• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.8
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• pp.781-790
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• 2013

Nowadays, national critical infrastructures have been known to be highly vulnerable to the EMP threats which are internationally growing. But their realistic solutions have been not made by the lack of detailed rules and regulations in current laws, however, which cover most of cyber threats. This paper takes a look at the domestic and overseas trends on the EMP protections, and proposes the revision directives of relevant laws and the contents included into the proposed legislation. Among them, the amendment of the current "Information Infrastructure Protection Act" is considered to be the most effective, including provisions on protected informations, industrial promotions, R&D supports, education, etc. Anyway, this paper is expected to be helpful for introducing an effective legal scheme on the CIP against EMP threats. domestic rule.

• Journal of IKEEE
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• v.19 no.3
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• pp.440-446
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• 2015

This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.7
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• pp.757-766
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• 2014

In this paper, economic loss due to high power electromagnetic pulse is estimated and the methodology used for calculating its impacts is suggested using a macro approach. In order to investigate the most critical infrastructure for the high power electromagnetic pulse assault, the vulnerability assessment that provides information on the threats of concern is conducted. As a result, this study concentrates on the electric power networks. The presented assessment model is considered with gross domestic product (GDP) and energy consumption when the electric power networks are damaged due to high power electromagnetic pulse. In addition, economic losses are calculated by the extent of damages considering different types of the high power electromagnetic pulse assault generated by nuclear and man-made weapon. Through the estimation of these damages, the resulted economic loss will be compared with the protection cost. Consequently, protection of the vulnerable infrastructures can be prepared against electromagnetic pulse attack.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1073-1084
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• 2010

In this paper, the bio-heat equation including thermoregulatory functions is solved for an anatomically based human head model comprised of 14 tissues to study the thermal implications of high-power exposure to electromagnetic(EM) fields due to half-wave dipole antenna both at 835 and 1,800 MHz. The dipole antenna is located at the side of the ear and the front of the eyes. The FDTD method has been used for the SAR computation. When solving the BHE, the thermoregulation function and sweating effetecs are included in order to predict more exact temperature increase. It is noted that an approximately proportional relationship between the tissues and the maximum temperature increase and the antenna power is not maintained when the thermoregulation and sweating effects are fully accounted for under high power exposure.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.3-14
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• 2014

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.3-15
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• 2012

• The Magazine of the IEIE
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• v.41 no.7
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• pp.82-87
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• 2014

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.3
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• pp.3-10
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• 2017

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.6
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• pp.148-155
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• 2008

We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.