• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1293-1294
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• 2007

태양전지는 대표적인 결정질 실리콘 태양전지를 비롯해 다양한 종류가 있지만 모두 입사광의 광량이나 광도에 출력이 의존한다는 점은 공통적이다. 이는 입사광의 에너지를 받아 염료 분자의 여기를 통해 전자를 생산하는 염료감응형 태양전지의 매커니즘에도 적용되는 것이다. 즉, 입사광의 광도나 광량의 값이 클수록 염료감응형 태양전지는 더 높은 출력전력을 생산한다는 의미이다. 본 연구에서는 투명성 때문에 입사광의 투과도가 높은 염료감응형 태양전지의 특성에 착안해 상대전극에 금속박막을 sputtering함으로써 입사광의 반사율을 증가시켜 입사된 광의 에너지를 더 효과적으로 활용할 수 있는 방법을 시도했다. 금속박막의 재료로 니켈, 백금, 은을 대상으로 실험한 결과, 금속박막을 sputtering 하지 않은 경우에 비해 전체적으로 염료감응형 태양전지의 효율이나 전력면에서 개선된 결과를 얻었고 그 중 백금 반사막을 입힌 셀로부터 최대 24.4%의 투과도 감소를 비롯, 11.5%의 출력전력의 증가와 0.4%의 효율 상승을 이끌어냈다.

• Journal of Bio-Environment Control
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• v.21 no.1
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• pp.66-73
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• 2012

This study was conducted to develope new indoor plants and to investigate the effects of light intensity on the growth of $Distylium$ $racemosum$, $Osmanthus$ $heterophyllus$ and $Damnacanthus$ $indicus$ under 100 lux, 1,000 lux and 2,500 lux fluorescent lighting for six months in the environment-controlled growth chambers. 1. $Distylium$ $racemosum$ : Most of $Distylium$ $racemosum$ under 100 lux light intensity were blighted in two months, whereas it was 100% of survival under 1,000 lux and 2,500 lux after six months. Plant height, number of leaf, leaf width and leaf length became higher as light intensity increased. The plants maintained under 2,500 lux showed the greatest plant height and leaf number. 2. $Osmanthus$ $heterophyllus$ : $Osmanthus$ $heterophyllus$ under 100 lux light intensity were blighted in two months, whereas it was 100% of survival under 1,000 lux and 2,500 lux after six months. However, under 1,000 lux, it paused plant height and was not increased in leaf number any more. A plant growth status showed the highest value under 2,500 lux in all conditions. 3. $Damnacanthus$ $indicus$ : $Damnacanthus$ $indicus$ was defoliated and blighted under 100 lux light intensity in two months, whereas it was grown properly with 1,000 lux or above. However, the growth under 2,500 lux of $Damnacanthus$ $indicus$ was superior to other treatments. But, $Damnacanthus$ $indicus$ under 1,000 lux after 6 months was more favorable chlorophyll contents, leaf length and leaf width than 2,500 lux. As increasing slightly of chlorophyll contents and leaf growth under 1,000 lux, $Damnacanthus$ $indicus$ could be utilized highly to the indoor ornamental plant.

• Journal of Korean Society of Forest Science
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• v.89 no.5
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• pp.591-597
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• 2000

This studies were carried out to investigate the optimum shading for seedling cultivation of Cornus controversa and C. walteri. The experiment was performed under five different shading scheme such as 100%, 50%, 30%, 10%, and 2% of the natural full sun light intensity for 7 months in the field condition. Two species showed the highest height growth under 50% of relative light intensity, and the highest diameter growth at root collar was observed both under 100% and 50% of relative light intensity. C. controversa seedlings grown under 50% of relative light intensity produced more total biomass than control seedlings, but root biomass was less in the seedlings under 50% of relative light intensity. In case of C. walteri, total biomass production of the seedlings under 50% of relative light intensity was lower than that of the seedlings under full sun light intensity, but leaves and shoot biomass was slightly high under 50% of relative light intensity. Great reductions of height growth and diameter growth at root collar, and biomass production were observed below 30% of relative light intensity in the both species. T/R ratio of the two species was highest under 30% of relative light intensity, and the chlorophyll content of the seedlings tended to be increased by reduction of relative light intensity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.17-23
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• 2008

We have investigated the properties of the novel rectangular ring lasers containing active and passive regions in a InP material system. The rectangular ring laser consists of four low loss total internal reflection mirrors and a directional coupler made out of passive three waveguide. Two different lasers haying active lengths of 250 and $350{\mu}m$ and total cavity lengths of 580 and $780{\mu}m$ are fabricated, respectively. For both devices lasing thresholds of 38 mA is obtained at room temperature and under continuous wave operation. Lasing is predominantly single mode with the side mode suppression ratio better than 20 dB.

• Journal of Korean Society of Forest Science
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• v.76 no.3
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• pp.218-229
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• 1987

This study was carried out to investigate all the parts' weight growth under the different light intensity and root-cutting. As results : ${\cdot}$ Fresh and dry weight of leaf, shoot, root and seedling treated under 63% R.L.I showed the largest growth. ${\cdot}$ The largest growth in fresh and dry weight of shoot arid seedling appeared at 1/4 root cutting plot. ${\cdot}$ The value of T/R ratio was increased in low light intensity and high root-cutting. ${\cdot}$ The simple nonlinear relationship between light intensity, root-cutting and T/R ratio was recognized, respectively.

• Korean Journal of Plant Tissue Culture
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• v.27 no.1
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• pp.25-29
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• 2000

Liquid shaking culture was conducted to investigate the proper culture conditions for the micropropagation of high quality lily using bulblets (3 mm in diameter) obtained from small scale culture. The combinations of 9% sucrose and 10 mM nitrogen or 6% sucrose and 20 mM $NH_4NO_3$ were effective on the growth and weight of micro-bulbs. However, the number of new bulbs was the highest when 20 to 40 mM $NH_4NO_3$ and 3% sucrose were added to the MS medium. The total fresh weight was increased effectively in MS medium supplemented with BA 0.2 mg/L alone under $60\;{\mu}mol{\cdot}m^2{\cdot}sec^{-1}$ intensity. Also bulblet weight was increased at $60\;{\mu}mol{\cdot}m^2{\cdot}sec^{-1}$ intensity, regardless of BA concentrations (0.2 and 2 mg/L) in the medium. The proper culture period of bulblet was about 2 month in liquid shaking culture.

• Korean Journal of Medicinal Crop Science
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• v.14 no.4
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• pp.239-243
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• 2006

Orostachys japonicus, a monocarpic plant, is artificially grown in greenhouses. The study was carried out to examine the effect of shading (0, 35, 55, 75, 95%) on growth, morphological characters, and flowering. The treatments were done on August 25 and afterward samples were taken every 2 weeks until October 20, in which growth, morphological and flowering related characters were measured. With severer shading plant height, inflorescence length, number of leaves including bracts and stem diameter were decreased although severely declined in 95% shading treatment. Leaves and bracts, stem, root, shoot and total dry weights increasingly declined with severer shading. Florets formed on the inflorescence showed similar response to the shading treatment as plant height did. Flowering of the florets was not observed throughout all the sampling period, meaning that different light intensities by shading did not affect their flowering.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.366-366
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• 2012

현재 사용되고 있는 투명전극재료 중에 ITO(Indium Tin Oxide)가 가장 투명하면서 전기도 잘 통하고 생산성도 좋다. 투명전극은 비저항이 $1{\times}10^{-3}{\Omega}/cm$이하, 면 저항이 $10^3{\Omega}/sq$이하로 전기전도성이 우수하고 380에서 780 nm의 가시광선 영역에서의 투과율이 80%이상이라는 두 가지 성질을 만족시키는 박막이다. 본 연구에서 X-ray Film을 제작하기 위하여 상용화된 ITO Glass 전극 기판에 X-ray가 조사되면 직접 전자 전공 쌍(electron-hole pair)을 발생시켜 전기적 신호를 발생하는 광도전체 물질(Photoconductor)인 PbO, $PbI_2$, $HgI_2$를 스크린 프린팅(Screen Printing)법을 이용하여 각각 제작하였다. 상부 전극으로 마그네틱 스퍼터링(Magnetic Sputtering) 진공 증착 장치를 사용하여 전류, 전압, 아르곤 및 산소 유입량등을 조절하면서 상부 전극을 증착하였다. 이때 타켓으로 $In_2O_3;SnO_2$ (조성비:90:10wt%)를 사용 하였고, base pressure는 $9{\times}10^{-7}torr$, deposition pressure는 $3{\times}10^5torr$를 고정하였다. 또한 전류와 전압은 각각 0.4A, 800V로 유지하고, $O_2$:0.3 ppm, Ar의 경우 4.9 ppm에서 70 ppm까지 올려 플라즈마를 활성화 시킨 후 90초 동안 ITO를 증착하였다. 본 실험에 제작된 박막으로 X-ray을 조사하여 검출기로써 특성 평가를 실시하였으며, 실험결과 X-선 투과와 전도성 등 두가지 특성이 동시에 만족 될 만한 성능을 가질 수 있음을 확인 할 수 있었다.

• Journal of Biomedical Engineering Research
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• v.23 no.4
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• pp.263-268
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• 2002

The image quality of imageguide depends on the structure, material, length of microfibers and the phenomena such as cross-talk and leaky ray between adjacent fibers. These Parameters should be considered as important factors in the image transmission qualify of fibers. However it is considered to be very difficult to assess all the parameters in a consistent way Therefore. two image characteristics, image resolution and image brightness are measured and analyzed to determine the image quality of imageguide. But the exact methods to measure two image characteristics of imageguide are not reported. In this study, the image brightness of imageguide for ultrathin endoscope is determined by measuring of the numerical aperture. the packing fraction and the attenuated power ratio of imageguide. Especially it is possible to obtain more exact results from measuring the numerical aperture of whole image guide than those from theoretical calculation of the single microfiber in an image guide. The image brightness of the image guide which has $3.1\mu m$ microfibers is about 37% less than that with $4.1\mu m$ microfibers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.