• Journal of Chest Surgery
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• v.42 no.3
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• pp.371-374
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• 2009

A 36-year-old woman with a history of spontaneous abortion and photosensitivity was admitted to our hospital with periumbilical pain and lower extremity edema. The preoperative CT scan revealed massive inferior vena cava thrombus, which extended from the suprarenal portion of the vena cava to the hepatic vein. The laboratory data showed an elevated level of anticardiolipin antibody, which suggested the diagnosis of antiphospholipid syndrome. After medical management, she underwent an operation for removal of an vena cava thrombus by performing cavectomy and thrombectomy. After the operation, she has been taking oral anticoagulation and she is doing quite well at 9 months after her operation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.47-54
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• 2020

To develop the bright-vivid red- and yellow-inorganic fluorescent pigments with high luminescence properties, A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were synthesized by a water assisted solid state reaction (WASSR) method and a conventional solid state reaction method. Although impurity peaks corresponding to the AVO₃ and AV₃O₈ (A = K, Rb, and Cs) were observed in all samples prepared, the trigonal structure A₃V₅O₁₄ (A = K and Rb) and orthorhombic structure Cs₂V₄O₁₁ were successfully obtained as a main phase. These inorganic pigments showed the broad absorption band (under 550 nm) originated from CT transitions of VO₄ polyhedron, and the strong broad red- and green-emission bands due to ³T₂ → ¹A₁ and ³T₁ → ¹A₁ transitions of the [VO₄]^3- group. The A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ pigments showed a bright-vivid red- and yellow-body color, where the a* values of the A₃V₅O₁₄ (A = K and Rb) were +35.5 and +45.9, respectively, and b* value of Cs₂V₄O₁₁ pigments was +50.3. The L* values of the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were over +45. These results indicate that the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments could be an attractive candidate as a bright-vivid red- and yellow inorganic pigments.

• Journal of the Mineralogical Society of Korea
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• v.23 no.4
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• pp.377-393
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• 2010

Pumiceous tuffs occurring in the Beomgockri Group are examined applied-mineralogical characteristics and their controling factors to evaluate their potentials as the adsorption-functional mineral resources. The pumiceous tuffs are diagenetically altered to low-grade zeolitcs and bentonites in the Janggi area. Compositional specialty due to the presence of pumice fragments induces the altered tuffs to exhibit the characteristic adsorption property combined with cation exchange capacity, specific surface area, and acidic pH. Unusual lower pH in the adsorption-functional mineral substances is turned out to be originated from the presence of H-smectite having $H^+$ in the interlayer site of the sheet structure. On account of disordered crystallinity resulting from the exchanged $H^+$ in the interlayer site, the smectite commonly forms crenulated edges in the planar crystal form and exhibits characteristic X-ray diffraction patterns showing comparatively lower intensities of basal spacings including (001) peak than conventional Ca-smectite. Based on the interpretation of paragenetic relations and precursor of the H-smectite, a genetic model of the peculiar clay mineral was proposed. The smectite formation may be facilitated resulting from the precipitation of opal-CT at decreasing pH condition caused by the release of H+ during diagenetic alteration of pumice fragments. Because of the acidic smectite, the low-grade mineral resources from the Beomgockri Group may be applicable to the adsorption industry as the raw materials of acid clays and bed-soil.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.