• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05b
• /
• pp.807-809
• /
• 2004

본 논문에서는 광 부호분할다중접속(OCDMA) 시스템 구현을 위해 각 가입자의 시간ㆍ파장영역의 2차원 부호할당 및 변경이 가능하고 다중 사용자의 암호화된 데이터의 동시 전송과 모든 수신 노드에서 복원이 가능한 OCDMA 시스템 구조를 제안하였다. 또한 기존의 이중 광 하드리미터를 제한증폭기와 AND 게이트를 사용하여 이중 전기 하드리미터를 구현하였다. 서로 다른 파장을 갖는 레이저 다이오드와 FPGA를 이용한 전기 상관기로서 시간과 파장영역의 2차원으로 부호 다중화된 동시 가입자 신호에서 특정 가입자의 신호를 복원하였고, 제한 검출기와 위치 검출기의 이중 전기 하드리미터를 이용하여 MAI로 인한 기존 OCDMA 시스템에서의 식별력 저하와 비트오류 문제를 해결하였다.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.7A
• /
• pp.705-711
• /
• 2004

We propose novel OCDMA system with the structure of reconfigurable may encoder/decoder(RAE/ RAD), which are able to reallocate the 2-D optical codes to each subscriber and recover the transmitted data at all the receiving nodes. We have first implemented the double hard limiters composed of limiting amplifier(first hard limiter) that maintain a level of the encoded data from receiving node and AND detector(second hard limiter) for detecting the position of the encoded data and recovering the data. With the proposed system, it was successfully implemented to recover a specific channel data out of 16 code-multiplxed channels using FPGA and 4 DFB-LDs having distinct wavelengths. From experimental results, the code length resulted from increasing the number of the simultaneously connected channels has been reduced by using 2-D OCDMA multiplexed in time and wavelength instead of 1-D OCDMA. In addition, bit errors phenomenon on account of deterioration of autocorrelation peak-to-side lobe ratio is enhanced by using the double hard limiters composed of AND detector and limiting amplifiers.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.1
• /
• pp.29-34
• /
• 2004

We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.

• Korean Journal of Optics and Photonics
• /
• v.13 no.2
• /
• pp.146-150
• /
• 2002

1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.