• Journal of Sensor Science and Technology
• /
• v.3 no.2
• /
• pp.65-73
• /
• 1994

TO:F($SnO_{2}:F$) thin films were prepared by RF magnetron sputtering system. The dependence of their structural, electrical, and optical properties on deposition conditions such as substrate temperature, working pressure and power was studied. The optimum conditions of TO:F thin film are $SnF_{2}$ content of 15wt.% in target, RF power of 150W, substrate temperature of $150^{\circ}C$ and working pressure of 2mmTr. The resistivity and transmittance at 550nm in visible spectrum of the TO:F film deposited at optimum condition are $9{\times}10^{-4}{\Omega}{\cdot}cm$ and above 85%, respectively. For the films deposited from the target without $SnF_{2}$ and with 15wt.% $SnF_{2}$, the optical bandgaps calculated from the transmittance curves are 3.84 and 3.9eV, respectively. X-ray diffraction patterns showed that TO and TO:F films had tetragonal rutile structure with (101), (200) direction.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.294-294
• /
• 2015

대향타겟식 스퍼터링법을 이용해 유연한 기판에 증착시켜 고주파 마그네트론 스퍼터링보다 덜 손상이 입히도록 증착 시켰으며, 플라즈마 주파수를 다양하게 하여 밴딩테스트 후 나빠지는 전기적, 광학적 특성을 개선하고, 그 원인을 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.269-269
• /
• 2010

고주파 마그네트론 동시 스퍼터링법을 이용하여 $TiO_2$ 박막에 탄소를 도핑한 C/$TiO_2$ 박막을 제작하고, 박막의 두께와 탄소 도핑량에 따른 물리적, 광학적 특성을 조사하였다. 스테인레스강을 기판으로 사용하였으며, $TiO_2$ 박막과 기판의 열팽창계수 차이에 의한 크랙을 방지하기 위하여 Ti 박막을 DC 마그네트론 스퍼터링 장치를 이용하여 기판위에 증착시킨 후 실험을 진행하였다. EMP(Essential Macleod Program) 시뮬레이션을 이용하여 막의 층상구조, 두께, 물질변화를 통한 다양한 색상의 칼라를 구현하고 투과율, 반사율 등을 포함한 다양한 광학 특성을 사전 예측하였다. 제작된 박막은 투께 및 밀도에 따라 다양한 색상을 구현하였으며, 박막내의 흡수와 산란효과에 의해 굴절률이 감소하였다. 또한 순수 $TiO_2$ 박막보다 접합력 및 경도가 증가함을 알 수 있었다.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.727-732
• /
• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• Journal of the Korean Ceramic Society
• /
• v.40 no.3
• /
• pp.262-267
• /
• 2003

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.8
• /
• pp.1873-1878
• /
• 2013

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.

• Journal of the Korean Ceramic Society
• /
• v.40 no.6
• /
• pp.547-552
• /
• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Journal of the Korean Magnetics Society
• /
• v.3 no.4
• /
• pp.289-292
• /
• 1993

[Ni/Fe/Cu] and [Fe/Ni/Fe/Cu] multilayers were prepared with three gun rf-magnetron sputtering, and dependence of magnetoresistance on the Ni IFe thickness ratio was investigated. Vaccum annealing was tried to invetigated the effect of annealing. Oscillation of magnetoresistance on the Cu spacer thickness was dbserved in these two kinds of multilayers. When the thickness of Fe inserted into the Ni/Cu interface was about $3\;\AA$. the maximum value of magnetoresistance(13 %) could be observed. In a sample of $1~2\;\AA$ Fe thickness, saturation field decreased significantly, while magnetoresistace decreased slightly in comparison with the sample of $3\;\AA$ Fe. In ${[Cu(23\;\AA)/Fe(1\;\AA)/Ni(18\;\AA)/Fe(1\;\AA)]}_{20}/Fe(80\;\AA)/Si$, 6 % magnetoresistance with 100 Oe saturation field could be obtained. No appreciable change in magnetoresistance and saturation field could be observed by low temperature annealing. Formation of Ni-Fe alloy was not confinred.

• Korean Journal of Optics and Photonics
• /
• v.16 no.2
• /
• pp.168-173
• /
• 2005

Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.

• Proceedings of the Korean Society of Marine Engineers Conference
• /
• 2005.11a
• /
• pp.192-193
• /
• 2005

Magnesium thin films were prepared on cold-rolled steel substrates by RF(Radio Frequency) magnetron sputtering technique.$^{1)}$ The crystal orientation and monitoring of the deposited films were investigated by using XRD(X-ray Diffraction) and EIS(Electrochemical Impedance Spectroscopy), respectively. The corrosion rates of Mg thin films deposited with different argon gas pressure and substrate bias voltage were monitored by AC impedance method under a cyclic wet-dry condition, which was conducted by exposure to alternate conditions of 1h immersion in 3%NaCl solution and 5h drying at 60% RH and 25$^{\circ}C$. The result of corrosion rate of Mg thin films deposited at various Ar gas pressures and substrate bias voltage under wet-dry cyclic exposure in chloride-containing solutions was showed the following conclusions. At the region I during the onset of the wet cycle, corrosion rate showed relatively low value. The increase in the Corrosion rate of region II is due to the increase in the chloride concentration. Corrosion rate of region III during the onset of the cycle zero and salt crystals remain on the metal surface.$^{2)}$