• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.2
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• pp.149-155
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• 2023

Photovoltaic power generation is the most familiar power generation facility among new and renewable energies, and its supply began to expand about 10 years ago, and at this point, interest in solutions and technologies for system maintenance management is increasing. In particular, it is necessary to take measures to maximize the overall efficiency of the solar power generation system, whether or not there is an abnormality in the solar power generation system, and when to replace parts. The PV inverter, one element of the photovoltaic power generation system, is a power conversion system that relies on power switching devices, and DC-Link capacitors are used according to the configuration of DC/DC converters and DC-AC inverters. These DC capacitors also affect system safety (Safety) through renewable energy facilities due to the decrease in power generation of PV inverters, power loss, and increase in harmonics (THD, total distortion of AC output current) due to aging and deterioration due to long-term use. factors can be analyzed. Therefore, in this paper, the PV inverter operating characteristics according to the DC capacitor capacity state currently operating in the photovoltaic power generation system were considered, and research contents were proposed to secure the safety and reliability of renewable energy facilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.161-162
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• 2011

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 태양전지 연구가 활발히 진행되고 있다. GaN 물질은 높은 전자 이동도와 높은 포화 속도 등 광전자 소자에 유리한 광, 전기적 특성들을 가지고 있다. 또한, In의 함량을 변화시켜가며, 0.7eV에서 3.4eV까지 밴드갭을 조절함으로써, 자외선부터 적외선까지 태양빛 스펙트럼의 대부분을 흡수할 수 있는 장점이 있다. InGaN 태양전지의 효율을 높이기 위해서는 In의 함량을 늘려 밴드갭을 줄이는 것이 중요하다. 하지만 GaN 와 InN 간의 격자 부정합으로 인해 In 함량이 높은 단결정 InGaN 층을 두껍게 성장 하는 것이 어렵다. 때문에 GaN 기반 태양전지 관련 연구 그룹들이 태양전지의 효율 향상을 위해 활성층에 양자우물(MQWs) 구조, Supper Lattice (SLs) 구조와 같이 얇은 InGaN/GaN 층을 주기적으로 반복하여 적층함으로써 높은 조성의 In을 함유한 상질의 InGaN/GaN 층을 성장하는 연구들을 진행해 왔다. 본 연구에서는, p-i-n 구조와 MQW 구조를 갖는 InGaN 기반 태양전지를 제작하여, 각각의 특성을 분석해 봄으로써, In0.1Ga0.9N 태양전지 활성층의 구조에 따른 장/단점에 대해 논의하였다. 먼저 MOCVD를 이용하여 200 nm의 i-In0.1Ga0.9N 활성층을 갖는 p-i-n 구조와 In0.19Ga0.81N/GaN(3 nm/8 nm) MQWs (8 periods) 구조를 갖는 태양전지 에피를 각각 성장하였고, 그 후 공정을 통해 그림 1과 같이 InGaN 태양전지 소자를 제작하였다. 그 후, 각 태양전지의 전류/전압 곡선과 외부양자효율을 측정하여 그림 2와 같은 결과를 얻었다. p-i-n과 MQW 샘플의 외부양자효율은 각각 ~70%, ~25%로 측정 되었다. MQW 샘플의 외부 양자효율이 높지 않음에도 불구하고 p-i-n 구조에 비해 높은 In 함량을 가지고 있으므로, 더 넓은 파장의 빛을 흡수하여, 높은 단락전류(0.778 mA/cm2)를 보이고 있다. 또한 p-i-n 구조에 비해 높은 개방전압(2.3V)를 가지고 있으므로, MQW 샘플이 약 17% 정도 높은 변환효율(1.4%)를 보이고 있다. 이후 추가적으로 p-i-n 과 MQW 구조의 InGaN 태양전지에 나타나는 Voc와 Jsc의 차이를 Polarization 효과를 비롯한 다양한 측면에서 분석해 보고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.73-77
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• 2020

In this study, phosphor ceramics were fabricated, and optical properties were analyzed for application to nextgeneration automotive laser headlamps by using a spherical YAG : Ce phosphor with a garnet structure synthesized based on the spray drying method. The thickness of phosphor ceramic using spherical YAG : Ce phosphor was obtained with 100 ㎛, 150 ㎛, and 200 ㎛ to investigate the effect of thickness on optical properties such as light conversion efficiency, heat dissipation, luminance and color temperature. The results of this study are expected to play a significant role in the manufacturing process for the fabrication of phosphor ceramic by solving issues such as the high cost and low yield in the conventional liquid method to manufacture YAG : Ce nano fluorescent materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• Membrane Journal
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• v.33 no.5
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• pp.257-268
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• 2023

Membrane capacitive deionization (MCDI) is a variation of the conventional CDI process that can improve desalination efficiency by employing an ion-exchange membrane (IEM) together with a porous carbon electrode. The IEM is a key component that greatly affects the performance of MCDI. In this study, we attempted to derive the optimal fabricating factors for IEMs that can significantly improve the desalination efficiency of MCDI. For this purpose, pore-filled IEMs (PFIEMs) were then fabricated by filling the pores of the PE porous support film with monomers and carrying out in-situ photopolymerization. As a result of the experiment, the prepared PFIEMs showed excellent electrochemical properties that can be applied to various desalination and energy conversion processes. In addition, through the correlation analysis between MCDI performance and membrane characteristic parameters, it was found that controlling the degree of crosslinking of the membranes and maximizing permselectivity within a sufficiently low level of membrane electrical resistance are the most desirable membrane fabricating condition for improving MCDI performance.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.11
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• pp.44-52
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• 1998

In this paper, we proposed a node architecture and cell routing strategies for ATM applications in WDM multihop networks. The proposed node architecture employs the optical delay loop for storing the cell which is failed in out-link contention. This optical delay loop allows the delay of one cell without the electro-optic conversion. Therefore, we can get the advantages of S&F(Store-and-Forward) routing in Deflection-based all-optical networks. To support the ATM applications efficiently. we considered the transmission priority of ATM cell so that high priority cell can be transmitted with lower loss and shorter delay than low priority one. Two kinds of routing strategies are designed for this architecture: Scheme-Ⅰand Scheme-Ⅱ. Scheme-Ⅰapplies S&F routing to high cell and Deflection routing to low cell, i.e., high cells are routed along the shortest path based on S&F routing, but low cells are deflected or lost. Schem-Ⅱ is similar to Scheme-Ⅰexcept that low cells can occupy the optical loop if it is available. This Scheme-Ⅱ increases the utilization of network resources without decreasing the throughput of high cell by reducing the low cell loss rate when traffic load is low. Simulation results show that our routing strategies have better performance than conventional ones under non-uniform traffic as well as uniform traffic.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.45-49
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• 1999

The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Solar Energy
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• v.12 no.2
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• pp.62-78
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• 1992

The solar cells of $ITO_{(n)}/Si_{(p)}$, which are ITO thin films deposited and heated on Si wafer 190[$^{\circ}C$], were fabricated by two source vaccum deposition method, and their electrical properties were investigated. Its maximum output is obtained when the com- position of the thin film consist of indium oxide 91[mole %] and thin oxide 9[mole %]. The cell characteristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min]. Also, we investigated the spectral response with short circuit current of the cells and found that the increasing of the annealing caused the peak shifted to the long wavelength region. And by experiment of the X-ray diffraction, it is shown to grow the grains of the thin film with increasment of annealing temperature. The test results from the $ITO_{(n)}/Si_{(p)}$ solar cell are as follows. short circuit current : Isc= 31 $[mW/cm^2]$ open circuit voltage : Voc= 460[mV] fill factor : FF=0.71 conversion efficiency : ${\eta}$=11[%]. under the solar energy illumination of $100[mW/cm^2]$.