• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• Journal of the Korean Magnetics Society
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• v.24 no.2
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• pp.56-59
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• 2014

The samples of $Ba_2CoZnFe_{12}O_{22}$ was synthesized by the solid-state reaction method. The toroids of $Ba_2CoZnFe_{12}O_{22}$ were sintered with various sintering temperature at 1050, 1100, 1150, and $1200^{\circ}C$, and studied by x-ray diffractometer, vibrating sample magnetometer, network analyzer, and Mssbauer spectrometer. From the XRD patterns, the density of samples increased with increasing sintering temperature. From the magnetic hysteresis curves up to 10 kOe at 295 K, the saturation magnetization ($M_s$) of $Ba_2CoZnFe_{12}O_{22}$ samples in various sintered at 1050, 1100, 1150 ,and $1200^{\circ}C$ were showed around $M_s$= 33.0 emu/g. However, With increasing sintering temperature, the coercivity ($H_c$) of samples decrease. Complex permeability and permittivity of samples in various sintering temperatures were measured between 100MHz to 4 GHz. With increasing sintering temperature, the permeability of samples increase.

• Journal of Aerospace System Engineering
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• v.17 no.1
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• pp.42-50
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• 2023

In this study, hexagonal ferrite powder with chemical formula SrZn_2-xCo_xFe₁₆O₂₇ was synthesized by a solid-state reaction method and its electromagnetic (EM) wave absorption characteristics were evaluated in the frequency range of 0.1-18 GHz with absorber thickness range of 0 - 10 mm. Reflection loss (RL) affecting electromagnetic wave absorption performance was calculated based on the transmission line theory using measured complex permeabilities and permittivities. RL spectra were also directly measured for some samples. They were well matched with calculated results. High-frequency complex permeability characteristics were changed gradually according to the amount of Co substitution (x). The EM wave absorption frequency band could be tuned accordingly. Hexaferrite samples with x = 1.0, 1.25, and 1.5 exhibited remarkable maximum electromagnetic wave absorption performances with minimum RL (RL_min) lowered than -50 dB. They also showed a very broad frequency band (Δf > 10 GHz) in which more than 90% of the EM wave energy absorption occurred (RL ≤ -10 dB).

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.13-17
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• 2003

In this study, new LTCC materials of $ZnWO_4$-LiF system were developed for the application to RF Module fabrication. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. The measured dielectric constant ($\epsilon_r$)quality factor ($Q{\times}f0$), and temperature coefficient of resonant frequency ($\tau_f$ were 15.5, 74000 GHz, and $-70ppm^{\circ}C$, respectively. LiF addition resulted in a liquid phase formation at 81$0^{\circ}C$ due to interaction between ZnWO$_4$ and LiF. Therefore, ZnWO$_4$ with 0.5∼1.5 wt% LiF could be densified at $850^{\circ}C$. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2∼15 due to lower dielectric constant of LiF. Qxfo value decreased with increasing LiF content. This can be explained in terms of the interaction between LiF and $ZnWO_4$, and inhomogeneity of grain structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Polymer(Korea)
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• v.36 no.4
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• pp.413-419
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• 2012

Multi-functional urethane acrylate monomers as the curing agent of poly(phenylene ether) (PPE) were synthesized and then the urethane bond formation was checked by FTIR spectrometry and NMR analysis. The synthesized monomers were mixed with PPE and fabricated to dielectric substrates. After forming PPE/monomer composite sheets by a film coater, several sheets were laminated to a test substrate in a vacuum laminator and then its properties depending on the type and the amount of monomers, such as dielectric constant, dielectric loss, and peel strength, were measured. Between the two different hydroxyl acrylates, when the monomer synthesized with 2-hydroxy-3-phenoxypropyl acrylate containing a phenyl group was used as a curing agent, a smaller dielectric loss was obtained and the dielectric constant and loss decreased with a decrease in the amount of the monomer. The peel strength values of the test substrates, however, did not show any specific difference between the cases of two synthesized monomers. As a result, it was obtained the polymer substrate for high frequency application having peel strength of about 10 N, low dielectric constant of 2.54, and low dielectric loss of 0.0027 at 1 GHz.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.646-649
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• 2002

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.17-23
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• 1992

A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.