• Title/Summary/Keyword: 고 종횡비 Nickel Stamper

Search Result 2, Processing Time 0.017 seconds

Fabrication of High Aspect Ratio 100nm-Scale Nickel Stamper Using E-Beam Writing based on Chrome/Quartz Mask Without Anti-Reflection Layer for Injection Molding of Optical Grating Patterns (광학 그레이팅의 사출성형제작을 위한 전자빔과 무반사 코팅층이 없는 크롬/퀄츠 마스크를 이용한 고종횡비 100nm 급 니켈 스탬퍼의 제작)

  • Seo, Young-Ho;Choi, Doo-Sun;Lee, Joon-Hyoung;Je, Tae-Jin;Whang, Kyung-Hyun
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.28 no.11
    • /
    • pp.1794-1798
    • /
    • 2004
  • We present a fabrication method of high aspect ratio 100nm-scale nickel stamper using e-beam writing for the injection molding of optical grating patterns. Conventional nickel stamper is fabricated by nickel electroplating process which is followed by seed layer deposition. In this paper, we have used chrome coated blank mask without anti-reflection layer of CrON in order to simplified electroplating process. In experimental study, we have optimized electron-beam dosage for 100nm-scale optical grating patterns with 2.5-aspect ratio, and fabricated nickel stamper using above grating patterns as PR mold. Fabricated nickel stamper have showed height of 240$\pm$20nm and width of 116$\pm$6nm.

Fabrication of High Aspect Ratio 100nm-scale Nickel Stamper Using E-beam Lithography for the Injection molding of Nano Grating Patterns (전자빔과 무반사층이 없는 크롬 마스크를 이용한 나노그레이팅 사출성형용 고종횡비 100nm 급 니켈 스템퍼의 제작)

  • Seo, Young-Ho;Choi, Doo-Sun;Lee, Joon-Hyoung;Je, Tae-Jin;Whang, Kyung-Hyun
    • Proceedings of the KSME Conference
    • /
    • 2004.04a
    • /
    • pp.978-982
    • /
    • 2004
  • We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

  • PDF