• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.280-286
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• 1996

This paper describes operation mechanism of a novel optical waveguide phase modulator with optical bistability characteristics by self electro-optic effect. The fabricated device structure is an optical waveguide modulator, using a refractive index change by an applied electric field, parallel integrated with SEED with an electrical bistability. GaAs/AlGaAs MQW is used as the core layer of the waveguide modulator and the absorption layer of SEED. The absorbed optical power in SEED changes the diode voltage and controls the optical power propagating through the waveguide phase modulator. Optical bistability of waveguide phase modulator is experimentally obtained by using electrical bistability of SEED. Compared to other waveguide modulators, the proposed one has an asset that the lowest optical power is required to generate optical bistability.

• The Magazine of the IEIE
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• v.25 no.6
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• pp.34-41
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.185-189
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• 1991

GaAs Schottky 접촉 전송선을 전극으로 하는 진행파형 광변조기의 특성이 분석되었다. 초고주파의 전파특성은 quasi-TEM 모델에 의해 분석되었으며, 고유치 방법과 유효 굴절율법을 결합하여 광파의 전파특성을 분석하였다. 또한 이를 통해 Schottky 접촉 전송선 및 광도파로의 기하학적 변수에 따라 진행파형 광변조기의 성능지수를 계산함으로써 최적 설계조건을 계산하였다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1131-1133
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• 1999

본 연구에서는 $LiNbO_3$ 변조기에 사용되는 진행파형 coplanar-waveguide 형 전극을 제작하였다. 전극 전극두께를 변화시켜 전극을 제작하여 마이크로파 유효굴절율을 조사하였다. $LiNbO_3$ 광변조기 도파로의 유효굴절율과 정합되는 조건인유효굴절율 2.2에 근접합을 알 수 있었다. 또한 진행파형 전극의 반사손실$(S_{11})$, 삽입 손실($S_{21}$) 등을 측정하여 광변조기에 적용할 수 있는 최적조건에 관하여 논의하였다.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.202-203
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• 2001

21세기 고도 정보화 사회는 실감형 3차원 입체 멀티미디어 서비스로 발전할 것으로 전망됨에 따라 3차원 입체 영상 디스플레이 기술에 대한 관심이 높아져서 국내외적으로 기술개발이 활발하게 진행되고 있다. 최근 3차원 영상 디스플레이 시스템을 구현하기 위해 입력이미지는 공간광변조기에 의해 디스플레이 되는데, 이때 사용될 수 있는 공간광변조기는 LCD, DMD,(deformable mirror device), MOD(magento optic device)등이 있다. (중략)

• Journal of Sensor Science and Technology
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• v.8 no.4
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• pp.333-340
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• 1999

A reflective interference type optical modulator to compose the electric field sensor is proposed, and the performance and characteristics are theoretically analyzed. For the high sensitivity of the sensor, a method to improve the modulation index of the modulator is presented. The electric field sensor using $Ti:LiNbO_3$ waveguide was fabricated and qualitatively investigated the characteristics by measuring the low frequency electric field. Even though the sensor showed very low modulation index of 5%, the electric filed strength of 5 V/cm was measured. The experimental results revealed the utilities of this type electric field sensor.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.22-23
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• 2000

GaAs/AlGaAs나 InGaAs/InGaAsP와 같은 반도체 기판을 이용한 전계광학 광변조기는 LD나 SOA와 같은 광소자와 단일기판 집적이 가능하고 낮은 chirping과 높은 변조대역폭을 갖는 외부광변조기로서의 장점으로 인하여 마이크로파 대역의 초고속광통신소자로 각광을 받아왔다. 특히 진행파의 속도가 정합된 traveling-wave 전극 구조를 갖는 경우 변조대역폭은 30-400Hz에 달하고 있다$^{(1)}$ . 그러나 한편으로는 반도체의 전계광학계수(electro-Optic Coefficient)가 LiNbO$_3$에 비해 10분의 1정도로 작아 상대적으로 동작전압이 커지는 단점이 대두되며 실제 구동전압이 수십 V에 이르고 있다. 이런 단점을 극복하기 위하여 p-i-n 구조를 이용하여 전계 집속도를 높이는 방법이 제안되어 동작전압이 2 V/mm 정도까지 감소하였다$^{(2)}$ . 본 논문에서는 이와 같은 반도체 전계광학 광변조기에서의 소신호 및 대신호 광변조특성을 분석함으로써 보다 높은 변조대역폭과 보다 낮은 동작전압을 갖는 구조를 연구하였다. (중략)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.85-91
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• 1999

$H:LiNbO_3$ optical modulator with Cu/parylene electrode layer, which has a merits in the bandwidth, power consumption and fabrication conditions as compared with conventional Au/Cr/$SiO_2$, is proposed and fabricated. Analysis and design of optical modulator is performed by finite element calculation. Various unit processes for fabricating the proposed modulator, 1550nm $H:LiNbO_3$ optical waveguide, parylene buffer layer, and CPW Cu electrode, were developed, After dicing and end-face polishing of fabricated modulator chip, optical modulation responses as sawtooth electrical driving voltage has been measured at low frequencies. Properties of optical waveguide had not been changed before and after Cu/parylene electrode processes, which make confirm the reproducible fabrication of optical modulator.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.91-97
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• 1998

The modulation performance of 10 Gbps electro-absorption InGaAsP/InGaAsP strain compensated MQW (Multiple Quantum Well) modulator module depends on the modulator as well as the package parasitics. The high frequency package parasitics resulting from various structural discontinuities, limit the modulation bandwidth and increase the chirp-parameter. Therefore, we propose the double bondwires embedded in dielectric materials to minimize the bondwire parasitics. Using the proposed structure with 50 $\Omega$ terminating resistor, the modulation bandwidth is greatly increased by 125 % than the bare chip and the chirp-parameter is also reduced. This technique can be used in optimizing the package of high speed external modulators.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.5
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• pp.956-966
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• 1997

Dynamic free-space optical interconnection system is experimented by a holographic crossbar with single-state switching architecture. For dynamic operation, electrically addressed liquid-crystal spatial light modulator and diffraction gratings are used in place of passive holograms of matrix-matrix crossbar. Diffraction gratings are consisted of regular cells which have different phase delays. This pixelated phase grating array displayed on SLM(Spatial Light modulator) deflects an input beam toward a wanted direction or splits an input beam into many beams and then steers them to desired positions. Through the experimental results, free-space optical interconnection is dynamically perfomed using a computer, SLM and phase diffraction gratings.