• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.305-309
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• 1993

Thermal stability of Co/Cu artificial superlattice (AS) prepared by RF-magnetron sputtering and the effect of low temperature annealing on the magnetoresistance of the AS have been investigated in this work. Dependence of annealing behavior on the Cu spacer thickness, Fe underlayer thickness, and kind of the underlayer was examined and the relationship between the interfacial reaction and magnetoresistance was studied. It turned out that when Co/Cu AS was annealed at low temperature ($<450^{\circ}C$), the magnetoresistance could increase in the case of AS with thick spacer Cu ($20~25\AA$) layer, whereas it decreased in the case of AS with thin spacer Cu ($7\AA$) layer, which of the former is in contrast with previous reports and the latter in consistent with them. The increase of magnetoresistance is due to increase of interfacial atomic sharpness, which is supported by low angle X-ray diffraction analysis. The thermal stability of Co/Cu AS was better in the case of thick Fe underlayered AS. Interfacial reaction (separation of intermixed Co and Cu) could be observed at lower temperature for (200)-textured samples than for (111)-textured samples, which can be interpreted in terms of interdiffusion kinetics depending on the crystallographic orientation.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.47-52
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• 2024

The effects of annealing temperature on the optical and electrical properties of BZO thin films, grown on glass substrate, have been investigated. Analysis of the XRD shows that regardless of the annealing temperature, all BZO thin films indicate the c-axis orientation. The full width of half maximum (FWHM) decreases from 1.65 to 1.07° as the annealing temperature increases from 400 to 600℃. The average transmittance in the visible light region showed a high value of 85% without significantly affecting the annealing temperature. The results of Hall effect measurements indicate that the carrier concentration and mobility increased and the resistivity decreased as the annealing temperature increased. The resistivity and the carrier concentration of the BZO thin films annealed 600℃ were 9.75×10^-2 Ω·cm and 4.21×10¹⁹ cm^-3 respectively, showing the best value. The optimization of deposition and annealing conditions will certainly make the BZO thin films promising materials for the application to the next generation of optoelectronic devices.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.42-43
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• 2009

본 연구에서는 고주파 마그네트론 스퍼터링방법을 사용하여 ITO박막을 대체할 수 있는 새로운 TCO박막으로서 $TiO_2$가 도핑된 ZnO(TZO) 박막을 성막하였다. 이때, $TiO_2$의 도핑량을 1wt.%에서 5wt.%까지 변화를 주었으며 제작된 TZO 박막에 대해서 전기적 특성과 광학적 특성들의 조성비와 박막두께의 할수로서 조사하였다. 그 결과, $TiO_2$가 2wt.% 도핑된 박막에서 가장 낮은 $1\times10^{-3}\Omega{\cdot}cm$의 비저항이 얻어졌으며, $TiO_2$의 도핑량이 증가함에 따라 비저항은 점점 증가하는 것으로 나타났다. 이와같은 비저항의 변화는 $TiO_2$도핑량이 다른 TZO박막의 홀이동도(Hall mobility)에 비례하며, 이동도는 결국 TZO박막을 형성하고 있는 결정립의 크기에 의존하는 것이 X선 회절 패턴으로부터 확인되었다. XRD 패턴에서 ZnO(002) 방향의 결정성이 가장 큰 것으로 나타났으며, 도핑량이 증가할수록(002)피크의 크기가 점점 감소하는 것을 볼 수 있다. 이는 결정성의 크기가 2wt.%일 때 가장 크며 도핑량이 증가할수록 결정성의 크기가 감소하는 것으로 나타났다. 결정립의 크기변화는 TZO박막의 전기적 이동도에 영향을 주는 것으로 나타난다. 즉, 2wt.%일 때 이동도가 가장 크며 도핑량이 증가할수록, 이동도가 감소하였으며 이결과는 TZO박막의 Hall effect 측정으로부터 확인된다. 따라서, $TiO_2$도핑량에 따른 TZO 박막의 비저항을 도핑량이 2wt.%일 때 가장 낮으며 이는 TZO 박막의 결정성이 가장 우수하였으며 그결과 이동도가 증가했기 때문인 것으로 확인되었다.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.887-892
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• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.497-504
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• 2019

We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1095-1100
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• 2021

In this study, ITZO thin films were deposited on glass, sapphire, and PEN substrates by RF magnetron sputtering, and their electrical and optical properties were investigated. The resistivity of the ITZO thin film deposited on the glass and sapphire substrates was 3.08×10-4 and 3.21×10-4 Ω-cm, respectively, showing no significant difference, whereas the resistivity of the ITZO thin film deposited on the PEN substrate was 7.36×10-4 Ω-cm, which was a rather large value. Regardless of the type of substrate, there was no significant difference in the average transmittance of the ITZO thin film. Figure of Merits of the ITZO thin film deposited on the glass substrate obtained using the average transmittance in the absorption region of the amorphous silicon thin film solar cell and the absorption region of the P3HT : PCBM organic active layer were 10.52 and 9.28×10-3 Ω-1, respectively, which showed the best values. Through XRD and AFM measurements, it was confirmed that all ITZO thin films exhibited an amorphous structure and had no defects such as pinholes or cracks, regardless of the substrate type.