른 고온초전도에 비해 좋은 특성을 갖고 있으며 따라서 미래의 초전도 기기에 광범위하게 사용될 것으로 예상된다. CC와 같은 초전도 선재가 초전도 기기에 적용되는 경우 대부분 초전도 선재와 초전도 사이의 접합, 초전도 선재와 상전도체 사이의 접합 등의 접합들이 존재하게 된다. 접합을 위해서는 접합 땜납이 들어가게 되고 이 부분에서 저항이 발생하게 되어 손실이 발생하게 된다. 이러한 손실은 저항이 '0'이어서 손실이 적다는 초전도기기의 장점을 떨어뜨리는 요인이 될 수 있다. 따라서 CC의 접합 특성을 연구 하는 것은 초전도 기기의 성능향상에 도움을 줄 수도 있는 요인이 될 수 있다. 이 논문에서는 구리 안정화층, YBCO 층, 완충층과 기판층으로 이루어진 YBCO CC 선재를 이용하여 두 가지의 접합 방법을 이용하여 접합특성을 연구하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.5
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• pp.458-461
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• 2004

In order to improve the adhesion properties of copper, MPS(3-mercaptopropyltrimethoxysilane) organic film were employed. The plasma pretreatment in pure He or $He/O_{2}$ mixed gas environment greatly increased adhesion force. Adhesion force was measured by scratch test with nano indenter. Microstructures and surface roughness were observed with scanning electron microscope(SEM). The characteristics of MPS layer for pretreatment were studied with flourier transform infrared spectroscope(FT-IR) and contact angle tester. The heighest adhesion was achieved in the specimen pretreated with mixed plasma and NPS coating, which was 56mN. Other specimen showed lower value by $20{\%}$ to $30{\%}$. The roughness of substrate was not affected by the bonding strength of copper plating.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.466-473
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• 2009

Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.131-131
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• 2016

기원전 5000년 이집트에서부터 시작된 도금은 시간이 지남에 따라 점점 발전하여, 1900년대에 들어 전기를 이용한 도금공정이 개발되었고, 현재 뿌리산업으로써 각종 제조업에 널리 이용되고 있다. 도금 공정은 금속을 부식으로부터 보호하고, 제품의 심미성과 기능성, 생산성 등을 높이기 위해 주로 이용된다. 전주도금 공정은 완벽하게 동일한 형태의 생산품을 다량으로 제작 할 수 있기 때문에, 그 높은 생산성으로 주목 받고 있다. 특히, 나노/마이크로 크기의 정밀 소자 등을 가공하는 차세대 기술인 LIGA공정과 접목이 가능하다는 장점이 있다. 몰드를 이용하여 복제하는 방식인 전주 도금은 도금공정이 끝난 후 몰드와 완성된 제품을 분리해내는 추가공정이 필연적으로 발생하게 되는데, 둘 사이의 접착력을 낮추기 위하여 몰드의 표면에 이형박리제를 도포하게 된다. 이형박리제로는 전기가 잘 흐르면서 접착력이 낮은 이산화 셀렌이나 중크롬산이 주로 이용되지만, 원활한 박리를 위해서는 그 두께가 30 um 이상 확보되어야 하기 때문에 정밀한 미세구조 전주도금이 어렵다는 문제점이 있다. 또한 이와 같은 화학 약품들은 매우 유독하기 때문에 추가적인 폐수 처리 공정이 필요하며, 작업자의 안전을 위협하고 심각한 환경 오염을 초래한다는 추가적인 문제가 발생한다. 따라서, 매우 얇고 친 환경적이며 안전한 전주도금 이형박리제에 대한 연구가 요구되고 있다. 본 연구에서는 전주도금 몰드로 사용한 구리의 표면에 TCVD를 이용하여 단일 층 그래핀을 성장시킨 후, 그래핀이 코팅된 몰드에 구리를 전주도금하여 박리하였다. 박리 후 그래핀은 몰드에 손상 없이 남아있는 것을 Raman microscopy를 통해서 확인하였고, 몰드와 그래핀 사이의 접착력 (약 $0.71J/m^2$)에 비해 그래핀과 전주도금 샘플간에 낮은 접착력 (약 $0.52J/m^2$)을 갖는 것을 확인하였다. 이와 같이 낮은 접착력을 통해 박리 시 표면구조의 손상 없이 정밀한 구조의 미세 패턴구조를 형성할 수 있었다. 전주도금을 이용한 전극 형성과 고분자와의 융합을 통해 유연기판을 제작하여 bending 실험을 진행하였다. $90^{\circ}$의 bending 각도로 10000회 이하에서는 저항의 변화가 없었고, LED chip을 mounting한 후 곡률반경 4.5 mm까지 bending을 진행하여도 이상 없이 LED가 발광하는 것을 확인하였다. 위와 같은 전주도금 공정을 이용하여 고집적 전자기기, 광학기기, 센서기기 등의 다양한 어플리케이션의 부품제조에 활용될 수 있을 것으로 기대한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.163-169
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• 2016

In this paper, we miniaturized the loop and coil in magnetic resonance wireless power transfer(MR-WPT) system for application to the small mobile device. The proposed disk type double coil resonator was designed to cause resonance at 6.87 MHz. It is composed of thin copper on both-side of acrylic substrate structured 2 mm width, 1 mm pitch and 8 turns. The outer radius of spiral coil pattern is 9 cm. And the proposed loop was made of the copper wire 5 mm diameter of cross-section. The size of loop is 10 cm diameter. For resonance at 6.87 MHz, the capacitor with 3,300 pF was connected in series on the loop. We rearranged the resonators and organized several WPT systems which is rearranged by resonators. The highest transfer efficiency of miniaturized WPT system was 35.67 %. This proposed design of spiral double coil will contribute to make resonator smaller for appling small and thin mobile device.

• Resources Recycling
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• v.25 no.1
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• pp.3-9
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• 2016

The leaching behavior of gold from waste CPU chip using Iodide/Iodine solution was studied. The direct leaching of gold with Iodide/Iodine solution for CPU chip under the size of 150 mesh showed leaching ratio of 20%. It was assumed that the copper film was produced on the gold particle during grinding process and the copper film prevents lodine/Iodide solution from contacting with leachable gold. Meanwhile, the extraction of gold was improved to 90% by pretreatment process with $HNO_3$ solution. In order to explain the result, EDS and ICP analysis for the leaching residue were conducted. It was found that the copper coated on the surface of the gold particle was removed about 80% by $HNO_3$, resulting in the increment of gold leaching rate.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.630-635
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• 2022

Copper(II) oxide (CuO), electroless plated on a nitrogen-containing carbon sponge prepared by a melamine sponge thermal treatment, was developed as a nitric oxide (NO) gas sensor that operates without a wafer. The CuO content on the surface of the carbon sponge increased as the plating time increased, but the content of nitrogen known to induce NO gas adsorption decreased. The untreated carbon sponge showed a maximum resistance change (5.0%) at 18 min. On the other hand, the CuO plated sample (CuO30s-CS) showed a maximum resistance change of 18.3% in 8 min. It is considered that the improvement of the NO gas sensing capability was caused by the increase in hole carriers of the carbon sponge and improved movement of electrons due to CuO. However, the NO gas detection resistance of the CuO electroless plated carbon sponge for 60 s decreased to 1.9%. It is considered that the surface of the carbon sponge was completely plated with CuO, resulting in a decrease in the NO gas adsorption capacity and resistance change. Thus, CuO-plated carbon sponge can be used as an effective NO gas sensor because it has fast and excellent resistance change properties, but CuO should not be completely plated on the surface of the carbon sponge.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.